Abstract:Over the past two decades, prototype devices for future classical and quantum computing technologies have been fabricated by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these successes, phosphine remains the only donor precursor molecule to have been demonstrated as compatible with the hydrogen resist lithography technique. The potential benefits of atomic-scale placement of alternative dopant species have, until now, remained unexplored. In this work, we demonstrate the successful fabrication of atomic-scale structures of arsenic-in-silicon. Using a scanning tunneling microscope tip, we pattern a monolayer hydrogen mask to selectively place arsenic atoms on the Si(001) surface using arsine as the precursor molecule. We fully elucidate the surface chemistry and reaction pathways of arsine on Si(001), revealing significant differences to phosphine. We explain how these differences result in enhanced surface immobilization and in-plane confinement of arsenic compared to phosphorus, and a dose-rate independent arsenic saturation density of 0.24 ± 0.04 monolayers. We demonstrate the successful encapsulation of arsenic delta-layers using silicon molecular beam epitaxy, and find electrical characteristics that are competitive with equivalent structures fabricated with phosphorus. Arsenic delta-layers are also found to offer confinement as good as similarly prepared phosphorus layers, while still retaining >80% carrier activation and sheet resistances of <2 kΩ/square. These excellent characteristics of arsenic represent opportunities to enhance existing capabilities of atomic-scale fabrication of dopant structures in silicon, and may be important for three-dimensional devices, where vertical control of the position of device components is critical.

Stark shift and field ionization of arsenic donors in $^{28}$Si-SOI structures

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Hyperfine Stark effect of shallow donors in silicon

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Evolution of secondary defects in arsenic implanted Si

Single donor ionization energies in a nanoscale CMOS channel

Spin-dependent recombination at arsenic donors in ion-implanted silicon

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon

Optical Characterization of Doped Top Layers in SOI Structures Formed by Ion Implantation

Lattice Location of Supersaturated Arsenic Atoms in Silicon Studied by Channeled Ion Beam

An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory

Recrystallization, redistribution, and electrical activation of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic

Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation

Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication

Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication