Abstract:Photonic switches have attractive application prospects in optical communication data networks that require dynamic reconfiguration. Integrating optical switching devices with optical fiber, the most widely deployed photonic technology platform, can realize signal transmission and processing in practical applications. Here, we demonstrate the multilevel optical switching using the phase-change material Ge2Sb2Te5 (GST) integrated on a graded-index multimode fiber. This switching process works by exploiting the significant difference in extinction coefficient between the crystalline state and the amorphous state of the GST. Using GST to achieve the switch function, no external energy source is needed to maintain the existing state of the switch, and the device is nonvolatile. This multi-level optical switch is an all-fiber integrated device. We apply GST to the end facets of the graded-index multimode fiber by magnetron sputtering, which is a reflective structure. A pulsing scheme is used to control the optical propagation state of the optical modulation signal to realize the switching function. It can store up to 11 non-volatile reliable and repeatable levels encoded by the pump source laser with a wavelength of 1550 nm. At the same time, the switching process between states is on the order of hundreds of nanoseconds. The present experimental results demonstrate the feasibility of 11 multilevel states in the field of optical fibers commonly used in communications. It can be well coupled with the all-fiber terminal device. It also shows that the device is still applicable in the 1525 nm∼1610 nm broadband range, promising for designing future multilevel photonic switches and memory devices.

Non‐Volatile Optical Switch Element Enabled by Low‐Loss Phase Change Material

Phase Change Material Enabled 2 × 2 Silicon Nonvolatile Optical Switch.

All-optically Modulated Nonvolatile Optical Switching Based on a Graded-Index Multimode Fiber.

Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

Non‐Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low‐Loss Phase Change Material

Magnetron-sputtered and Thermal-Evaporated Low-Loss Sb-Se Phase-Change Films in Non-Volatile Integrated Photonics

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In<sub>2</sub>O<sub>3</sub>/GST Segmented Structures

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In2O3/GST Segmented Structures

Photothermal Switching Based on Silicon Mach–Zehnder Interferometer Integrated with Light Absorber

Reconfigurable InP waveguide components using the Sb2S3 phase change material

Compact Non-Volatile Multilevel Sb$_2$Se$_3$ Electro-Optical Switching in the Mid-Infrared Group-IV-Photonics Platform

Mach-Zehnder Silicon-Photonic Switch with Low Random Phase Errors

Ultra-compact Optical Switch Based on Sb2Se3-assisted PhC-like Subwavelength Structures

Design of Low Loss 1 × 1 and 1 × 2 Phase-Change Optical Switches with Different Crystalline Phases of Ge2Sb2Te5 Films

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Optical switching beyond a million cycles of low-loss phase change material Sb$_2$Se$_3$

Nonvolatile Silicon Photonic 1×2 Switch by Integrating the Phase Change Chalcogenide into Microring Network

Compact Nonvolatile 2×2 Photonic Switch Based on Two-Mode Interference

Nonvolatile multi-level adjustable optical switch based on the phase change material

Six Bit Optical Phase States Realized in Nonvolatile Phase Shifter Based on N-Doped Sb2Se3