Abstract:In this study, we revisit the oxidation reactions of a single-crystal silicon wafer and compare the reported crystal structures of the formed oxides with the original diamond structure of single-crystal silicon. It is commonly assumed that interstitial silicon atoms are always emitted during oxidation at the reactive interface between silicon and the formed oxide due to volume differences. However, it is important to acknowledge that this phenomenon may not always be observed. Thermal equilibrium studies have revealed that a certain percentage of silicon atoms in the diamond structure remains even after surface oxidation [Kamiyama and Sueoka, J. Appl. Phys. 134, 115301 (2023)]. These retained silicon atoms undergo a transformation into a different crystal structure, presenting as β-cristobalite (space group: P41212) rather than the anticipated non-ideal cristobalite (space group: Fd-3m). Our ab initio calculations indicated that the latter remains stable next to a quartz-based structure, exhibiting optimal compatibility with the Si (001) surface. This quartz-based structure is formed through the emission of a Si atom during the oxidation of single-crystal silicon, finally forming a quartz/Si (001) interface. Therefore, we propose a coexisting model involving an alternative β-cristobalite and a quartz crystal structure originating from the surface oxidation of single-crystal silicon. This model offers an explanation for why thermally oxidized films derived from single-crystal silicon exhibit an amorphous nature. In addition, studies have revealed that the oxide precipitates observed in Si crystals are cristobalite and coesite. Hence, the qualitative differences in SiO2/Si interfaces between surface and internal oxidations in metal-gettering effectivity shown in experimental literature require clarification. We also discuss the conditions that prevent the emission of Si atoms.

First-principles study on barrier height of silicon emission from interface into oxide during silicon thermal oxidation

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Studies of defect states in the interface between SiO2 and a-Si:H films

First-Principles Study on Leakage Current through Si/SiO$_2$ Interface

Modeling the Initial Stages of Si(100) Thermal Oxidation: An Ab-initio Approach

First-Principles Study of Oxygen Vacancy Defects in β-quartz SiO2/Si Interfaces

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

AN INTERFACE KINETICS STUDY OF OXIDATION PROCESS OF SILICON

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Atomic bonding and electrical potential at metal/oxide interfaces, a first principle study

Unravelling the silicon-silicon dioxide interface under different operating conditions

Interface Reaction of High-k Gate Stack Structures Observed by High-Resolution RBS

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Revisiting single-crystal silicon oxidation: A comprehensive analysis of crystal structural transformation to SiO2

The interface between silicon and a high-k oxide

First principle thermodynamic study of oxygen vacancy at metal/oxide interface

Molecular dynamics simulation of silicon oxidation enhanced by energetic hydrogen ion irradiation

Oxygen Diffusion in Silicon: The Influence of Hydrogen

Threshold displacement energy of amorphous SiO2: A molecular dynamics study

Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation