Controlled Majority-Inverter Graph Logic With Highly Nonlinear, Self-Rectifying Memristor

Run Ni,Ling Yang,Xiao-Di Huang,Sheng-Guang Ren,Tian-Qing Wan,Yi Li,Xiang-Shui Miao
DOI: https://doi.org/10.1109/ted.2021.3106234
IF: 3.1
2021-10-01
IEEE Transactions on Electron Devices
Abstract:In this article, for the first time, self-rectifying memristors are exploited for logic-in-memory computation. We report a Pt/TaOx/Ta memristor with salient self-rectifying bipolar features (104 ON-/ OFF-ratio, 105 rectification ratio, 105 nonlinearity, and ~1 pA leakage current), which could support a large passive crossbar array up to 160 Mb with the premise of 10% read margin. Moreover, we propose and experimentally validate a controlled majority-inverter graph logic method based on the self-rectifying switching behaviors, with advantages in computation complexity. Our work is a step forward toward in-memory computing in high-density or even 3-D memristor architectures.
engineering, electrical & electronic,physics, applied
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