Abstract:▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of layer-by-layer growth. Elastic relaxation on the facet edges, renormalization of the surface energy of the facets, and interaction between neighboring islands via the substrate are the driving forces for self-organized growth. The dimensions of the defect-free islands are of the order λ B , the de Broglie wavelength, and provide three-dimensional quantum confinement of carriers. Self-organized In(Ga)As/GaAs quantum dots, or quantum boxes, are grown by molecular beam expitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) on GaAs, InP, and other substrates and are being incorporated in microelectronic and opto-electronic devices. The use of strain to produce self-organized quantum dots has now become a well-accepted approach and is widely used in III–V semiconductors and other material systems. Much progress has been made in the area of growth, where focus has been on size control, and on optical characterization, where the goal has been the application to lasers and detectors. The unique carrier dynamics in the dots, characterized by femtosecond pump-probe spectroscopy, has led to novel device applications. This article reviews the growth and electronic properties of InGaAs quantum dots and the characteristics of interband and intersublevel lasers and detectors and modulation devices.

A novel site-controlled quantum dot system with high uniformity and narrow excitonic emission

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Site-controlled growth of In(Ga)As/GaAs quantum dots on patterned substrate

Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission

Complex optical signatures from quantum dot nanostructures and behavior in inverted pyramidal recesses

Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy

Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots

Highly Uniform and Symmetric Epitaxial InAs Quantum Dots Embedded Inside Indium Droplet Etched Nanoholes.

Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters

Resonance fluorescence of a site-controlled quantum dot realized by the buried-stressor growth technique

Near Infrared Broadband Emission of In0.35ga0.65as Quantum Dots on High Index Gaas Surfaces

Single photon emission from ODT passivated near-surface GaAs quantum dots

Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

QUANTUM DOT OPTO-ELECTRONIC DEVICES

Stoichiometry-Controlled InP-Based Quantum Dots: Synthesis, Photoluminescence, and Electroluminescence

Growth and Photoluminescence of InxGa1−xAs Quantum Dots on the Surface of GaAs Nanowires by Metal Organic Chemical Vapor Deposition

Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots