Abstract:The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of $\Gamma$ and $L$ quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of $\mathbf{k\cdot p}$ theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50 meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.

Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence

Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

Study of Optical Properties in GaAs1-xSbx/GaAssingle Quant Um Wells

Selectively Excited Photoluminescence of GaAs1−xSbx/GaAs Single Quantum Wells

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Optical Transitions in Type-Ii InAs∕GaAs Quantum Dots Covered by a GaAsSb Strain-Reducing Layer

Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures

Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures versus Quantum Well Compositions

Bismuth-induced band-tail states in GaAsBi probed by photoluminescence

Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Photoluminescence investigation on highly p + -doped GaAs 1− y Sb y ( y <0.3)

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Spontaneous Emission Mechanisms of Ga in As N ∕ Ga As Quantum Dot Systems

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Optical Transitions In Ganas/Gaas Single Quantum Well

The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates

Effects Of Gaas On Photoluminescence Properties Of Self-Assembled Inas Quantum Dots