Self-assembly of laterally aligned GaAs quantum dot pairs

M. Yamagiwa,T. Mano,T. Kuroda,T. Tateno,K. Sakoda,G. Kido,N. Koguchi,F. Minami

DOI: https://doi.org/10.1063/1.2354007

2006-07-21

Abstract:We report the fabrication of self-assembled, strain-free GaAs/Al$_{0.27}$Ga$_{0.73}$As quantum dot pairs which are laterally aligned in the growth plane, utilizing the droplet epitaxy technique and the anisotropic surface potentials of the GaAs (100) surface for the migration of Ga adatoms. Photoluminescence spectra from a single quantum dot pair, consisting of a doublet, have been observed. Finite element energy level calculations of a model quantum dot pair are also presented.

Materials Science

What problem does this paper attempt to address?

### What problem does this paper attempt to solve?

This paper aims to solve the problem of how to fabricate laterally - arranged strain - free GaAs/Al\(_{0.27}\)Ga\(_{0.73}\)As quantum dot pairs (QDPs) through self - assembly technology. Specifically, the research team utilizes droplet epitaxy technology and the anisotropic surface potential of the GaAs (100) surface to achieve this goal. The key points of the paper include:

1. **Preparation method**:
- Using droplet epitaxy technology, Ga droplets are formed on the GaAs (100) surface, and then these droplets are crystallized into GaAs nanocrystals by precisely controlling the arsenide (As\(_4\)) flux.
- Through this method, researchers can observe a bimodal structure that is clearly split along the [0 \(\bar{1}1\)] direction, indicating the formation of laterally - arranged quantum dot pairs.

2. **Study of optical properties**:
- The photoluminescence (PL) properties of a single quantum dot pair are studied to understand its confined energy levels and the interaction between carriers.
- The micro - area photoluminescence (\(\mu\)PL) spectra of two different single quantum dot pairs (QDP - a and QDP - b) are observed, the bimodal emission phenomenon is found, and the energy spacing of these emission lines is analyzed.

3. **Theoretical calculation and explanation**:
- The electronic energy level calculation of the strain - free model quantum dot pair is carried out using the finite element method, assuming that the quantum dot pair consists of two truncated and overlapping cones.
- The eigenvalues \(E_1\) to \(E_7\) of the first seven bound states are calculated, and the mixing of energy levels as the distance between the two quantum dots changes is explored.
- It is found that the bimodal emissions (such as A1 and A2) observed in the experiment may correspond to the bonding/antibonding states (\(s\sigma_g\) and \(s\sigma_u\)) formed by s - like states, while other peaks (such as B and C) correspond to p - states.

### Summary

The main purpose of this paper is to show how to fabricate laterally - arranged strain - free GaAs/Al\(_{0.27}\)Ga\(_{0.73}\)As quantum dot pairs through droplet epitaxy technology and study their optical properties and electronic structures. The research results indicate that there may be a tunneling coupling effect in such quantum dot pairs, but the origin of the specific emission lines still needs further study, for example, through means such as applying an in - plane electric field, photon - correlation measurement, and time - resolved spectral evolution study for verification.