Abstract:Nitrogen-vacancy (NV) and silicon-vacancy (SiV) color defects in diamond are promising systems for applications in quantum technology. The NV and SiV centers have multiple charge states, and their charge states have different electronic, optical and spin properties. For the NV centers, most investigations for quantum sensing applications are targeted on the negatively charged NV (NV$^{-}$), and it is important for the NV centers to be in the NV$^{-}$ state. However, it is known that the NV centers are converted to the neutrally charged state (NV$^{0}$) under laser excitation. An energetically favorable charge state for the NV and SiV centers depends on their local environments. It is essential to understand and control the charge state dynamics for their quantum applications. In this work, we discuss the charge state dynamics of NV and SiV centers under high-voltage nanosecond pulse discharges. The NV and SiV centers coexist in the diamond crystal. The high-voltage pulses enable manipulating the charge states efficiently. These voltage-induced changes in charge states are probed by their photoluminescence spectral analysis. The analysis result from the present experiment shows that the high-voltage nanosecond pulses cause shifts of the chemical potential and can convert the charge states of NV and SiV centers with the transition rates of $\sim$ MHz. This result also indicates that the major population of the SiV centers in the sample is the doubly negatively charged state (SiV$^{2-}$), which is often overlooked because of its non-fluorescent and non-magnetic nature. This demonstration paves a path for a method of rapid manipulation of the NV and SiV charge states in the future.

Optical tuning of the diamond Fermi level measured by correlated scanning probe microscopy and quantum defect spectroscopy

Optical tuning of the diamond Fermi level measured by correlated scanning probe microscopy and quantum defect spectroscopy

Rapid, in-situ neutralization of nitrogen- and silicon-vacancy centers in diamond using above-band-gap optical excitation

Subdiffraction optical manipulation of the charge state of nitrogen vacancy center in diamond

Enhanced quantum properties of shallow diamond atomic defects through nitrogen surface termination

Sub-diffraction optical manipulation of the chargestate of nitrogen vacancy center in diamond

Probing the Evolution of the Electron Spin Wave Function of the Nitrogen-Vacancy Center in Diamond via Pressure Tuning

Optical Manipulation of the Charge State of Nitrogen-Vacancy Center in Diamond

Shallow Silicon Vacancy Centers with lifetime-limited optical linewidths in Diamond Nanostructures

Heralded initialization of charge state and optical-transition frequency of diamond tin-vacancy centers

Effect of fluorinated diamond surface on charge state of nitrogen-vacancy centers

Fast optoelectronic charge state conversion of silicon vacancies in diamond

Heralded initialization of charge state and optical transition frequency of diamond tin-vacancy centers

Probing NV and SiV charge state dynamics using high-voltage nanosecond pulse and photoluminescence spectral analysis

Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond

Identification of defects and the origins of surface noise on hydrogen-terminated (100) diamond

Optically Coherent Nitrogen-Vacancy Centers in HPHT Treated Diamonds

Identifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers

Laser Activation of Single Group-IV Colour Centres in Diamond

Localized Nitrogen-Vacancy centers generated by low-repetition rate fs-laser pulses