SЕNSORS BASED ON POLYCRYSTALLINE 3C-SiC: IMPACT OF BORON DOPING
Володимир Родіонов,Тетяна Братусь,Альгімантас Бубулiс,Volodymyr Rodionov,Тatjana Bratus,Algimantas Bubulis
DOI: https://doi.org/10.20535/1970.65(1).2023.283310
2023-06-30
Abstract:As a chemically inert wide bandgap semiconductor material with high hardness and thermal conductivity, stable electrical characteristics, silicon carbide SiC is attractive for harsh environment electronics and sensors applications. The concept of harsh environment includes extremes of temperature, pressure, shock loads, radiation and chemical attacks those arise in aircraft and automotive engines, industrial gas turbines, during oil and gas exploration, etc.
Lower growing temperatures of polycrystalline cubic silicon carbide, pc-3C-SiC, compared to monocrystalline allow to significantly reduce its cost and expand the possibilities of application. It follows from previous works that the thermal sensitivity of pc -3C-SiC can be significantly increased by doping with an acceptor impurity of boron during the growth of the material. The purpose of this work is to determine the properties of pc-3C-SiC doped with boron for the creation of photosensors and thermosensors, as well as thermal anemometers for extreme operating conditions.
It is shown that pс-3C-SiC doping with a boron impurity in the growth process causes the formation of acceptor-type centers in the band gap and the appearance of features in the photosensitivity spectrum, which may be of practical interest for photovoltaics. For temperatures T > 150K, the conductivity of the doped sample increases almost exponentially with an activation energy of 0.28 eV, which is close to the activation energy of the photoconductivity of the same sample. This indicates that the ionization process of equilibrium and non-equilibrium charge carriers occurs from the same impurity centers. Boron doping causes the appearance of a broad photoconductivity band with a maximum at 1.7 eV in the impurity absorption region of pc-3C-SiC, similar to the situation in single crystal 3C-SiC.
It was determined that the temperature coefficient of resistance for boron-doped pc-3C-SiC is 3.0 ́10-2 K-1 at T=300K and 1.1 ́10-2 K-1 at T=700K, which is almost an order of magnitude higher than for thermocouples, as well as for metals from which anemometer threads are made. The discussion of the obtained results allows to associate the value of the activation energy E=0.28 eV with the level of shallow boron in pc-3C-SiC and to assume this center is a point defect containing a boron atom that replaces a silicon atom in the 3C-SiC lattice, i.e. BSi.
Photosensors that can be used as solar cells in the near-IR range of 0.6 - 1.8 μm, and as photocells in the visible range of 0.4 - 0.6 μm are proposed. The ability of pc-3C-SiC to work in extreme operating conditions, as well as the low cost of device manufacturing technology based on it, compared to other SiC polytypes, allow it to be considered a suitable material for creating temperature sensors, thermo-anemometers and photosensors, as well as detectors for monitoring nuclear facilities.