Stateful Logic Operations Implemented with Graphite Resistive Switching Memory

Lin-Jie Yu,Tian-Yu Wang,Lin Chen,Hao Zhu,Qing-Qing Sun,Shi-Jin Ding,Peng Zhou,David Wei Zhang
DOI: https://doi.org/10.1109/led.2018.2803117
IF: 4.8157
2018-01-01
IEEE Electron Device Letters
Abstract:Memristor-based logic operation has attracted a lot of interest ever since the material implication and NAND logic operations were successfully implemented with several memristive devices. Here, we present a memory device fabricated with graphite membrane, which has a simple two terminal planar structure and high ON/OFF ratio over $10^{2}$ . We use the memory device to establish logic gates, and stateful logic operations were successfully carried out. This letter paves the way for carbon electronics to be used in new computation technology.
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