Spontaneous Valley Polarization in a Ferromagnetic Fe(OH) 2 Monolayer

Yushuo Xu,Shuhua Wang,Shiqiang Yu,Xinxin Wang,Baibiao Huang,Ying Dai,Wei Wei

DOI: https://doi.org/10.1021/acs.jpclett.2c03177

2022-12-09

Abstract:J Phys Chem Lett . 2022 Dec 7:11543-11550. doi: 10.1021/acs.jpclett.2c03177. Online ahead of print. NO

chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary

What problem does this paper attempt to address?

Room temperature spontaneous valley polarization in two-dimensional FeClBr monolayer

Rui Li,Jiawei Jiang,Wenbo Mi,Haili Bai

DOI: https://doi.org/10.1039/d1nr04063d

IF: 6.7

2021-01-01

Nanoscale

Abstract:The exchange interaction and spin-orbit coupling effect lead to the valley polarization and the schematic of anomalous valley Hall effect.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Pei Zhao,Ying Dai,Hao Wang,Baibiao Huang,Yandong Ma

DOI: https://doi.org/10.1016/j.chphma.2021.09.006

2022-01-01

ChemPhysMater

Abstract:Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for realizing valleytronic devices. Here, on the basis of first-principles calculations, we show that single-layer FeCl2 exhibits a large spontaneous valley polarization (∼101 meV) arising from the broken time-reversal symmetry and spin-orbital coupling, which can be continuously tuned by varying the direction of magnetic crystalline. By employing the perturbation theory, the underlying physical mechanism is unveiled. Moreover, the coupling between valley degree of freedom and ferromagnetic order could generate a spin- and valley-polarized anomalous Hall current in the presence of the in-plane electric field, facilitating its experimental exploration and practical applications.
Spontaneous valley polarization in two-dimensional organometallic lattices

Rui Peng,Zhonglin He,Qian Wu,Ying Dai,Baibiao Huang,Yandong Ma

DOI: https://doi.org/10.1103/physrevb.104.174411

IF: 3.7

2021-11-09

Physical Review B

Abstract:Two-dimensional (2D) ferrovalley materials that exhibit spontaneous valley polarization are both fundamentally intriguing and practically appealing to be used in valleytronic devices. Usually, the research on 2D ferrovalley materials is mainly focused on inorganic systems, severely suffering from in-plane magnetization. Here, we alternatively show by k·p model analysis and high-throughput first-principles calculations that ideal spontaneous valley polarization is present in 2D organometallic lattice. We explore the design principle for organic 2D ferrovalley materials composed of (quasi-)planer molecules and transition-metal atoms in hexagonal lattice, and identify 12 promising candidates. These systems have a ferromagnetic or antiferromagnetic semiconducting state, and importantly they exhibit robust out-of-plane magnetization. The interplay between spin and valley, together with strong spin-orbit coupling of transition-metal atoms, guarantee the spontaneous valley polarization in these systems, facilitating the anomalous valley Hall effect. Our findings significantly broaden the scientific and technological impact of ferrovalley physics.

physics, condensed matter, applied,materials science, multidisciplinary
Large spontaneous valley polarization and anomalous valley Hall effect in antiferromagnetic monolayer $\mathrm{Fe_2CF_2}$

San-Dong Guo,Liguo Zhang,Yiwen Zhang,Guangzhao Wang

2024-04-22

Abstract:Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultra-high dynamic speed. To achieve spontaneous valley polarization and anomalous valley Hall effect (AVHE) in AFM materials is of great significance for potential applications in spintronics and valleytronics. Here, we predict an A-type AFM monolayer $\mathrm{Fe_2CF_2}$ with large spontaneous valley polarization. Monolayer $\mathrm{Fe_2CF_2}$ has zero Berry curvature in momentum space but non-zero layer-locked hidden Berry curvature in real space, which provides the basic conditions for the realization of AVHE. Because $\mathrm{Fe_2CF_2}$ possesses the combined symmetry ($PT$ symmetry) of spatial inversion ($P$) and time reversal ($T$) symmetry, the spin is degenerate, which prevents the AVHE. An out-of-plane external electric field can be used to produce spin splitting due to the introduction of layer-dependent electrostatic potential, and then layer-locked AVHE can be realized in $\mathrm{Fe_2CF_2}$. Moreover, the spin order of spin splitting can be reversed, when the direction of electric field is reversed. It is proved that the AVHE can be achieved in Janus $\mathrm{Fe_2CFCl}$ without external electric field due to intrinsic built-in electric field. Our works provide an AFM monolayer with excellent properties to realize AVHE.

