Abstract:A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative voltages to these gates the underlying electron gas is depleted and a lateral quantum dot is formed, the size of which can be adjusted by the gate voltage. We observe single-electron operation with Coulomb blockade behavior below 1K. Gate leakage currents are well controlled, indicating that the recently encountered problems with Schottky gates for this type of application are not an inherent limitation of modulation-doped Si/SiGe heterostructures, as had been speculated.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is the fabrication and operation of single - electron transistors (SETs) in silicon/silicon - germanium (Si/SiGe) heterostructures, especially the formation of lateral quantum dots through the use of the split - gate technique. Specifically, the authors aim to verify the following points: 1. **Solve the leakage current problem**: Previous studies have pointed out that when using Schottky split - gates in Si/SiGe heterostructures, due to threading dislocations in the crystal and Fermi level pinning, excessive leakage current will be caused. This makes the formation of lateral quantum dots difficult. The authors of this paper hope to show through experiments that these leakage currents are not an inherent limitation of modulation - doped Si/SiGe heterostructures. 2. **Achieve single - electron operation**: By observing Coulomb blockade behavior at low temperatures, the functionality of single - electron transistors is proven. Coulomb blockade refers to the oscillation phenomenon of conductance when the number of electrons in the quantum dot changes and the energy barrier caused by Coulomb repulsion needs to be overcome. 3. **Verify technical feasibility**: It is shown that the split - gate technique can be used for efficient coupling of quantum dots and has the potential for high integration, which is crucial for future applications based on spintronics and quantum computing. ### Experimental methods and results - **Material and device preparation**: High - quality n - type modulation - doped Si/SiGe heterostructures were grown using molecular beam epitaxy (MBE) technology. Pd Schottky split - gates were fabricated through electron - beam lithography and metal deposition processes. - **Performance testing**: - The leakage current was measured in a low - temperature environment of about 300mK. The results showed that in the voltage range below - 3V, the leakage current was lower than 0.02nA, far lower than the expected current value under Schottky diode characteristics. - The Coulomb blockade phenomenon was observed, manifested as resistance oscillation, especially in the gate voltage range between - 1.46V and - 1.6V. - By measuring the conductance change at different gate voltages, the energy spectrum of the quantum dot was obtained, which presented a typical "diamond" shape (Coulomb diamonds), further confirming the working principle of single - electron transistors. ### Conclusion The paper successfully shows that in modulation - doped Si/SiGe heterostructures, stable single - electron transistor operation can be achieved using the split - gate technique, and the leakage current is effectively controlled. This result lays the foundation for the future development of high - performance and integrable spintronics and quantum computing devices.

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