Abstract:Single-crystal diamond substrates presenting a high concentration of negatively charged nitrogen-vacancy centers (NV-) are on high demand for the development of optically pumped solid-state sensors such as magnetometers, thermometers or electrometers. While nitrogen impurities can be easily incorporated during crystal growth, the creation of vacancies requires further treatment. Electron irradiation and annealing is often chosen in this context, offering advantages with respect to irradiation by heavier particles that negatively affect the crystal lattice structure and consequently the NV- optical and spin properties. A thorough investigation of electron irradiation possibilities is needed to optimize the process and improve the sensitivity of NV-based sensors. In this work we examine the effect of electron irradiation in a previously unexplored regime: extremely high energy electrons, at 155 MeV. We develop a simulation model to estimate the concentration of created vacancies and experimentally demonstrate an increase of NV- concentration by more than 3 orders of magnitude following irradiation of a nitrogen-rich HPHT diamond over a very large sample volume, which translates into an important gain in sensitivity. Moreover, we discuss the impact of electron irradiation in this peculiar regime on other figures of merits relevant for NV sensing, i.e. charge state conversion efficiency and spin relaxation time. Finally, the effect of extremely high energy irradiation is compared with the more conventional low energy irradiation process, employing 200 keV electrons from a transmission electron microscope, for different substrates and irradiation fluences, evidencing sixty-fold higher yield of vacancy creation per electron at 155 MeV.

Conversion of neutral nitrogen-vacancy centers to negatively-charged nitrogen-vacancy centers through selective oxidation

Efficient conversion of nitrogen to nitrogen-vacancy centers in diamond particles with high-temperature electron irradiation

Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

Rapid, in-situ neutralization of nitrogen- and silicon-vacancy centers in diamond using above-band-gap optical excitation

Creation of color centers in diamond by recoil implantation through dielectric films

Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation

Fabrication and characterization of diamond nitrogen-vacancy center through argon ions etching

Negative charge enhancement of near-surface nitrogen vacancy centers by multicolor excitation

Stability of near surface nitrogen vacancy centers using dielectric surface passivation

Optically Coherent Nitrogen-Vacancy Centers in HPHT Treated Diamonds

Optical Manipulation of the Charge State of Nitrogen-Vacancy Center in Diamond

Optical tuning of the diamond Fermi level measured by correlated scanning probe microscopy and quantum defect spectroscopy

Diamond-defect engineering of NV- centers using ion beam irradiation

Creation of NV centers in diamond under 155 MeV electron irradiation

Stability of Near-Surface Nitrogen Vacancy Centers Using Dielectric Surface Passivation

Creation, Control, and Modeling of NV Centers in Nanodiamonds

Photoconversion of shallow nitrogen-vacancy centers in flat and nanostructured diamond under high-power laser irradiation

Optical and spin properties of nitrogen vacancy centers formed along the tracks of high energy heavy ions

The study of the efficiency of nitrogen to NV-center conversion in high nitrogen content samples