Materials Science
Coexistence and Coupling of Multiple Ferroic Orders in Van Der Waals Monolayers

Xiaofan Shen,Xiaomei Lu,Fengzhen Huang,Junting Zhang

DOI: https://doi.org/10.1103/physrevb.110.045435

IF: 3.7

2024-01-01

Physical Review B

Abstract:With the successive confirmation of two-dimensional (2D) ferroelectricity and ferromagnetism and the proposal of ferrovalley, the coexistence of multiple ferroic orders in single-phase materials has attracted extensive attention. Here we demonstrate the coexistence and coupling effects of these three ferroic orders in conventional valley material systems by combining first-principles calculations and the symmetry analysis method. We show that, in 2D ferromagnets lacking inversion symmetry, spin-orbit coupling causes spin direction-dependent ferroelectricity through the p-d hybridization mechanism. The magnitude of spin-induced polarization can be significantly improved by increasing the atomic number of the anion, and the Janus monolayer exhibit an additional in-plane polarization component with respect to its parent structure when the spin deviates from being in plane. Ferrovalley and the resulting anomalous Hall effect depend on the out-of-plane spin component. This work contributes to the design of 2D room-temperature multiferroics with intrinsic magnetoelectric coupling.
Spin–valley splitting and spontaneous valley polarization in antiferromagnetic Mn2P2X3Y3 monolayers

Yushuo Xu,Hongling Liu,Ying Dai,Baibiao Huang,Wei Wei

DOI: https://doi.org/10.1063/5.0146469

IF: 4

2023-06-12

Applied Physics Letters

Abstract:In the current stage, valley-contrasting physics is mainly rooted in nonmagnetic and/or ferromagnetic hexagonal lattices and is rarely used to observe the simultaneous spin and valley polarization in antiferromagnetic materials. In this work, we propose a general scheme that can be achieved easily in experiments to break the PT joint symmetry of antiferromagnetic structures, that is, introducing an out-of-plane potential gradient to realize spin–valley splitting and spontaneous valley polarization. In combination of the model analysis and first-principles calculations, we translate the concept into Mn2P2X3Y3 monolayers and clarify the valley-related physics. It is obvious that our finding significantly extends the scope of valleytronics in both theory and experiments.

physics, applied
Ferrovalley Physics in Stacked Bilayer Altermagnetic Systems

Yun-Qin Li,Yu-Ke Zhang,Xin-Le Lu,Ya-Ping Shao,Zhi-qiang Bao,Jun-Ding Zheng,Wen-Yi Tong,Chun-Gang Duan

2024-10-04

Abstract:As an emerging magnetic phase, altermagnets with compensated magnetic order and non-relativistic spin-splitting have attracted widespread attention. Currently, strain engineering is considered to be an effective method for inducing valley polarization in altermagnets, however, achieving controllable switching of valley polarization is extremely challenging. Herein, combined with tight-binding model and first-principles calculations, we propose that interlayer sliding can be used to successfully induce and effectively manipulate the large valley polarization in altermagnets. Using Fe2MX4 (M = Mo, W; X = S, Se or Te) family as examples, we predict that sliding induced ferrovalley states in such systems can exhibit many unique properties, including the linearly optical dichroism that is independent of spin-orbit coupling, and the anomalous valley Hall effect. These findings imply the correlation among spin, valley, layer and optical degrees of freedom that makes altermagnets attractive in spintronics, valleytronics and even their crossing areas.

Materials Science
Possible Way to Achieve Anomalous Valley Hall Effect by Tunable Intrinsic Piezoelectric Polarization in FeO_2SiGeN_2 Monolayer

Jianke Tian,Jia Li,Hengbo Liu,Yan Li,Ze Liu,Linyang Li,Jun Li,Guodong Liu,Junjie Shi

2024-01-01

Abstract:Valley-related multiple Hall effect and piezoelectric response are novel transport characteristics in low-dimensional system, however few studies have reported their coexistence in a single system as well as their coupling relationships. By first-principles calculations, we propose a multifunctional Janus semiconductor, i.e. FeO_2SiGeN_2 monolayer with large valley polarization of about 120 meV and in-plane piezoelectric polarization with d11 of -0.714.03 pm/V. The magnetic anisotropy energy can be significantly regulated by electronic correlation strength and strain, which can be attributed to the change of competition relationship about Fe-3d-resolved magnetic anisotropy energy brought about by external regulatory means. Electronic correlation strength can induce phase transitions in Janus FeO_2SiGeN_2 monolayer from ferrovalley to quantum anomalous Hall phase, while the half-valley metallic state as the boundary of the phase transition can gererate 100 mechanism is analyzed based on the two-band strained kp model. The presence of piezoelectric strain coefficients d11 in valleytronic material makes the coupling between charge degrees of freedom and valley degrees of freedom possible, and the intrinsic electric field caused by the in-plane piezoelectric response provide the way to realize piezoelectric anomalous valley Hall effect. This work may pave a way to find a new member of materials with valley-related multiple Hall effect and stimulate further experimental works related to valleytronics and piezotronics.
Spontaneous Polarization Dynamics in V-doped Monolayer MoS2

Jinhong Xu,Qijing Zheng,Jin Zhao

DOI: https://doi.org/10.1016/j.commt.2024.100004

2024-01-01

Abstract:Valleytronics has drawn attention both for its fundamental aspects and potential applications in device technology. Lifting the valley degeneracy is an attractive route to achieve stable valley polarization and spontaneous valley polarization. Our first-principles calculations on V-doped monolayer MoS2 reveal a substantial permanent valley splitting of 174meV, driven by the combined effects of spin-orbit coupling (SOC) and magnetic coupling with the doped atom. Non-adiabatic molecular dynamics simulations show that the spontaneous valley polarization dynamics depends on the SOC, electron-phonon (e-ph) coupling and the scattering with the impurity, and it varies notably with different initial spin orientations of excited holes. For spin-up holes, the process involves e-ph scattering and spin-flip induced by spinor-phonon scattering over several picoseconds. On the other hand, spin-down hole excitation leads to spontaneous polarization through e-ph and impurity scattering on a timescale shorter by an order of magnitude. This study provides insights into the distinct valley polarization dynamics of carriers with different spins, contributing to the design of ultrafast valleytronic and spintronic devices.
Possible way to achieve anomalous valley Hall effect by tunable intrinsic piezoelectric polarization in FeO$_2$SiGeN$_2$ monolayer

Jianke Tian,Jia Li,Hengbo Liu,Yan Li,Ze Liu,Linyang Li,Jun Li,Guodong Liu,Junjie Shi

2024-10-21

Abstract:Valley-related multiple Hall effect and piezoelectric response are novel transport characteristics in low-dimensional system, however few studies have reported their coexistence in a single system as well as their coupling relationships. By first-principles calculations, we propose a multifunctional Janus semiconductor, i.e. FeO$_2$SiGeN$_2$ monolayer with large valley polarization of about 120 meV and in-plane piezoelectric polarization with d11 of -0.714.03 pm/V. The magnetic anisotropy energy can be significantly regulated by electronic correlation strength and strain, which can be attributed to the change of competition relationship about Fe-3d-resolved magnetic anisotropy energy brought about by external regulatory means. Electronic correlation strength can induce phase transitions in Janus FeO$_2$SiGeN$_2$ monolayer from ferrovalley to quantum anomalous Hall phase, while the half-valley metallic state as the boundary of the phase transition can gererate 100% spin- and valley polarization. The related phase transition mechanism is analyzed based on the two-band strained kp model. The presence of piezoelectric strain coefficients d11 in valleytronic material makes the coupling between charge degrees of freedom and valley degrees of freedom possible, and the intrinsic electric field caused by the in-plane piezoelectric response provide the way to realize piezoelectric anomalous valley Hall effect. This work may pave a way to find a new member of materials with valley-related multiple Hall effect and stimulate further experimental works related to valleytronics and piezotronics.

