Abstract:Silicon carbide (SiC) has been widely added into light metals, e.g., Al, to enhance their mechanical performance and corrosion resistance. SiC particle-reinforced metal matrix composites (SiC-MMCs) exhibit low weight/volume ratios, high strength/hardness, high corrosion resistance, and thermal stability. They have potential applications in aerospace, automobiles, and other specialized equipment. The macro-mechanical properties of Al/SiC composites depend on the local structures and chemical interactions at the Al/SiC interfaces at the atomic level. Moreover, the added SiC particles may act as potential nucleation sites during solidification. We investigate local atomic ordering and chemical interactions at the interfaces between liquid Al (Al(l) in short) and polar SiC substrates using ab initio molecular dynamics (AIMD) methods. The simulations reveal a rich variety of interfacial interactions. Charge transfer occurs from Al(l) to C-terminating atoms (Δq = 0.3e/Al on average), while chemical bonding between interfacial Si and Al(l) atoms is more covalent with a minor charge transfer of Δq = 0.04e/Al. The prenucleation at both interfaces is moderate with three to four recognizable layers. The information obtained here helps increase understanding of the interfacial interactions at Al/SiC at the atomic level and the related macro-mechanical properties, which is helpful in designing novel SiC-MMC materials with desirable properties and optimizing related manufacturing and machining processes.

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Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Suppression of SiC Inclusions in 4H-SiC Crystals Grown from Si–Cr–C-Based Solution Saturated with SiC

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Effect of Sn and Si on the Synthesis of Ti<sub>3</sub>Al(Sn/Si)C<sub>2</sub> by Self-Propagating High-Temperature Sintering

Ultrafast low-temperature near-seamless joining of Cf/SiC using a sacrificial Pr3Si2C2 filler via electric current field-assisted sintering technique

Study on Purification Technology of Silicon Carbide Crystal Growth Powder

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The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Possibility of Complete Collecting Eutectic Si and Primary Si as Purified Si During Al-Si Solvent Refining with Zr Additions

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Wettability and spreading behavior of Sn–Cr alloys on SiC

Effect of Si Content on the Morphology Evolution of the Si Primary Dendrites in Al-Si Alloy Solvent Refining Process

Synthesis of High Purity SiC Powder for High-resistivity SiC Single Crystals Growth

Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates

SiC Crystal Growth from Transition Metal Silicide Fluxes