Abstract:Unintentionally doped InN has been grown onto an atomically flat AlN intermediate layer on top of the Si(111) substrate using plasma‐assisted molecular beam epitaxy (PA‐MBE). Though there are lots of micrometer‐size indium droplets randomly distributed on the top of the surface, the highest electron mobility of this InN thin film measured at room temperature by van der Pauw method is still higher than 1000 cm2/V s with a carrier concentration of 5–8.9 × 1018 cm–3. A symmetrical X‐ray rocking curve is measured and the full‐width‐at‐half‐maximum (FWHM) of this sample is 1089 arcsec. In the meantime, the threading dislocation (TD) density of this material is estimated to around 9.8 × 108 cm–2 – 7.5 × 109 cm–2 depending on the probing regions that are studied by the etching technique and field‐emission scanning electron microscopy (FE‐SEM). (2 × 1) in situ reflection high‐energy electron diffraction (RHEED) patterns show that this sample is grown under In‐rich environment with possible In‐terminated surface. From the FE‐SEM pictures which were taken from the samples after 10 minutes etching in hydrochloride, the surface morphology shows In‐polarity‐like patterns that coincide with those procured in RHEED. To select and grow a high‐quality laminated AlN as intermediate layer is believed to be the major step in obtaining this high electron mobility InN thin film on Si substrate. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

High‐quality and thick InN films grown on 2‐inch sapphire substrate by molecular‐beam epitaxy

Growth of Thick InN by Molecular Beam Epitaxy

Epitaxial Growth and Interfaces of High-Quality InN Films Grown on Nitrided Sapphire Substrates

MOCVD Growth of InN Films on Sapphire Substrates

Growth and Characterization of Inn Thin Films on Sapphire by Mocvd

High-Precision Determination of Lattice Constants and Structural Characterization of Inn Thin Films

Growth temperature induced physical property variation of InN films grown on nitrided sapphire substrate by PAMBE

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

InN Films Grown on 6H-SiC by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

Growth of A-Plane Inn on R-Plane Sapphire with A Gan Buffer by Molecular-Beam Epitaxy

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Growth-dependent Phonon Characteristics in InN Thin Films

In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxy

Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE

Depth Dependence of Structural Quality in InN Grown by Metalorganic Chemical Vapor Deposition

Growth of InGaN Films on C-Plane Sapphire Substrates with an AlN Nucleation Layer by Using Metal-Organic Chemical-Vapor Deposition

MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison Between N-polarity and In-polarity Growth Processes

The Growth Temperatures Dependence of Optical and Electrical Properties of Inn Films

Unintentionally Doped InN Grown Onto an Atomically Flat AlN Intermediate Layer Using Plasma‐assisted Molecular Beam Epitaxy