Room temperature spontaneous valley polarization in two-dimensional FeClBr monolayer

Rui Li,Jiawei Jiang,Wenbo Mi,Haili Bai

DOI: https://doi.org/10.1039/d1nr04063d

IF: 6.7

2021-01-01

Nanoscale

Abstract:The exchange interaction and spin-orbit coupling effect lead to the valley polarization and the schematic of anomalous valley Hall effect.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Pei Zhao,Ying Dai,Hao Wang,Baibiao Huang,Yandong Ma

DOI: https://doi.org/10.1016/j.chphma.2021.09.006

2022-01-01

ChemPhysMater

Abstract:Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for realizing valleytronic devices. Here, on the basis of first-principles calculations, we show that single-layer FeCl2 exhibits a large spontaneous valley polarization (∼101 meV) arising from the broken time-reversal symmetry and spin-orbital coupling, which can be continuously tuned by varying the direction of magnetic crystalline. By employing the perturbation theory, the underlying physical mechanism is unveiled. Moreover, the coupling between valley degree of freedom and ferromagnetic order could generate a spin- and valley-polarized anomalous Hall current in the presence of the in-plane electric field, facilitating its experimental exploration and practical applications.
Spontaneous Valley Polarization in a Ferromagnetic Fe(OH) 2 Monolayer

Yushuo Xu,Shuhua Wang,Shiqiang Yu,Xinxin Wang,Baibiao Huang,Ying Dai,Wei Wei

DOI: https://doi.org/10.1021/acs.jpclett.2c03177

2022-12-09

Abstract:J Phys Chem Lett . 2022 Dec 7:11543-11550. doi: 10.1021/acs.jpclett.2c03177. Online ahead of print. NO

chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary
Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

LeYi Zhao,Hai Wang,TianYu Liu,FangFei Li,Qiang Zhou,HaiYu Wang

DOI: https://doi.org/10.1007/s11431-022-2414-5

2024-01-01

Abstract:Monolayer transition metal dichalcogenides (TMDCs) have become a promising platform in valleytronics due to possessing the regulatable valley degrees of freedom. While, as a result of the rapid intervalley scattering, it is difficult to measure the PL valley polarization of monolayer TMDCs at room temperature, which limits their application in valleytronics devices. Here, we report a room temperature photoluminescence (PL) valley polarization up to 3.73% in an “optical bilayer” WS 2 formed by transferring monolayer WS 2 onto flat Ag film. Furthermore, in the transient absorption (TA) measurements, a remarkably long valley depolarization lifetime is found. Thus, we demonstrate the valley properties of such “optical bilayer” WS 2 resemble actual bilayer WS 2 , in which the robust valley polarization can be attributed to the phonons depletion effect and the blocked interlayer hopping processes. These peculiar valley features in “optical bilayer” WS 2 provide a particularly simple method to enhance valley control at room temperature.
Electronic correlation-driven quantum anomalous valley Hall effect in intrinsic ferrovalley FeClBr

Xuebing Peng,Baorui Xia,Mingsu Si,Daqiang Gao

DOI: https://doi.org/10.1063/5.0207610

IF: 4

2024-05-27

Applied Physics Letters

Abstract:Both ferrovalley and quantum anomalous valley Hall effect (QAVHE) are practically desirable and inherently fascinating for new-style device applications. However, works realizing the intrinsic ferrovalley and QAVHE in a single ferromagnetic system with a high Curie temperature are still lacking. We predict that monolayer FeClBr exhibits the ferrovalley phase with a substantial valley polarization of 116 meV and high Curie temperature of approximately 565 K. When considering electronic correlation effects, within the range of Ueff = 0.87 eV and Ueff = 1.13 eV, the QAVHE of nontrivial topology is present. A Chern number of C = −1 is confirmed by chiral edge states and an anomalous Hall conductivity. Intriguingly, the emergence of out-of-plane easy magnetization when Ueff < 1.13 eV is conducive to realizing the intrinsic ferrovalley and QAVHE. The QAVHE is also present in monolayers of FeClI and FeBrI. Our study offers potential candidate materials for the advancement of multifunctional quantum devices in topology and valleytronics.

physics, applied
Large spontaneous valley polarization and anomalous valley Hall effect in antiferromagnetic monolayer $\mathrm{Fe_2CF_2}$

San-Dong Guo,Liguo Zhang,Yiwen Zhang,Guangzhao Wang

2024-04-22

Abstract:Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultra-high dynamic speed. To achieve spontaneous valley polarization and anomalous valley Hall effect (AVHE) in AFM materials is of great significance for potential applications in spintronics and valleytronics. Here, we predict an A-type AFM monolayer $\mathrm{Fe_2CF_2}$ with large spontaneous valley polarization. Monolayer $\mathrm{Fe_2CF_2}$ has zero Berry curvature in momentum space but non-zero layer-locked hidden Berry curvature in real space, which provides the basic conditions for the realization of AVHE. Because $\mathrm{Fe_2CF_2}$ possesses the combined symmetry ($PT$ symmetry) of spatial inversion ($P$) and time reversal ($T$) symmetry, the spin is degenerate, which prevents the AVHE. An out-of-plane external electric field can be used to produce spin splitting due to the introduction of layer-dependent electrostatic potential, and then layer-locked AVHE can be realized in $\mathrm{Fe_2CF_2}$. Moreover, the spin order of spin splitting can be reversed, when the direction of electric field is reversed. It is proved that the AVHE can be achieved in Janus $\mathrm{Fe_2CFCl}$ without external electric field due to intrinsic built-in electric field. Our works provide an AFM monolayer with excellent properties to realize AVHE.

Materials Science
Large Valley Polarization and the Valley-Dependent Hall Effect in a Janus TiTeBr Monolayer

Bingwen Su,Xiao Peng,Zhibo Yan,Lin,Xiaokun Huang,Jun-Ming Liu

DOI: https://doi.org/10.1039/d4cp00318g

IF: 3.3

2024-01-01

Physical Chemistry Chemical Physics

Abstract:Ferrovalley materials hold great promise for implementation of logic and memory devices in valleytronics. However, there have so far been limited ferrovalley materials exhibiting significant valley polarization and high Curie temperature (TC). Using first-principles calculations, we predict that the TiTeBr monolayer is a promising ferrovalley candidate. It exhibits intrinsic ferromagnetism with TC as high as 220 K. It is indicated that an out-of-plane alignment of magnetization demonstrates a valley polarization up to 113 meV in the topmost valence band, as further verified by perturbation theory considering both the spin polarization and spin-orbit coupling. Under an in-plane electric field, the valley-dependent Berry curvature results in the anomalous valley Hall effect (AVHE). Moreover, under a suitable in-plane biaxial strain, the TiTeBr monolayer transforms into a Chern insulator with a nonzero Chern number, yet retains its ferrovalley characters and thus the emergent quantum anomalous valley Hall effect (QAVHE). Our study indicates that the TiTeBr monolayer is a promising ferrovalley material, and it provides a platform for investigating the valley-dependent Hall effect. Utilizing first-principles calculations, we predict that the Janus TiTeBr monolayer is a candidate ferrovalley material, demonstrating a large valley polarization and exhibiting the strain-induced topological phase transition.
Valley Physics and Anomalous Valley Hall Effect in Single-Layer H -MNX (M = Ti, Zr, Hf; X = Cl, Br)

Pei Zhao,Yan Liang,Yandong Ma,Thomas Frauenheim

DOI: https://doi.org/10.1103/physrevb.107.035416

IF: 3.7

2023-01-01

Physical Review B

Abstract:Recently, the valley degree of freedom of electrons in two-dimensional materials has been attracting growing attention as an information carrier. Here, on the basis of first-principles calculations, we propose a series of unique 2D valleytronic materials in single-layer h-MNX (M=Ti, Zr; Hf, X=Cl, Br) and systematically investigate their valleytronic properties. The underlying valley-contrasting physics including valley spin splitting and valley-dependent optical selection rules in single-layer h-MNX is unveiled. Moreover, we find that the intriguing valley polarization in single-layer h-MNX can be achieved through both circularly polarized light and a ferromagnetic substrate. The substrate-induced valley polarization in SL h-MNX is stacking dependent and can be enhanced by decreasing the interlayer distance. Our findings thus provide a tantalizing platform for operating the valley index in two-dimensional materials.
Intrinsic valley polarization and anomalous valley Hall effect in monolayer H -ScAt 2

Yingzhi Ye,Xiaolei Song,Zhanhui Yuan,Jun Wang,Bingwen Zhang

DOI: https://doi.org/10.1016/j.physe.2023.115879

2024-03-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:Materials with spontaneous polarization is very promising in valley electronics because of its potential application in encoding and storing information. In this paper, we proposed a stable two-dimensional ferromagnetic valley material H -ScAt 2 which can spontaneously generate valley splitting and exhibit intrinsic anomalous Hall effect. The valley polarization is 0.245 eV, which is large than most of the reported materials. The structural stability is verified by our phonon and molecular dynamic calculation. The Curie temperature of H -ScAt 2 monolayer is about 840 K, which is above room temperature.

