Abstract:Single-crystal diamond substrates presenting a high concentration of negatively charged nitrogen-vacancy centers (NV-) are on high demand for the development of optically pumped solid-state sensors such as magnetometers, thermometers or electrometers. While nitrogen impurities can be easily incorporated during crystal growth, the creation of vacancies requires further treatment. Electron irradiation and annealing is often chosen in this context, offering advantages with respect to irradiation by heavier particles that negatively affect the crystal lattice structure and consequently the NV- optical and spin properties. A thorough investigation of electron irradiation possibilities is needed to optimize the process and improve the sensitivity of NV-based sensors. In this work we examine the effect of electron irradiation in a previously unexplored regime: extremely high energy electrons, at 155 MeV. We develop a simulation model to estimate the concentration of created vacancies and experimentally demonstrate an increase of NV- concentration by more than 3 orders of magnitude following irradiation of a nitrogen-rich HPHT diamond over a very large sample volume, which translates into an important gain in sensitivity. Moreover, we discuss the impact of electron irradiation in this peculiar regime on other figures of merits relevant for NV sensing, i.e. charge state conversion efficiency and spin relaxation time. Finally, the effect of extremely high energy irradiation is compared with the more conventional low energy irradiation process, employing 200 keV electrons from a transmission electron microscope, for different substrates and irradiation fluences, evidencing sixty-fold higher yield of vacancy creation per electron at 155 MeV.

Photoconversion of shallow nitrogen-vacancy centers in flat and nanostructured diamond under high-power laser irradiation

Divergent effects of laser irradiation on ensembles of nitrogen-vacancy centers in bulk and nano-diamonds: implications for biosensing

Near-Infrared-Enhanced Charge-State Conversion for Low-Power Optical Nanoscopy with Nitrogen-Vacancy Centers in Diamond

Low temperature photo-physics of single NV centers in diamond

Electron-induced state conversion in diamond NV centers measured with pump-probe cathodoluminescence spectroscopy

Optical Manipulation of the Charge State of Nitrogen-Vacancy Center in Diamond

Localized Nitrogen-Vacancy centers generated by low-repetition rate fs-laser pulses

Optically Detected Magnetic Resonance of Nitrogen-Vacancy Centers in Diamond under Weak Laser Excitation

Low-Charge-Noise Nitrogen-Vacancy Centers in Diamond Created Using Laser Writing with a Solid-Immersion Lens

Stability of near surface nitrogen vacancy centers using dielectric surface passivation

Efficient conversion of nitrogen to nitrogen-vacancy centers in diamond particles with high-temperature electron irradiation

Charge state dynamics of the nitrogen vacancy center in diamond under 1064 nm laser excitation

Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond

Impact of Charge Conversion on NV-Center Relaxometry

Stability of Near-Surface Nitrogen Vacancy Centers Using Dielectric Surface Passivation

High-Throughput Detection and Manipulation of Single Nitrogen-Vacancy Center's Charge in Nanodiamonds

Creation, Control, and Modeling of NV Centers in Nanodiamonds

Diamond-defect engineering of NV- centers using ion beam irradiation

Fluorescence Modulation of the Nitrogen-Vacancy Center with Competition Between Charge-State Conversion and Stimulated Emission

Creation of NV centers in diamond under 155 MeV electron irradiation

The study of the efficiency of nitrogen to NV-center conversion in high nitrogen content samples