Abstract:Despite the superiority in quantum properties, self-assembled semiconductor quantum dots face challenges in terms of scalable device integration because of their random growth positions, originating from the Stranski-Krastanov growth mode. Even with existing site-controlled growth techniques, for example, nanohole or buried stressor concepts, a further lithography and etching step with high spatial alignment requirements isnecessary to accurately integrate QDs into the nanophotonic devices. Here, we report on the fabrication and characterization of strain-induced site-controlled microcavities where site-controlled quantum dots are positioned at the antinode of the optical mode field in a self-aligned manner without the need of any further nano-processing. We show that the Q-factor, mode volume, height, and the ellipticity of site-controlled microcavities can be tailored by the size of an integrated AlAs/Al2O3 buried stressor, with an opening ranging from 1 to 4 $\mu$m. Lasing signatures, including super-linear input-output response, linewidth narrowing near threshold, and gain competition above threshold, are observed for a 3.6-$\mu$m self-aligned cavity with a Q-factor of 18000. Furthermore, by waiving the rather complex lateral nano-structuring usually performed during the fabrication process of micropillar lasers and vertical-cavity surface emitting lasers, quasi-planar site-controlled cavities exhibit no detrimental effects of excitation power induced heating and thermal rollover. Our straightforward deterministic nanofabrication concept of high-quality quantum dot microcavities integrates seamlessly with the industrial-matured manufacturing process and the buried-stressor techniques, paving the way for exceptional scalability and straightforward manufacturing of high-\b{eta} microlasers and bright quantum light sources.

Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

Self-aligned photonic defect microcavities with site-controlled quantum dots

Resonance fluorescence of a site-controlled quantum dot realized by the buried-stressor growth technique

QUANTUM DOT OPTO-ELECTRONIC DEVICES

In-situ Laser Nano-Patterning for Ordered InAs/GaAs(001) Quantum Dot Growth

&Itin&It-&Itsitu&It Laser Nano-Patterning For Ordered Inas/Gaas(001) Quantum Dot Growth

Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy

Site-controlled growth of In(Ga)As/GaAs quantum dots on patterned substrate

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Machine-learning-assisted and real-time-feedback-controlled growth of InAs/GaAs quantum dots

Multiple Stacking of InGaAs/GaAs (731) Nanostructures

Enhancing the photon-extraction efficiency of site-controlled quantum dots by deterministically fabricated microlenses

Growth of High Density Self-Assembled InAs Quantum Dots on As-pressure-modulated InAlAs Multilayer Structures on InP(001) Substrate

Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots

Wafer-Scale Epitaxial Modulation of Quantum Dot Density

Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters

Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Growth And Emission Tuning Of Inas/Inp Quantum Dots Superlattice