Abstract:Femtosecond laser ablation has become one of the important structural processing methods for the third-generation semiconductor material, silicon carbide (SiC), and it is gradually being employed in the manufacture of microelectromechanical systems and microelectronic devices. Experimental study has been performed on infrared single and multiple pulses (1035 nm) femtosecond laser ablation of SiC at various processing parameters. Diameters of laser ablation spots on 4H-SiC were measured to estimate the absorption threshold for material modification and structural transformation, which were 2.35 J/cm2 and 4.97 J/cm2, respectively. In the multiple-pulse scribing ablation for microgrooves, the ablation threshold dropped to 0.70 J/cm2 due to the accumulation effect when the effective pulse number reached 720. The calculated average of the thermally stimulated ablation depth of 4H-SiC is 22.4 nm, which gradually decreased with the raising of the effective pulse number. For obtaining square trenches with precise and controllable depths and a smooth bottom in 4H-SiC, the effects of processing parameters on the material removal rate and surface roughness are discussed. The ablation rate per pulse is almost constant, even if the effective pulse number varies. The reduction of laser spot overlapping ratio in x direction has a greater weakening effect on the material removal rate than that in y direction. The precise amount of material removal can still be controlled, while modulating the surface roughness of the ablated features by changing the hatch rotation angle. This research will help to achieve controllable, accurate, and high-quality machining results in SiC ablation, using infrared femtosecond laser.

Study on the influence of material properties in femtosecond laser ablation of 6H-SiC in water and SERS-based applications

New Aspects of Femtosecond Laser Ablation of Si in Water: A Material Perspective

Experimental study on femtosecond laser ablation of 4H-SiC substrate

Femtosecond Laser-Induced Phase Transformation on Single-Crystal 6H-SiC

Femtosecond laser ablation behavior of SiC/SiC composites in air and water environment

Study of Femtosecond Laser Ablation Effect on Micro-Processing for 4H-SiC Substrate

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Fabrication of 4H–SiC nanoparticles using femtosecond pulsed laser ablation in deionized water

Removal mechanism of SiC/SiC composites by underwater femtosecond laser ablation

Resonant Optical Properties of Crystalline Silicon Nanoparticles Fabricated by Laser Ablation-Based Methods

Multi-pulse femtosecond laser ablation of SiC/SiC composites: Morphological evolution, oxidation mechanisms and component characterization

Investigations on the ablation behavior of C/SiC under femtosecond laser

Laser ablation of SiC/SiC ceramic matrix composites: Morphological characterization, component evolution and oxidation mechanisms

Investigations on the oxidation behavior and removal mechanism of SiC/SiC composites by multi-pulse femtosecond laser ablation

Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser

Fabrication of Nanostructures on 6H SiC Crystal Induced by Femtosecond Laser

Investigation of ablation efficiency and properties of silicon carbide nanoparticles synthesised using pulsed laser ablation in liquid

Heterogeneous ablation behavior of SiCf/SiC composite by nanosecond pulse laser

Fabricating physicochemical microstructures with super hydrophilicity on Cf/SiC composites surface via picosecond-laser induced ablation

Two-dimensional periodic surface nanotexturing of 6H-SiC by ultrashort laser pulses