Abstract:Profuse dendritic-synaptic interconnections among neurons in the neocortex embed intricate logic structures enabling sophisticated decision-making that vastly outperforms any artificial electronic analogues1,2,3. The physical complexity is far beyond existing circuit fabrication technologies: moreover, the network in a brain is dynamically reconfigurable, which provides flexibility and adaptability to changing environments4,5,6. In contrast, state-of-the-art semiconductor logic circuits are based on threshold switches that are hard-wired to perform predefined logic functions. To advance the performance of logic circuits, we are re-imagining fundamental electronic circuit elements by expressing complex logic in nanometre-scale material properties. Here we use voltage-driven conditional logic interconnectivity among five distinct molecular redox states of a metal–organic complex to embed a 'thicket' of decision trees (composed of multiple if-then-else conditional statements) having 71 nodes within a single memristor. The resultant current–voltage characteristic of this molecular memristor (a 'memory resistor', a globally passive resistive-switch circuit element that axiomatically complements the set of capacitor, inductor and resistor) exhibits eight recurrent and history-dependent non-volatile switching transitions between two conductance levels in a single sweep cycle. The identity of each molecular redox state was determined with in situ Raman spectroscopy and confirmed by quantum chemical calculations, revealing the electron transport mechanism. Using simple circuits of only these elements, we experimentally demonstrate dynamically reconfigurable, commutative and non-commutative stateful logic in multivariable decision trees that execute in a single time step and can, for example, be applied as local intelligence in edge computing7,8,9.

Implication Logic Circuit Based on a Graphene Oxide Complementary Resistive Switching Device

Easily Cascaded Memristor-CMOS Hybrid Circuit for High-Efficiency Boolean Logic Implementation

Stateful Logic Operations Implemented with Graphite Resistive Switching Memory

Biomaterial/Organic Heterojunction Based Memristor for Logic Gate Circuit Design, Data Encryption, and Image Reconstruction

Flexible Memristor-Based LUC and Its Network Integration for Boolean Logic Implementation

Design of memristor-based combinational logic circuits

Progress on Memristor-Based Analog Logic Operation

TSSM: Three-State Switchable Memristor Model Based on Ag/TiOx Nanobelt/Ti Configuration

Boolean Logic Gates From A Single Memristor Via Low-Level Sequential Logic

All-atomristor logic gates

A Physics-Oriented Memristor Model with the Coexistence of NDR Effect and RS Memory Behavior for Bio-Inspired Computing

Logic implementation method based on bipolar memristor

Light-Gated Memristor with Integrated Logic and Memory Functions.

Bi 2 O 2 Se-Based Memristor-Aided Logic

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

Three-Dimensional Stateful Material Implication Logic

A Few-Step and Low-Cost Memristor Logic Based on MIG Logic for Frequent-Off Instant-On Circuits in IoT Applications

Memorable Logic Gate Based on Field Effect Oxide Resistive Switching Devices

Decision trees within a molecular memristor

Reprogrammable Logic in Memristive Crossbar for In-Memory Computing

Fast and Reconfigurable Logic Synthesis in Memristor Crossbar Array