Abstract:Understanding (and controlling) hyperfine interactions in semiconductor nanostructures is important for fundamental studies of material properties as well as for quantum information processing with electron, hole, and nuclear-spin states. Through a combination of first-principles density-functional theory (DFT) and $\mathbf{k}\cdot\mathbf{p}$ theory, we have calculated hyperfine tensors for electrons and holes in GaAs and crystalline silicon. Accounting for relativistic effects near the nuclear core, we find contact hyperfine interactions for electrons in GaAs that are consistent with Knight-shift measurements performed on GaAs quantum wells and are roughly consistent with prior estimates extrapolated from measurements on InSb. We find that a combination of DFT and $\mathbf{k}\cdot\mathbf{p}$ theory is necessary to accurately determine the contact hyperfine interaction for electrons at a conduction-band minimum in silicon that is consistent with bulk Knight-shift measurements. For hole spins in GaAs, the overall magnitude of the hyperfine couplings we find from DFT is consistent with previous theory based on free-atom properties, and with heavy-hole Overhauser shifts measured in GaAs (and InGaAs) quantum dots. In addition, we theoretically predict that the heavy-hole hyperfine coupling to the As nuclear spins is stronger and almost purely Ising-like, while the (weaker) coupling to the Ga nuclear spins has significant non-Ising corrections. In the case of hole spins in silicon, we find (surprisingly) that the strength of the hyperfine interaction in the valence band is comparable to that in the conduction band and that the hyperfine tensors are highly anisotropic (Ising-like) in the heavy-hole subspace. These results suggest that the hyperfine coupling cannot be ruled out as a limiting mechanism for coherence ($T_2^{\ast}$) times recently measured for heavy holes in silicon quantum dots.

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory

Hyperfine Stark effect of shallow donors in silicon

Stark shift and field ionization of arsenic donors in $^{28}$Si-SOI structures

Silicon Donor Array as a Disordered One-Dimensional Electron Gas

An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory

Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces

Effect of bond length and radius on superconducting transition temperature for FeAs-based superconductors

Tunable electronic and magneto-optical properties of monolayer arsenene: From GW0 approximation to large-scale tight-binding propagation simulations

Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

Shallow-donor wave functions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin Dependent Recombination

Bulk and Sub-Surface Donor Bound Excitons in Silicon under Electric Fields

Charge carrier induced lattice strain and stress effects on As activation in Si

Exchange between deep donors in semiconductors: a quantum defect approach

First-principles hyperfine tensors for electrons and holes in GaAs and silicon

Stark effect of shallow impurities in Si

Statistical exchange-coupling errors and the practicality of scalable silicon donor qubits

Theoretical Calculation of Quantum-Confined Stark Effect in InAs/GaAs Self-Assembled Quantum Dots

Asymmetric Stark Shifts in In0.18ga0.82as/Gaas Near-Surface Quantum Wells: the Image Charge Effect

Single donor ionization energies in a nanoscale CMOS channel

Electric field induced tuning of electronic correlation in weakly confining quantum dots