Abstract:Topological insulators (TIs) of the Bi2Se3 family exhibit topological phase transition from three dimensional (3D) to two dimensional (2D) TIs in thin films with decreasing thickness. Understanding the driving force of this transition is critical for the applications of TIs in nanodevices. Herein, we investigate the finite-size effects on the bulk band inversion and the structural relaxation effects on the surface states within the Bi2Se3 family via first-principles calculations. Thin films exposing the three lowest-energy surfaces are modeled by 2D slabs with tunable thicknesses. We propose that the thickness dependence of the topological phase originates from electron confinement created by surface cuts. The increase in film thickness then counteracts these confinement effects, resulting in a monotonically decreasing band gap evaluated at the spin−orbit decoupled level. This dependence of the bulk gap on the thickness is found consistent for various surface slabs. We utilize this relationship to predict the required thickness for maintaining the 3D TI phase and 2D surface states. Our findings underscore the importance of electron delocalization in determining the topological phase of TI thin films. In addition, the actual manifestation of topological surface states on the side surfaces is affected significantly by the co-existing dangling bonds produced by surface cuts. Therefore, surface relaxation plays a crucial role in disentangling the trivial and nontrivial surface states.

Robust surface state of intrinsic topological insulator Bi2Te2Se thin films: a first-principles study

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

The rhombohedral Sb2Se3 is also an intrinsic topological insulator

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Atomic Distributions in Topological Insulator Bi$_2$Se$_{3-x}$Te$_x$

A computational investigation of topological insulator Bi2Se3 film

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Understanding the Finite Size and Surface Relaxation Effects on the Surface States of Bi2Se3 Family Topological Insulators

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Intrinsic Topological Insulator Bi 1.5 Sb 0.5 Te 3-x Se x Thin Crystals

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

First-Principles Studies of the Three-Dimensional Strong Topological Insulators Bi2te3, Bi2se3 and Sb2te3

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Electronic Structures and Surface States of the Topological Insulatorbi1−xsbx

Topological phases of topological insulator thin films

Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.

Coherent topological transport on the surface of Bi₂Se₃