High Passivation Performance of Cat-CVD i-a-Si:H Derived from Bayesian Optimization with Practical Constraints

Ryota Ohashi,Kentaro Kutsukake,Huynh Thi Cam Tu,Koichi Higashimine,Keisuke Ohdaira
DOI: https://doi.org/10.1021/acsami.3c16202
IF: 9.5
2024-02-09
ACS Applied Materials & Interfaces
Abstract:High-quality passivation with intrinsic hydrogenated amorphous Si (i-a-Si:H) is essential for achieving high-efficiency Si heterojunction (SHJ) solar cells. The formation of i-a-Si:H with a high passivation quality requires strict control of the hydrogen content and film density. In this study, we report the effective discovery of i-a-Si:H deposition conditions through catalytic chemical vapor deposition using Bayesian optimization (BO) to maximize the passivation performance. Another...
materials science, multidisciplinary,nanoscience & nanotechnology
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