Mesoscale and Nanoscale Physics,Materials Science
Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Ningbo Li,Jiayong Zhang,Yang Xue,Tong Zhou,Zhongqin Yang

DOI: https://doi.org/10.1039/c7cp07610j

IF: 3.3

2018-01-01

Physical Chemistry Chemical Physics

Abstract:On the basis of valley degree of freedom, there would be immense potential application in valleytronics. Introducing magnetism into triangular or hexagonal lattices is a promising route to realize valley polarization, which is indispensable for applying the valley degree of freedom. In this study, we explored valley polarization by depositing a heterostructure of a MoTe2 monolayer on the (0 0 1) surface of an antiferromagnetic RbMnCl3 substrate. First principles-calculations showed that due to proximity-induced Zeeman effects, the MoTe2 monolayer was drastically magnetized by the topmost Mn layer in the substrate and a very large valley splitting (about 109 meV) was achieved. Using an effective Hamiltonian model, the effect of the competition of the spin-orbit coupling (SOC) and exchange field in the system on the valley polarization was also investigated. The magnitude of the valley splitting was found to be limited by the smaller SOC value and the induced exchange field, providing information on the enhancement of the valley polarization. A device rudiment with an anomalous valley Hall effect is proposed.
Tunable valley polarization effect and second-order topological state in monolayer FeClSH

Mengteng Chen,Xiangru Kong,Xiao Xie,Xiaobiao Liu,Jia Li,François M. Peeters,Linyang Li

DOI: https://doi.org/10.1039/d3cp05127g

IF: 3.3

2023-12-30

Physical Chemistry Chemical Physics

Abstract:In two-dimensional (2D) materials, breaking the inversion symmetry plays an important role in valleytronics. Ferrovalley (FV) materials can achieve spontaneous valley polarization (VP) without additional modulation due to the magnetic exchange interaction and strong spin-orbit coupling. Using first-principles calculations, we predict a new 2D material, Janus FeClSH, which exhibits a large spontaneous VP. This monolayer is a perfect FV material, where the valence band maximum and conduction band minimum are located at K/K' point. A large VP of 102.95 meV is spontaneously generated for the case of out-of-plane magnetization. Additionally, we propose that the irradiating circularly polarized light can be used to realize VP for the case of in-plane magnetization. Remarkably, a triangular nanoflake of FeClSH with armchair edges can show nontrivial corner states, exhibiting a second-order topological insulator (SOTI) state. The VP effect and SOTI state are tunable with the Hubbard U parameter, making the FeClSH monolayer promising for the study of the coupling between VP and SOTI.

chemistry, physical,physics, atomic, molecular & chemical
Tunable Ferroelectricity And Antiferromagnetism Via Ferroelastic Switching In An Feooh Monolayer

