Abstract:The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of $\Gamma$ and $L$ quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of $\mathbf{k\cdot p}$ theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50 meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.

Radiative lifetimes of spatially indirect excitons in type-II InAs/GaAsSb quantum dots

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Optical Transitions in Type-Ii InAs∕GaAs Quantum Dots Covered by a GaAsSb Strain-Reducing Layer

Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

Optical Studies of InAs Quantum Dots in III-V Semiconductors

Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots

Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 um

Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Charged exciton emission at 1.3 $μ$m from single InAs quantum dots grown by metalorganic chemical vapor deposition

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect

Exciton dynamics in self-organized InAs/GaAs quantum dots

Exciton localization and temperature stability in self‐organized InAs quantum dots

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems

Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures versus Quantum Well Compositions

Exciton States In Wurtzite Ingan Coupled Quantum Dots