physics, condensed matter,nanoscience & nanotechnology
Tunable valley polarization effect and second-order topological state in monolayer FeClSH

Mengteng Chen,Xiangru Kong,Xiao Xie,Xiaobiao Liu,Jia Li,François M. Peeters,Linyang Li

DOI: https://doi.org/10.1039/d3cp05127g

IF: 3.3

2023-12-30

Physical Chemistry Chemical Physics

Abstract:In two-dimensional (2D) materials, breaking the inversion symmetry plays an important role in valleytronics. Ferrovalley (FV) materials can achieve spontaneous valley polarization (VP) without additional modulation due to the magnetic exchange interaction and strong spin-orbit coupling. Using first-principles calculations, we predict a new 2D material, Janus FeClSH, which exhibits a large spontaneous VP. This monolayer is a perfect FV material, where the valence band maximum and conduction band minimum are located at K/K' point. A large VP of 102.95 meV is spontaneously generated for the case of out-of-plane magnetization. Additionally, we propose that the irradiating circularly polarized light can be used to realize VP for the case of in-plane magnetization. Remarkably, a triangular nanoflake of FeClSH with armchair edges can show nontrivial corner states, exhibiting a second-order topological insulator (SOTI) state. The VP effect and SOTI state are tunable with the Hubbard U parameter, making the FeClSH monolayer promising for the study of the coupling between VP and SOTI.

chemistry, physical,physics, atomic, molecular & chemical
Room temperature interlayer exciton valley polarization and valley Hall effect

Zumeng Huang,Yuanda Liu,Kévin Dini,Zhuojun Liu,Hanlin Fang,Jin Liu,Timothy Liew,Weibo Gao

DOI: https://doi.org/10.48550/arXiv.1904.09718

2019-04-22

Mesoscale and Nanoscale Physics

Abstract:For monolayer transition metal chalcogenides (TMDs), electrons and excitons in different valleys can be driven to opposite directions by the Berry curvature, serving as a valley-dependent effective magnetic field. In addition to monolayer TMDs, Van der Waals heterostructures provide an attractive platform for emerging valley physics and devices with superior physics properties. Interlayer excitons in TMD heterostructures have a long valley lifetime as compared to monolayer intralayer excitons. Here we report an interlayer exciton valley polarization and valley Hall effect in MoS2/WSe2 in room temperature. The separation for excitons with different valley index is observed with polarization-dependent photoluminescence mapping. The exciton separation is perpendicular to their transport directions. The valley Hall effect for indirect excitons is sustained even at room temperature, in contrast with the cryo-temperatures in previous experiments in monolayer TMDs. Room temperature demonstration of the indirect exciton valley polarization and valley Hall effect might open new perspectives for the development of opto-valleytronic devices based on TMD heterostructures.
Anomalous valley Hall effect in electric-potential-difference antiferromagnetic $\mathrm{Cr_2CHCl}$ monolayer

Dun-Cheng Liang,San-Dong Guo,Shaobo Chen

2024-07-24

Abstract:The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley Hall effect (AVHE). Here, we propose to implement AVHE in electric-potential-difference antiferromagnetic $\mathrm{Cr_2CHCl}$ monolayer with excellent stability, where the spontaneous spin-splitting can be induced due to layer-dependent electrostatic potential caused by out-of-plane built-in electric field. From a symmetry perspective, the introduction of Janus structure breaks the combined symmetry ($PT$ symmetry) of spatial inversion ($P$) and time reversal ($T$), which gives rise to spin-splitting. Both unstarined and strained monolayer $\mathrm{Cr_2CHCl}$ possess valley splitting of larger than 51 meV, which is higher than the thermal energy of room temperature (25 meV). The layer-locked Berry curvature gives rise to layer-locked AVHE. Our work reveals a route to achieve AVHE in AFM monolayer with spontaneous spin-splitting.

Materials Science
Spontaneous valley polarization in two-dimensional organometallic lattices

Rui Peng,Zhonglin He,Qian Wu,Ying Dai,Baibiao Huang,Yandong Ma

DOI: https://doi.org/10.1103/physrevb.104.174411

IF: 3.7

2021-11-09

Physical Review B

Abstract:Two-dimensional (2D) ferrovalley materials that exhibit spontaneous valley polarization are both fundamentally intriguing and practically appealing to be used in valleytronic devices. Usually, the research on 2D ferrovalley materials is mainly focused on inorganic systems, severely suffering from in-plane magnetization. Here, we alternatively show by k·p model analysis and high-throughput first-principles calculations that ideal spontaneous valley polarization is present in 2D organometallic lattice. We explore the design principle for organic 2D ferrovalley materials composed of (quasi-)planer molecules and transition-metal atoms in hexagonal lattice, and identify 12 promising candidates. These systems have a ferromagnetic or antiferromagnetic semiconducting state, and importantly they exhibit robust out-of-plane magnetization. The interplay between spin and valley, together with strong spin-orbit coupling of transition-metal atoms, guarantee the spontaneous valley polarization in these systems, facilitating the anomalous valley Hall effect. Our findings significantly broaden the scientific and technological impact of ferrovalley physics.

physics, condensed matter, applied,materials science, multidisciplinary
Possible way to achieve anomalous valley Hall effect by tunable intrinsic piezoelectric polarization in FeO$_2$SiGeN$_2$ monolayer

Jianke Tian,Jia Li,Hengbo Liu,Yan Li,Ze Liu,Linyang Li,Jun Li,Guodong Liu,Junjie Shi

2024-10-21

Abstract:Valley-related multiple Hall effect and piezoelectric response are novel transport characteristics in low-dimensional system, however few studies have reported their coexistence in a single system as well as their coupling relationships. By first-principles calculations, we propose a multifunctional Janus semiconductor, i.e. FeO$_2$SiGeN$_2$ monolayer with large valley polarization of about 120 meV and in-plane piezoelectric polarization with d11 of -0.714.03 pm/V. The magnetic anisotropy energy can be significantly regulated by electronic correlation strength and strain, which can be attributed to the change of competition relationship about Fe-3d-resolved magnetic anisotropy energy brought about by external regulatory means. Electronic correlation strength can induce phase transitions in Janus FeO$_2$SiGeN$_2$ monolayer from ferrovalley to quantum anomalous Hall phase, while the half-valley metallic state as the boundary of the phase transition can gererate 100% spin- and valley polarization. The related phase transition mechanism is analyzed based on the two-band strained kp model. The presence of piezoelectric strain coefficients d11 in valleytronic material makes the coupling between charge degrees of freedom and valley degrees of freedom possible, and the intrinsic electric field caused by the in-plane piezoelectric response provide the way to realize piezoelectric anomalous valley Hall effect. This work may pave a way to find a new member of materials with valley-related multiple Hall effect and stimulate further experimental works related to valleytronics and piezotronics.

Mesoscale and Nanoscale Physics,Materials Science
Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Huisheng Zhang,Wenjia Yang,Yaohui Ning,Xiaohong Xu

DOI: https://doi.org/10.1103/physrevb.101.205404

2020-01-01

Abstract:Manipulating the valley degree of freedom provides a novel paradigm for future valleytronics. Here we use first-principles approaches and the kp model analyses to carry out a comparative study of ten van der Waals (vdW) heterostructures constructed by transition-metal dichalcogenides and recently discovered twodimensional (2D) ferromagnetic (FM) insulators. Our calculations show that the MoTe2/CrBr3 heterostructure hosts a large valley splitting of similar to 28.7meV, which is much larger than that observed in the WSe2/CrI3 heterostructure (similar to 3.5meV). Specifically, the spin-orbital coupling can induce band inversions in WSe2/CrBr3 andMoTe(2)/CrBr3 heterostructures due to strong charge transfer across the interfaces of these two systems. Most strikingly, WSe2/CrBr3 is characterized as a valley-polarized quantum anomalous Hall effect system with Chern number C = -1 at the K point while C = 0 at the K' point. All those findings together with recent progress in 2D FM insulators point out an experimentally achievable scheme for exploration of abundant valley-polarized states in 2D FM vdW heterostructures.
Possible Way to Achieve Anomalous Valley Hall Effect by Tunable Intrinsic Piezoelectric Polarization in FeO_2SiGeN_2 Monolayer

Jianke Tian,Jia Li,Hengbo Liu,Yan Li,Ze Liu,Linyang Li,Jun Li,Guodong Liu,Junjie Shi

2024-01-01

Abstract:Valley-related multiple Hall effect and piezoelectric response are novel transport characteristics in low-dimensional system, however few studies have reported their coexistence in a single system as well as their coupling relationships. By first-principles calculations, we propose a multifunctional Janus semiconductor, i.e. FeO_2SiGeN_2 monolayer with large valley polarization of about 120 meV and in-plane piezoelectric polarization with d11 of -0.714.03 pm/V. The magnetic anisotropy energy can be significantly regulated by electronic correlation strength and strain, which can be attributed to the change of competition relationship about Fe-3d-resolved magnetic anisotropy energy brought about by external regulatory means. Electronic correlation strength can induce phase transitions in Janus FeO_2SiGeN_2 monolayer from ferrovalley to quantum anomalous Hall phase, while the half-valley metallic state as the boundary of the phase transition can gererate 100 mechanism is analyzed based on the two-band strained kp model. The presence of piezoelectric strain coefficients d11 in valleytronic material makes the coupling between charge degrees of freedom and valley degrees of freedom possible, and the intrinsic electric field caused by the in-plane piezoelectric response provide the way to realize piezoelectric anomalous valley Hall effect. This work may pave a way to find a new member of materials with valley-related multiple Hall effect and stimulate further experimental works related to valleytronics and piezotronics.
Ferrovalley and Quantum Anomalous Hall Effect in Janus TiTeCl Monolayer

Yufang Chang,Zhijun Zhang,Li Deng,Yanzhao Wu,Xianmin Zhang

DOI: https://doi.org/10.3390/ma17133331

2024-07-05

Abstract:Ferrovalley materials are garnering significant interest for their potential roles in advancing information processing and enhancing data storage capabilities. This study utilizes first-principles calculations to determine that the Janus monolayer TiTeCl exhibits the properties of a ferrovalley semiconductor. This material demonstrates valley polarization with a notable valley splitting of 80 meV. Additionally, the Berry curvature has been computed across the first Brillouin zone of the monolayer TiTeCl. The research also highlights that topological phase transitions ranging from ferrovalley and half-valley metals to quantum anomalous Hall effect states can occur in monolayer TiTeCl under compressive strains ranging from -1% to 0%. Throughout these strain changes, monolayer TiTeCl maintains its ferromagnetic coupling. These characteristics make monolayer TiTeCl a promising candidate for the development of new valleytronic and topological devices.
Large valley polarization and valley-dependent Hall effect in Janus TiTeBr monolayer

Bingwen Su,Xiao Peng,Zhibo Yan,Lin Lin,Xiaokun Huang,Junming Liu

DOI: https://doi.org/10.1039/d4cp00318g

IF: 3.3

2024-03-19

Physical Chemistry Chemical Physics

Abstract:Ferrovalley materials hold great promise for implementation of logic and memory devices in valleytronics. However, there have so far been limited ferrovalley materials exhibiting significant valley polarization and high Curie temperature (T C ). Using the first-principles calculations, we predict that TiTeBr monolayer is a promising ferrovalley candidate. It exhibits the intrinsic ferromagnetism with T C as high as 220 K. It is indicated that an out-of-plane alignment of the magnetization demonstrates a valley polarization up to 113 meV in the topmost valence band, as further verified by perturbation theory considering both the spin polarization and spin-orbit coupling. Under an in-plane electric field, the valley-dependent Berry curvature results in the anomalous valley Hall effect (AVHE). Moreover, under suitable in-plane biaxial strain, TiTeBr monolayer transforms into a Chern insulator with nonzero Chern number, yet keeping its ferrovalley characters and thus the emergent quantum anomalous valley Hall effect (QAVHE). Our study indicates that TiTeBr monolayer is a promising ferrovalley material, and it provides a platform for investigating valley-dependent Hall effect.

chemistry, physical,physics, atomic, molecular & chemical
Coexistence and Coupling of Multiple Ferroic Orders in Van Der Waals Monolayers

Xiaofan Shen,Xiaomei Lu,Fengzhen Huang,Junting Zhang

DOI: https://doi.org/10.1103/physrevb.110.045435

IF: 3.7

2024-01-01

Physical Review B

Abstract:With the successive confirmation of two-dimensional (2D) ferroelectricity and ferromagnetism and the proposal of ferrovalley, the coexistence of multiple ferroic orders in single-phase materials has attracted extensive attention. Here we demonstrate the coexistence and coupling effects of these three ferroic orders in conventional valley material systems by combining first-principles calculations and the symmetry analysis method. We show that, in 2D ferromagnets lacking inversion symmetry, spin-orbit coupling causes spin direction-dependent ferroelectricity through the p-d hybridization mechanism. The magnitude of spin-induced polarization can be significantly improved by increasing the atomic number of the anion, and the Janus monolayer exhibit an additional in-plane polarization component with respect to its parent structure when the spin deviates from being in plane. Ferrovalley and the resulting anomalous Hall effect depend on the out-of-plane spin component. This work contributes to the design of 2D room-temperature multiferroics with intrinsic magnetoelectric coupling.
Tunable Valley Polarization in a Multiferroic CuCrP<sub>2</sub>Te<sub>6</sub> Monolayer

Xikui Ma,Lei Sun,Jian Liu,Xukun Feng,Weifeng Li,Jifan Hu,Mingwen Zhao

DOI: https://doi.org/10.1002/pssr.202000008

2020-01-01

Abstract:Valleytronic devices in which both the encoding and processing of information are achieved by manipulating electronic valley degrees of freedom are drawing increasing interest. However, materials with sizable intrinsic valley polarization are currently very rare. Using first-principles calculations, a promising 2D multiferroic CuCrP2Te6 monolayer with intrinsic valley and spin polarization is proposed. The valley splitting at the corners of the Brillouin zone (K and K ') with opposite Berry curvatures can be as large as 110.4 meV, which is quite promising for achieving an anomalous valley Hall effect. Moreover, such valley splitting can be tuned through different approaches, such as modulating the spin polarization and electric polarization and external strain. The interplay between valley and multiferroic properties reveled herein offers a unique strategy for the valleytronic device applications.
Concepts of ferrovalley material and anomalous valley Hall effect

Wen-Yi Tong,Shi-Jing Gong,Xiangang Wan,Chun-Gang Duan

DOI: https://doi.org/10.1038/ncomms13612

IF: 16.6

2016-12-01

Nature Communications

Abstract:Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage, as well as electronic, magnetic and optical switches. In analogy to ferroelectric materials with spontaneous charge polarization, or ferromagnetic materials with spontaneous spin polarization, here we introduce a new member of ferroic family, that is, a ferrovalley material with spontaneous valley polarization. Combining a two-band k·p model with first-principles calculations, we show that 2H-VSe2 monolayer, where the spin–orbit coupling coexists with the intrinsic exchange interaction of transition-metal d electrons, is such a room-temperature ferrovalley material. We further predict that such system could demonstrate many distinctive properties, for example, chirality-dependent optical band gap and, more interestingly, anomalous valley Hall effect. On account of the latter, functional devices based on ferrovalley materials, such as valley-based nonvolatile random access memory and valley filter, are contemplated for valleytronic applications.

multidisciplinary sciences

Room temperature spontaneous valley polarization in two-dimensional FeClBr monolayer

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Spontaneous Valley Polarization in a Ferromagnetic Fe(OH) 2 Monolayer

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Electronic correlation-driven quantum anomalous valley Hall effect in intrinsic ferrovalley FeClBr

Large spontaneous valley polarization and anomalous valley Hall effect in antiferromagnetic monolayer $\mathrm{Fe_2CF_2}$

Large Valley Polarization and the Valley-Dependent Hall Effect in a Janus TiTeBr Monolayer

Valley Physics and Anomalous Valley Hall Effect in Single-Layer H -MNX (M = Ti, Zr, Hf; X = Cl, Br)

Intrinsic valley polarization and anomalous valley Hall effect in monolayer H -ScAt 2

Tunable valley polarization effect and second-order topological state in monolayer FeClSH

Room temperature interlayer exciton valley polarization and valley Hall effect

Anomalous valley Hall effect in electric-potential-difference antiferromagnetic $\mathrm{Cr_2CHCl}$ monolayer

Spontaneous valley polarization in two-dimensional organometallic lattices

Possible way to achieve anomalous valley Hall effect by tunable intrinsic piezoelectric polarization in FeO$_2$SiGeN$_2$ monolayer

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Possible Way to Achieve Anomalous Valley Hall Effect by Tunable Intrinsic Piezoelectric Polarization in FeO_2SiGeN_2 Monolayer

Ferrovalley and Quantum Anomalous Hall Effect in Janus TiTeCl Monolayer

Large valley polarization and valley-dependent Hall effect in Janus TiTeBr monolayer

Coexistence and Coupling of Multiple Ferroic Orders in Van Der Waals Monolayers

Tunable Valley Polarization in a Multiferroic CuCrP<sub>2</sub>Te<sub>6</sub> Monolayer

Concepts of ferrovalley material and anomalous valley Hall effect