Xukun Feng,Xikui Ma,Lei Sun,Jian Liu,Mingwen Zhao

DOI: https://doi.org/10.1039/d0tc04400h

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:The exotic effects arising from the interplay between ferroic states in two-dimensional (2D) materials are arousing increasing interest. Using first-principles calculations, we demonstrate the coexistence of three ferroic scenarios: ferroelectric (FE), antiferromagnetic (AFM) and ferroelastic (FA) states in an experimentally-accessible hydroxyl oxidized iron (FeOOH) monolayer. The unique hydrogen-bond network leads to in-plane spontaneous FE polarization with a magnitude of 77.5 pC m(-1). The magnetic moments of the spin-polarized Fe ions prefer an AFM ordering with a Neel temperature of 126 K and the easy magnetization axis parallel to the electric polarization direction. Meanwhile, the FeOOH monolayer exhibits prominent ferroelasticity with a large reversible FA strain of 23.6% and a moderate switching energy barrier (0.135 eV per atom), enabling a switchable easy magnetization axis and spontaneous electrical polarization. The multiferroic properties of the FeOOH monolayer not only offer a promising platform for the study of multi-ferroic effects, such as electroelastic and magnetoelastic effects, but also bring about new concepts for next-generation nonvolatile memory devices and multi-stage storage.
2D spontaneous valley polarization from inversion symmetric single-layer lattices

Ting Zhang,Xilong Xu,Baibiao Huang,Ying Dai,Yandong Ma

DOI: https://doi.org/10.1038/s41524-022-00748-0

IF: 12.256

2022-04-11

npj Computational Materials

Abstract:Abstract 2D spontaneous valley polarization attracts great interest both for its fundamental physics and for its potential applications in advanced information technology, but it can only be obtained from inversion asymmetric single-layer crystals, while the possibility to create 2D spontaneous valley polarization from inversion symmetric single-layer lattices remains unknown. Here, starting from inversion symmetric single-layer lattices, a general design principle for realizing 2D spontaneous valley polarization based on van der Waals interaction is mapped out. Using first-principles calculations, we further demonstrate the feasibility of this design principle in a real material of T-FeCl 2 . More remarkably, such design principle exhibits the additional exotic out-of-plane ferroelectricity, which could manifest many distinctive properties, for example, ferroelectricity-valley coupling and magnetoelectric coupling. The explored design-guideline and phenomena are applicable to a vast family of 2D materials. Our work not only opens up a platform for 2D valleytronic research but also promises the fundamental research of coupling physics in 2D lattices.

materials science, multidisciplinary,chemistry, physical
Large Valley Polarization and the Valley-Dependent Hall Effect in a Janus TiTeBr Monolayer

Bingwen Su,Xiao Peng,Zhibo Yan,Lin,Xiaokun Huang,Jun-Ming Liu

DOI: https://doi.org/10.1039/d4cp00318g

IF: 3.3

2024-01-01

Physical Chemistry Chemical Physics

Abstract:Ferrovalley materials hold great promise for implementation of logic and memory devices in valleytronics. However, there have so far been limited ferrovalley materials exhibiting significant valley polarization and high Curie temperature (TC). Using first-principles calculations, we predict that the TiTeBr monolayer is a promising ferrovalley candidate. It exhibits intrinsic ferromagnetism with TC as high as 220 K. It is indicated that an out-of-plane alignment of magnetization demonstrates a valley polarization up to 113 meV in the topmost valence band, as further verified by perturbation theory considering both the spin polarization and spin-orbit coupling. Under an in-plane electric field, the valley-dependent Berry curvature results in the anomalous valley Hall effect (AVHE). Moreover, under a suitable in-plane biaxial strain, the TiTeBr monolayer transforms into a Chern insulator with a nonzero Chern number, yet retains its ferrovalley characters and thus the emergent quantum anomalous valley Hall effect (QAVHE). Our study indicates that the TiTeBr monolayer is a promising ferrovalley material, and it provides a platform for investigating the valley-dependent Hall effect. Utilizing first-principles calculations, we predict that the Janus TiTeBr monolayer is a candidate ferrovalley material, demonstrating a large valley polarization and exhibiting the strain-induced topological phase transition.
Linear dichroism and polarization controllable persistent spin helix in two-dimensional ferroelectric ZrOI2 monolayer

Niuzhuang Yang,Gaoyang Gou,Xiaoli Lu,Yue Hao

DOI: https://doi.org/10.1007/s12274-022-4206-9

IF: 9.9

2022-04-08

Nano Research

Abstract:Two-dimensional ferroelectric (2D-FE) materials that characterize the spontaneous ferroelectricity down to monolayer limit and rich ferroic properties arising from FE orderings, have been extensively explored as low-dimensional sensor, electric and memory devices. In current work, group-IV transition metal oxide dihalide MOX2 (M = Zr and Hf, X = Cl, Br and I) monolayers have been identified as a new group of 2D-FE materials. Using the comprehensive first-principles calculations combined with finite temperature Monte Carlo (MC) and ab initio molecular dynamics (MD) simulations, we investigate the temperature stability of FE polarization and further uncover the unique properties associated with spontaneous ferroelectricity of MOX2 monolayers. In particular, ZrOI2 monolayer, a promising 2D-FE material with room temperature stable ferroelectricity, semiconducting electronic structure and optoelectronic response under visible light, offers an ideal material platform to investigate the coupling of intrinsic anisotropy, optical absorption selectivity and spin degree of freedom with 2D ferroelectricity. Typically, significant optical absorption anisotropy and giant linear dichroism effect are predicted for a 2D optical polarizer device based on ZrOI2 monolayer, where the adsorption of incident monochromatic linearly polarized light (hv = 3.23 eV) along two planar directions with a nearly 100% optical selectivity can be achieved. Moreover, the spin—orbit coupling (SOC) induced spin splitting of valence band edges and out-of-plane textured spin configuration occur in ZrOI2 monolayer. In the meanwhile, the unidirectional spin-orbit field protected by C2v wave-vector point group can further create the persistent spin helix (PSH) state, leading to the extraordinarily long spin carrier lifetime. More importantly, the nonvolatile control of PSH state via the electric field induced polarization reversal has also been demonstrated for FE-ZrOI2 monolayer, which manifests as a great advantage for applications of ZrOI2 as the low-dimensional spin-field effect transistor and all-electric spintronics devices.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Controllable dual-polarization valley physics in the strain-engineered 2D monolayer of VC 2 N 4

Chengan Lei,Shiyu Cao,Zelong Gong,Xinru Li,Yandong Ma,Jian Gao,Jianqiang Bi,Rajeev Ahuja,Zhao Qian

DOI: https://doi.org/10.1039/d3tc04255c

IF: 6.4

2024-01-01

Journal of Materials Chemistry C

Abstract:The intrinsic dual-polarization valley feature in bipolar ferromagnetic monolayer VC 2 N 4 is identified.

materials science, multidisciplinary,physics, applied
Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Chun-Wen Chan,Chia-Yun Hsieh,Fang-Mei Chan,Pin-Jia Huang,Chao-Yao Yang

DOI: https://doi.org/10.3390/ma17163933

2024-08-08

Abstract:Transition metal dichalcogenide (TMD) monolayers exhibit unique valleytronics properties due to the dependency of the coupled valley and spin state at the hexagonal corner of the first Brillouin zone. Precisely controlling valley spin-polarization via manipulating the electron population enables its application in valley-based memory or quantum technologies. This study uncovered the uncompensated spins of the antiferromagnetic nickel oxide (NiO) serving as the ferromagnetic (FM) order to induce valley spin-polarization in molybdenum disulfide (MoS2) monolayers via the magnetic proximity effect (MPE). Spin-resolved photoluminescence spectroscopy (SR-PL) was employed to observe MoS2, where the spin-polarized trions appear to be responsible for the MPE, leading to a valley magnetism. Results indicate that local FM order from the uncompensated surface of NiO could successfully induce significant valley spin-polarization in MoS2 with the depolarization temperature approximately at 100 K, which is relatively high compared to the related literature. This study reveals new perspectives in that the precise control over the surface orientation of AFMs serves as a crystallographic switch to activate the MPE and the magnetic sustainability of the trion state is responsible for the observed valley spin-polarization with the increasing temperature, which promotes the potential of AFM materials in the field of exchange-coupled Van der Waals heterostructures.
Valley polarization in 2D tetragonal altermagnetism

