Nanosized Vertical Organic Spin-Valves

R. Göckeritz,N. Homonnay,A. Müller,T. Richter,B. Fuhrmann,G. Schmidt

DOI: https://doi.org/10.1063/1.4914830

2015-02-23

Abstract:A fabrication process for vertical organic spin-valve devices has been developed which offers the possibility to achieve active device areas of less than 500x500 nm^2 and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large-area spin-valves indicates that the magnetoresistance of both, large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to understand the origin of the magnetoresistance (MR) effect in vertical organic spin - valves (OSVs). Specifically, the authors focus on:

1. **Source of the magnetoresistance effect**: In OSVs, whether the magnetoresistance effect is mainly caused by the spin - polarized charge transfer through the organic spacer layer or by the tunneling process (such as through pinholes). This is an as - yet - unclear issue, especially in nano - sized devices.

2. **Differences in magnetoresistance behavior of devices of different sizes**: There are significant differences in the magnetoresistance characteristics of large - sized and small - sized OSVs. Large - sized devices exhibit large magnetoresistance changes (sometimes exceeding 100%), but there are also large variations among devices. The magnetoresistance behavior of nano - sized devices is more complex and may be affected by individual pinholes.

3. **Preparation process of nano - sized OSVs**: In order to study the above problems, it is necessary to develop a process capable of fabricating OSVs with sub - micron or even nano - scale active regions while avoiding damage to the organic materials. Existing preparation methods encounter many challenges when reducing device size, such as the organic materials being sensitive to solvents and easily damaged.

### Main contributions of the paper

- **Developed a new preparation process**: This process can reduce the active region of OSVs to the nano - level without damaging the organic materials. By using oxide windows as lateral confinement, lithography or electron - beam lithography is avoided directly on the organic layer, thus protecting the organic materials.

- **Revealed the magnetoresistance mechanism in nano - sized OSVs**: Research shows that in nano - sized OSVs, the magnetoresistance effect is mainly dominated by the tunneling process through pinholes, rather than by the spin - polarized transfer of the entire organic layer. The existence of pinholes and their statistical distribution explain the large differences and sign changes in magnetoresistance among different devices.

### Formula summary

- **Relative magnetoresistance formula**:
\[
\text{MR}=\frac{R_{AP}-R_P}{R_P}
\]
where \(R_{AP}\) is the resistance in the antiparallel arrangement and \(R_P\) is the resistance in the parallel arrangement.

- **Total resistance contributed by pinholes**:
\[
R_{\text{total}}=\frac{1}{\sum_i\frac{1}{R_i}}
\]
where \(R_i\) is the resistance of each pinhole.

Through these studies, the authors provide important experimental evidence for in - depth understanding of the working principle of OSVs and lay the foundation for the future development of high - performance, low - cost non - volatile electronic devices.