MOCVD Growth of GaN on LiAlO2(100) Substrates

Ke Xu,J. Xu,P. Deng,Rongsheng Qiu,Z. Fang

DOI: https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<589::AID-PSSA589>3.0.CO;2-J

1999-11-01

Abstract:GaN was grown on LiAlO2(100) using MOCVD with TMGa as Ga source, ammonia as N source, and H2 as carrier gas. Because of the fairly good lattice match between LiAlO2 and GaN, a strong preferred GaN film with (11-00) orientation could be obtained on LiAlO2(100) even without using buffer layers which was very crucial to using Al2O3 as substrate. In the case without using low-temperature buffer layers, high-quality GaN films can be obtained with FWHM of 530 arcsec, surface roughness of 20 nm (rms), mobility of 98 cm2/Vs, and carrier concentration of 3 × 1018 cm—3 at room temperature. The pretreatment of LiAlO2 substrates in ammonia played an important role in obtaining high-quality GaN. The possible effects of thermal expansion were also commented. Even though much information is still left unknown about GaN growth on LiAlO2 substrates, we can see that γ-LiAlO2 single crystal is a promising substrate.

Materials Science