San-Dong Guo Xiao-Shu Guo,Guangzhao Wang

2024-09-23

Abstract:The altermagnetism caused by alternating crystal environment provides a unique opportunity for designing new type of valley polarization. Here, we propose a way to realize valley polarization in two-dimensional (2D) tetragonal altermagnetism by regulating the direction of magnetization. The valley polarization along with spin polarization will arise when the orientation of magnetization breaks the $C_{4z}$ lattice rotational symmetry, particularly in the conventional in-plane $x$ or $y$ directions. When the direction of magnetization switches between the $x$ and $y$ direction, the valley and spin polarizations will be reversed. This is different from the widely studied valley polarization, which occurs in out-of-plane hexagonal magnetic materials with valley physics at -K/K point. Followed by first-principles calculations, our proposal is demonstrated in a 2D Janus tetragonal altermagnetic $\mathrm{Fe_2MoS_2Se_2}$ monolayer with good stability but very small valley splitting of 1.6 meV. To clearly see the feasibility of our proposal, an unrealistic material $\mathrm{Ru_2MoS_2Se_2}$ is used to show large valley splitting of 90 meV. In fact, our proposal can be readily extended to 2D tetragonal ferromagnetic (FM) materials, for example FM $\mathrm{Fe_2I_2}$ monolayer. Our findings can enrich the valley physics, and provide new type of valley materials.

Materials Science
Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Huisheng Zhang,Wenjia Yang,Yaohui Ning,Xiaohong Xu

DOI: https://doi.org/10.1103/physrevb.101.205404

2020-01-01

Abstract:Manipulating the valley degree of freedom provides a novel paradigm for future valleytronics. Here we use first-principles approaches and the kp model analyses to carry out a comparative study of ten van der Waals (vdW) heterostructures constructed by transition-metal dichalcogenides and recently discovered twodimensional (2D) ferromagnetic (FM) insulators. Our calculations show that the MoTe2/CrBr3 heterostructure hosts a large valley splitting of similar to 28.7meV, which is much larger than that observed in the WSe2/CrI3 heterostructure (similar to 3.5meV). Specifically, the spin-orbital coupling can induce band inversions in WSe2/CrBr3 andMoTe(2)/CrBr3 heterostructures due to strong charge transfer across the interfaces of these two systems. Most strikingly, WSe2/CrBr3 is characterized as a valley-polarized quantum anomalous Hall effect system with Chern number C = -1 at the K point while C = 0 at the K' point. All those findings together with recent progress in 2D FM insulators point out an experimentally achievable scheme for exploration of abundant valley-polarized states in 2D FM vdW heterostructures.

Spontaneous Valley Polarization in a Ferromagnetic Fe(OH) 2 Monolayer

Room temperature spontaneous valley polarization in two-dimensional FeClBr monolayer

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Spontaneous valley polarization in two-dimensional organometallic lattices

Large spontaneous valley polarization and anomalous valley Hall effect in antiferromagnetic monolayer $\mathrm{Fe_2CF_2}$

Coexistence and Coupling of Multiple Ferroic Orders in Van Der Waals Monolayers

Spin–valley splitting and spontaneous valley polarization in antiferromagnetic Mn2P2X3Y3 monolayers

Ferrovalley Physics in Stacked Bilayer Altermagnetic Systems

Possible Way to Achieve Anomalous Valley Hall Effect by Tunable Intrinsic Piezoelectric Polarization in FeO_2SiGeN_2 Monolayer

Spontaneous Polarization Dynamics in V-doped Monolayer MoS2

Possible way to achieve anomalous valley Hall effect by tunable intrinsic piezoelectric polarization in FeO$_2$SiGeN$_2$ monolayer

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Tunable valley polarization effect and second-order topological state in monolayer FeClSH

Tunable Ferroelectricity And Antiferromagnetism Via Ferroelastic Switching In An Feooh Monolayer

2D spontaneous valley polarization from inversion symmetric single-layer lattices

Large Valley Polarization and the Valley-Dependent Hall Effect in a Janus TiTeBr Monolayer

Linear dichroism and polarization controllable persistent spin helix in two-dimensional ferroelectric ZrOI2 monolayer

Controllable dual-polarization valley physics in the strain-engineered 2D monolayer of VC 2 N 4

Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Valley polarization in 2D tetragonal altermagnetism

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures