Abstract:AbstractStrained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1−xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Impact of Electrical Stress on Defect Generation in Thin GeO2/Ge Gate Stacks Fabricated by Thermal Oxidation

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Defects in Ge-doped Cz-Si Annealed under High Stress

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Electrical Signature of the Defect Associated with Gate Oxide Breakdown

Degradation of Ultra-Thin Gate Oxide Ldd Nmosfet under Gidl Stress

Degradation of Ultra-Thin Gate Oxide Nmosfets under Cvdt and She Stresses

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Localized Breakdown in Dielectrics and Macroscopic Charge Transport Through the Whole Gate Stack: A Comparative Study

Characteristics of Degradation under Gidl Stress in Ultrathin Gate Oxide Ldd Nmosfet'S

Non-uniform distribution of electron traps generated by fowler-nordheim stress in silicon dioxides

Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates

Behaviors of Gate Induced Drain Leakage Stress in Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Identification of Interfacial Defects in a Ge Gate Stack Based on Ozone Passivation

Non-Uniform Distribution of Electron Traps Generated by FN Stress in Silicon Dioxides

Stress induced leakage current and time dependent dielectric breakdown characteristics of ultra-thin HFO2 gate dielectrics

The characteristics of leakage current mechanisms and SILC effects of Al 2 O 3 gate dielectric

Degradation of Nmos and Pmosfets with Ultrathin Gate Oxide under DT Stress

Hot-Carrier Stress Effects on Gidl and Silc in 90nm Ldd-Mosfet with Ultra-Thin Gate Oxide

Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress