Abstract:Femtosecond laser ablation has become one of the important structural processing methods for the third-generation semiconductor material, silicon carbide (SiC), and it is gradually being employed in the manufacture of microelectromechanical systems and microelectronic devices. Experimental study has been performed on infrared single and multiple pulses (1035 nm) femtosecond laser ablation of SiC at various processing parameters. Diameters of laser ablation spots on 4H-SiC were measured to estimate the absorption threshold for material modification and structural transformation, which were 2.35 J/cm2 and 4.97 J/cm2, respectively. In the multiple-pulse scribing ablation for microgrooves, the ablation threshold dropped to 0.70 J/cm2 due to the accumulation effect when the effective pulse number reached 720. The calculated average of the thermally stimulated ablation depth of 4H-SiC is 22.4 nm, which gradually decreased with the raising of the effective pulse number. For obtaining square trenches with precise and controllable depths and a smooth bottom in 4H-SiC, the effects of processing parameters on the material removal rate and surface roughness are discussed. The ablation rate per pulse is almost constant, even if the effective pulse number varies. The reduction of laser spot overlapping ratio in x direction has a greater weakening effect on the material removal rate than that in y direction. The precise amount of material removal can still be controlled, while modulating the surface roughness of the ablated features by changing the hatch rotation angle. This research will help to achieve controllable, accurate, and high-quality machining results in SiC ablation, using infrared femtosecond laser.

Fabrication of 4H–SiC nanoparticles using femtosecond pulsed laser ablation in deionized water

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Ytterbium femtosecond fiber laser ablation synthesis of silicon nanocrystals in water: Laser frequency and pulse energy dependence

Fabrication of Nanostructures on 6H SiC Crystal Induced by Femtosecond Laser

Experimental study on femtosecond laser ablation of 4H-SiC substrate

Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser

Femtosecond Laser Nanostructuring on a 4H-Sic Surface by Tailoring the Induced Self-Assembled Nanogratings

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Resonant Optical Properties of Crystalline Silicon Nanoparticles Fabricated by Laser Ablation-Based Methods

Investigation of structural transformation and residual stress under single femtosecond laser pulse irradiation of 4H–SiC

Synthesis Of Sic-Si3n4 Composite Nanoparticles By Laser-Induced Chemical Deposition

High-quality structures on 4H-SiC fabricated by femtosecond laser LIPSS and chemical etching

Fabrication of Silicon Carbide Nanoparticles Using Pulsed Laser Ablation in Liquid and Viscosity Optimization via Solvent Tuning

Study on the influence of material properties in femtosecond laser ablation of 6H-SiC in water and SERS-based applications

Study of Femtosecond Laser Ablation Effect on Micro-Processing for 4H-SiC Substrate

Femtosecond laser two-beam interference applied to 4H-SiC surface hierarchical micro-nano structure fabrication

Investigation of ablation efficiency and properties of silicon carbide nanoparticles synthesised using pulsed laser ablation in liquid

Fabricating physicochemical microstructures with super hydrophilicity on Cf/SiC composites surface via picosecond-laser induced ablation

Single-step additive manufacturing of silicon carbide through laser-induced phase separation

Laser slicing of 4H-SiC wafers based on picosecond laser-induced micro-explosion via multiphoton processes

Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots