Abstract:Phase change memory (PCM) is an emerging non‐volatile data storage technology concerned by the semiconductor industry. To improve the performances, previous efforts have mainly focused on partially replacing or doping elements in the flagship Ge‐Sb‐Te (GST) alloy based on experimental "trial‐and‐error" methods. Here, the current largest scale PCM materials searching is reported, starting with 124 515 candidate materials, using a rational high‐throughput screening strategy consisting of criteria related to PCM characteristics. In the results, there are 158 candidates screened for PCM materials, of which ≈68% are not employed. By further analyses, including cohesive energy, bond angle analyses, and Born effective charge, there are 52 materials with properties similar to the GST system, including Ge2Bi2Te5, GeAs4Te7, GeAs2Te4, so on and other candidates that have not been reported, such as TlBiTe2, TlSbTe2, CdPb3Se4, etc. Compared with GST, materials with close cohesive energy include AgBiTe2, TlSbTe2, As2Te3, TlBiTe2, etc., indicating possible low power consumption. Through further melt‐quenching molecular dynamic calculation and structural/electronic analyses, Ge2Bi2Te5, CdPb3Se4, MnBi2Te4, and TlBiTe2 are found suitable for optical/electrical PCM applications, which further verifies the effectiveness of this strategy. The present study will accelerate the exploration and development of advanced PCM materials for current and future big‐data applications.

Three-Dimensional Numerical Simulation of Switching Dynamics for Cylindrical-Shaped Phase Change Memory

Structure Effect of Cylindrical-Shaped GeSbTe Alloy on Phase Transition in Phase Change Memory

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

The geometric effect and programming current reduction in cylindrical-shaped phase change memory

Ta-doped Ge5Sb95 Phase Change Thin Films for High Speed and Low Power Application

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

Dynamic switching characteristic dependence on sidewall angle for phase change memory

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Modeling of the Temperature Profiles and Thermoelectric Effects in Phase Change Memory Cells

Effect of Scaling on Thermal Properties and Switching Operation of Phase Change Memory Devices

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Multi-Physics Modeling Of Phase Change Memory Operations in Ge-rich Ge$_2$Sb$_2$Te$_5$ Alloys

Advantage of Ti-Doped Ge2Sb2Te5 Material for Phase Change Memory Applications

Design for Ultrahigh-Density Vertical Phase Change Memory: Proposal and Numerical Investigation

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

High‐Throughput Screening for Phase‐Change Memory Materials

High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications

Scandium Doped Ge2Sb2Te5 for High-Speed and Low-Power-consumption Phase Change Memory

Atomic insights into device-scale phase-change memory materials using machine learning potential

Atomic Insight into the BEOL Thermal Budget on Phase Transition of Phase Change Memory Cells