Abstract:The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-020-2861-0#ref-CR3">3</a>, thus promising to reduce the energy cost of data-centred computing substantially<a href="/articles/s41586-020-2861-0#ref-CR4">4</a>. Although there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials<a href="/articles/s41586-020-2861-0#ref-CR5">5</a>,<a href="/articles/s41586-020-2861-0#ref-CR6">6</a> such as semiconducting molybdenum disulphide, MoS2, could be promising candidates for such platforms thanks to their exceptional electrical and mechanical properties<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-020-2861-0#ref-CR9">9</a>. Here we report our exploration of large-area MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFETs). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits in which logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and a functionally complete set of operations. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.

All-atomristor logic gates

Biomaterial/Organic Heterojunction Based Memristor for Logic Gate Circuit Design, Data Encryption, and Image Reconstruction

Implication Logic Circuit Based on a Graphene Oxide Complementary Resistive Switching Device

Easily Cascaded Memristor-CMOS Hybrid Circuit for High-Efficiency Boolean Logic Implementation

Design of memristor-based combinational logic circuits

Logic-in-memory based on an atomically thin semiconductor

Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches

Bi 2 O 2 Se-Based Memristor-Aided Logic

Fast and Reconfigurable Logic Synthesis in Memristor Crossbar Array

Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2

Stateful Logic Operations Implemented with Graphite Resistive Switching Memory

Single Memristor Logic Gates: From NOT to a Full Adder

Efficient 16 Boolean Logic and Arithmetic Based on Bipolar Oxide Memristors

Progress on Memristor-Based Analog Logic Operation

Decision trees within a molecular memristor

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Boolean Logic Gates From A Single Memristor Via Low-Level Sequential Logic

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Memorable Logic Gate Based on Field Effect Oxide Resistive Switching Devices

A Few-Step and Low-Cost Memristor Logic Based on MIG Logic for Frequent-Off Instant-On Circuits in IoT Applications

Laser writing of memristive logic gates and crossbar arrays