Abstract:▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of layer-by-layer growth. Elastic relaxation on the facet edges, renormalization of the surface energy of the facets, and interaction between neighboring islands via the substrate are the driving forces for self-organized growth. The dimensions of the defect-free islands are of the order λ B , the de Broglie wavelength, and provide three-dimensional quantum confinement of carriers. Self-organized In(Ga)As/GaAs quantum dots, or quantum boxes, are grown by molecular beam expitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) on GaAs, InP, and other substrates and are being incorporated in microelectronic and opto-electronic devices. The use of strain to produce self-organized quantum dots has now become a well-accepted approach and is widely used in III–V semiconductors and other material systems. Much progress has been made in the area of growth, where focus has been on size control, and on optical characterization, where the goal has been the application to lasers and detectors. The unique carrier dynamics in the dots, characterized by femtosecond pump-probe spectroscopy, has led to novel device applications. This article reviews the growth and electronic properties of InGaAs quantum dots and the characteristics of interband and intersublevel lasers and detectors and modulation devices.

Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

Widely Tunable Intersubband Energy Spacing of Self-Assembled Inas/Gaas Quantum Dots Due to Interface Intermixing

Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission

Spectral Broadening and Population Relaxation in A Gaas Interfacial Quantum Dot Ensemble and Quantum Well Nanostructure

Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots

QUANTUM DOT OPTO-ELECTRONIC DEVICES

A Theoretical Study of Structural Disorder and Photoluminescence Linewidth in InGaAs/GaAs Self Assembled Quantum Dots

Structural, Optical and Intraband Absorption Properties of Vertically Aligned In0.32Ga0.68As/GaAs Quantum Dots Superlattices

Insight into Optical Properties of Strain-Free Quantum Dot Pairs

Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots

Enabling Ultranarrow Blue Emission Linewidths in Colloidal Alloy Quantum Dots by Decreasing the Exciton Fine Structure Splitting and Exciton-Phonon Coupling

A novel site-controlled quantum dot system with high uniformity and narrow excitonic emission

Near Infrared Broadband Emission of In0.35ga0.65as Quantum Dots on High Index Gaas Surfaces

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

Exciton localization and temperature stability in self‐organized InAs quantum dots

Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence