Controllable dual-polarization valley physics in the strain-engineered 2D monolayer of VC 2 N 4

Chengan Lei,Shiyu Cao,Zelong Gong,Xinru Li,Yandong Ma,Jian Gao,Jianqiang Bi,Rajeev Ahuja,Zhao Qian

DOI: https://doi.org/10.1039/d3tc04255c

IF: 6.4

2024-01-01

Journal of Materials Chemistry C

Abstract:The intrinsic dual-polarization valley feature in bipolar ferromagnetic monolayer VC 2 N 4 is identified.

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

Controllable Valley Polarization and Strain Modulation in 2D 2H-VS2/CuInP2Se6 Heterostructures

Fan Yang,Jing Shang,Liangzhi Kou,Chun Li,Zichen Deng

DOI: https://doi.org/10.3390/nano12142461

2022-07-18

Abstract:Two-dimensional (2D) transition metal dichalcogenides endow individually addressable valleys in momentum space at the K and K' points in the first Brillouin zone due to the breaking of inversion symmetry and the effect of spin-orbit coupling. However, the application of 2H-VS2 monolayer in valleytronics is limited due to the valence band maximum (VBM) located at the Γ point. Here, by involving the 2D ferroelectric (FE) CuInP2Se6 (CIPSe), the ferrovalley polarization, electronic structure, and magnetic properties of 2D 2H-VS2/CIPSe heterostructures with different stacking patterns and FE polarizations have been investigated by using first-principles calculations. It is found that, for the energetically favorable AB-stacking pattern, the valley polarization is preserved when the FE polarization of CIPSe is upwards (CIPSe↑) or downwards (CIPSe↓) with the splitting energies slightly larger or smaller compared with that of the pure 2H-VS2. It is intriguing that, for the FE CIPSe↑ case, the VBM is expected to pass through the Fermi energy level, which can be eventually achieved by applying biaxial strain and thus the valleytronic nature is turned off; however, for the CIPSe↓ situation, the heterostructure basically remains semiconducting even under biaxial strains. Therefore, with the influence of proper strains, the FE polar reversal of CIPSe can be used as a switchable on/off to regulate the valley polarization in VS2. These results not only demonstrate that 2H-VS2/CIPSe heterostructures are promising potential candidates in valleytronics, but also shed some light on developing practical applications of valleytronic technology.
Spontaneous Valley Polarization and Electrical Control of Valley Physics in Single-Layer TcIrGe2S6

Jiangyu Zhao,Ting Zhang,Rui Peng,Ying Dai,Baibiao Huang,Yandong Ma

DOI: https://doi.org/10.1021/acs.jpclett.2c02492

2022-09-22

Abstract:The modulation of valley polarization in one single system is of important fundamental and practical importance in quantum information technology. Here, through the first-principles calculations, we identify single-layer TcIrGe2S6 as a tantalizing candidate for realizing the modulation of valley polarization. Arising from the combination of inversion symmetry breaking and intrinsic magnetic exchange interaction, single-layer TcIrGe2S6 exhibits spontaneous valley polarization. The value of valley polarization in the conduction band is 161 meV, favorable for achieving the intriguing anomalous valley Hall effect. Furthermore, single-layer TcIrGe2S6 possesses ferroelectric order. More remarkably, its ferroelectric and valley physics can be strongly coupled, namely, the valley properties can be switched off and on electrically. These findings not only provide a compelling candidate for two-dimensional valleytronic research but also open a new avenue for modulating valley physics.
Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer

Jun Zhao,Yunxi Qi,Can Yao,Hui Zeng

DOI: https://doi.org/10.1063/5.0188258

IF: 4

2024-02-26

Applied Physics Letters

Abstract:The manipulation of valley-dependent properties in two-dimensional (2D) materials is intriguing for developing valleytronics. Using first-principles calculations, we explore valley-dependent properties of Janus SVGeN2 monolayer and reveal large and tunable valley polarization by tensile strain. The SVGeN2 monolayer possesses excellent stability. Furthermore, strain-driven topological magneto-valley phase transitions are predicted for this monolayer, leading to the valley quantum anomalous Hall (VQAH) phenomenon. The VQAH state, which is featured by the coexistence of complete valley polarization and topological phase, is confirmed by sign reversal of Berry curvature and the nontrivial band topology. The calculated magnetic anisotropy energy indicates that the Janus SVGeN2 monolayer possesses a ferromagnetic ground state and in-plane magnetization. Our investigation provides some physical insights into the strain-driven topological phase transition and manipulation of valley-dependent properties to realize giant valley polarization in the Janus 2D magnet.

physics, applied
Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Kang Jia,Xiao-Jing Dong,Sheng-Shi Li,Wei-Xiao Ji,Chang-Wen Zhang,Shengshi Li,Weixiao Ji,Chang-wen Zhang

DOI: https://doi.org/10.1039/d3nr05643k

IF: 6.7

2024-03-29

Nanoscale

Abstract:It is both conceptually and practically fascinating to explore fundamental researches and practical applications in two-dimensional systems with the tunable abundant valley Hall effect. In this work, based on the first-principles calculations, the tunable abundant valley Hall effect is proved to appear in the Janus monolayer VCGeN4. When the magnetization is along out-of-plane, the VCGeN4 is an intrinsic ferromagnetic semiconductor with valley feature. The intriguing spontaneous valley polarization exists in the VCGeN4 due to the common influence of broken inversion and time-reversal symmetries, which makes it easier to realize the anomalous valley Hall effect. Furthermore, we observe that the valley-nonequilibrium quantum anomalous Hall effect is driven under external strain, which is located between two half-valley-metal states. When reversing the magnetization, the spin flipping makes the position of edge state to change from one valley to another valley, demonstrating an intriguing behavior known as chiral spin-valley locking. Although the easy magnetic axis orientation is along in-plane, we can utilize an external magnetic field to transform the magnetic axis orientation. Moreover, it is found that the valley state, electronic, and magnetic properties can be well regulated by the electric field. Our works explore the mechanism of tunable abundant valley Hall effect by applying external strain and electric field, which provides a perfect platform to investigate the spin, valley, and topology.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Engineering Valley Polarization of Monolayer WS2: A Physical Doping Approach

Shun Feng,Chunxiao Cong,Satoru Konabe,Ding Zhang,Jingzhi Shang,Yu Chen,Chenji Zou,Bingchen Cao,Lishu Wu,Namphung Peimyoo,Baile Zhang,Ting Yu

DOI: https://doi.org/10.1002/smll.201805503

IF: 13.3

2019-01-01

Small

Abstract:The emerging field of valleytronics has boosted intensive interests in investigating and controlling valley polarized light emission of monolayer transition metal dichalcogenides (1L TMDs). However, so far, the effective control of valley polarization degree in monolayer TMDs semiconductors is mostly achieved at liquid helium cryogenic temperature (4.2 K), with the requirements of high magnetic field and on-resonance laser, which are of high cost and unwelcome for applications. To overcome this obstacle, it is depicted that by electrostatic and optical doping, even at temperatures far above liquid helium cryogenic temperature (80 K) and under off-resonance laser excitation, a competitive valley polarization degree of monolayer WS2 can be achieved (more than threefold enhancement). The enhanced polarization is understood by a general doping dependent valley relaxation mechanism, which agrees well with the unified theory of carrier screening effects on intervalley scattering process. These results demonstrate that the tunability corresponds to an effective magnet field of approximate to 10 T at 4.2 K. This work not only serves as a reference to future valleytronic studies based on monolayer TMDs with various external or native carrier densities, but also provides an alternative approach toward enhanced polarization degree, which denotes an essential step toward practical valleytronic applications.
Tunable Valley Polarization in a Multiferroic CuCrP<sub>2</sub>Te<sub>6</sub> Monolayer

Xikui Ma,Lei Sun,Jian Liu,Xukun Feng,Weifeng Li,Jifan Hu,Mingwen Zhao

DOI: https://doi.org/10.1002/pssr.202000008

2020-01-01

Abstract:Valleytronic devices in which both the encoding and processing of information are achieved by manipulating electronic valley degrees of freedom are drawing increasing interest. However, materials with sizable intrinsic valley polarization are currently very rare. Using first-principles calculations, a promising 2D multiferroic CuCrP2Te6 monolayer with intrinsic valley and spin polarization is proposed. The valley splitting at the corners of the Brillouin zone (K and K ') with opposite Berry curvatures can be as large as 110.4 meV, which is quite promising for achieving an anomalous valley Hall effect. Moreover, such valley splitting can be tuned through different approaches, such as modulating the spin polarization and electric polarization and external strain. The interplay between valley and multiferroic properties reveled herein offers a unique strategy for the valleytronic device applications.
Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Pei Zhao,Ying Dai,Hao Wang,Baibiao Huang,Yandong Ma

DOI: https://doi.org/10.1016/j.chphma.2021.09.006

2022-01-01

ChemPhysMater

Abstract:Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for realizing valleytronic devices. Here, on the basis of first-principles calculations, we show that single-layer FeCl2 exhibits a large spontaneous valley polarization (∼101 meV) arising from the broken time-reversal symmetry and spin-orbital coupling, which can be continuously tuned by varying the direction of magnetic crystalline. By employing the perturbation theory, the underlying physical mechanism is unveiled. Moreover, the coupling between valley degree of freedom and ferromagnetic order could generate a spin- and valley-polarized anomalous Hall current in the presence of the in-plane electric field, facilitating its experimental exploration and practical applications.
Tunable valley-selective circular polarization in vdW multilayers consisting of inversion-symmetric monolayers

Xikui Ma,Weifeng Li,Yangyang Li,Xiangdong Liu,Xian Zhao,Mingwen Zhao

DOI: https://doi.org/10.1039/d3tc01439h

IF: 6.4

2023-07-04

Journal of Materials Chemistry C

Abstract:Valley manipulation via valley selective circular dichroism is beneficial for information encoding and processing. The fascinating scenarios arising from the coupling of valleys with other degrees of freedom bring us a new concept for valleytronics. In this work, we propose a design principle for the coupling of a valley with light polarization, a layer degree of freedom and electric polarization in van der Waals (vdW) multilayers consisting of inversion-symmetric monolayers. Taking ZrNBr multilayers as an example, we demonstrate that the valley selective dichroism properties can be regulated by switching the out-of-plane electric polarization via interlayer sliding. The intrinsic electric field induced by the electric polarization leads to the spatial separation of the photo-generated carriers under valley selective circular dichroism effects, which contributes to the valley Hall effect and the layer Hall effect. More interestingly, the spatial separation of carriers can be regulated by both interlayer sliding and light polarization. The coupling of multiple degrees of freedom demonstrated in this work is expected to have potential application in opto-valleytronics.

materials science, multidisciplinary,physics, applied
Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Ningbo Li,Jiayong Zhang,Yang Xue,Tong Zhou,Zhongqin Yang

DOI: https://doi.org/10.1039/c7cp07610j

IF: 3.3

2018-01-01

Physical Chemistry Chemical Physics

Abstract:On the basis of valley degree of freedom, there would be immense potential application in valleytronics. Introducing magnetism into triangular or hexagonal lattices is a promising route to realize valley polarization, which is indispensable for applying the valley degree of freedom. In this study, we explored valley polarization by depositing a heterostructure of a MoTe2 monolayer on the (0 0 1) surface of an antiferromagnetic RbMnCl3 substrate. First principles-calculations showed that due to proximity-induced Zeeman effects, the MoTe2 monolayer was drastically magnetized by the topmost Mn layer in the substrate and a very large valley splitting (about 109 meV) was achieved. Using an effective Hamiltonian model, the effect of the competition of the spin-orbit coupling (SOC) and exchange field in the system on the valley polarization was also investigated. The magnitude of the valley splitting was found to be limited by the smaller SOC value and the induced exchange field, providing information on the enhancement of the valley polarization. A device rudiment with an anomalous valley Hall effect is proposed.
Valleytronics Candidate with Spontaneous Valley Polarization in A-Type Antiferromagnetic MoSi 2 N 4 /MnPS 3 Heterostructure

Xiao-jing Dong,Kang Jia,Wei-xiao Ji,Sheng-shi Li,Chang-Wen Zhang

DOI: https://doi.org/10.1021/acsaelm.2c01681

IF: 4.494

2023-03-23

ACS Applied Electronic Materials

Abstract:Two-dimensional (2D) antiferromagnetic (AFM) heterostructures (HTSs) have broad application prospects since they offer a stray-free field, robustness against magnetic perturbations, and faster spin dynamics, but how to effectively control valley polarization with an AFM substrate is still an issue. Here spin–valley physical coupling in monolayers of MoSi2N4 and AFM MnPS3 is due to spin–orbit coupling and the absence of inversion symmetry, which made broad application prospects of spin and valley in novel 2D materials. Spontaneous valley polarization in MoSi2N4/MnPS3 HTS has been confirmed by using the first-principles calculations and low-energy effective Hamiltonian models. We reveal that its Néel temperature calculated by Monte Carlo simulation is about 340 K above room temperature, which is higher than many 2D AFM materials. The magnetic proximity phenomenon caused by interfacial orbital hybridization is gradually strengthened thanks to the reduction of the distance between the two layers, and valley splitting of the MoSi2N4/MnPS3 HTS is calculated to be Δ K–K′ = 9.15 meV. Our computational results offer a basis for the valley polarization in an intrinsic AFM HTS and a practical approach to design and utilize valleytronics devices.

materials science, multidisciplinary,engineering, electrical & electronic
Valley Physics and Anomalous Valley Hall Effect in Single-Layer H -MNX (M = Ti, Zr, Hf; X = Cl, Br)

Pei Zhao,Yan Liang,Yandong Ma,Thomas Frauenheim

DOI: https://doi.org/10.1103/physrevb.107.035416

IF: 3.7

2023-01-01

Physical Review B

Abstract:Recently, the valley degree of freedom of electrons in two-dimensional materials has been attracting growing attention as an information carrier. Here, on the basis of first-principles calculations, we propose a series of unique 2D valleytronic materials in single-layer h-MNX (M=Ti, Zr; Hf, X=Cl, Br) and systematically investigate their valleytronic properties. The underlying valley-contrasting physics including valley spin splitting and valley-dependent optical selection rules in single-layer h-MNX is unveiled. Moreover, we find that the intriguing valley polarization in single-layer h-MNX can be achieved through both circularly polarized light and a ferromagnetic substrate. The substrate-induced valley polarization in SL h-MNX is stacking dependent and can be enhanced by decreasing the interlayer distance. Our findings thus provide a tantalizing platform for operating the valley index in two-dimensional materials.
Magnetically and electrically controllable valley splittings in MXene monolayers

Huiqian Wang,Li Liang,Xiaohui Wang,Xiaoyu Wang,Xiao Li

2023-07-07

Abstract:The modulation of the valley structure in two-dimensional valley materials is vital in the field of valleytronics. The multiferroicity provides possibility for multiple modulations of the valley, including the magnetic and electric means. Based on the first-principle calculations, we study the valley properties and associated manipulations of multiferroic Co$_2$CF$_2$ monolayers with different stacking patterns. Our calculations show that the Co$_2$CF$_2$ monolayer in the H$^{\prime}$ phase is a ferrovalley material, with sizable valley splittings. By rotating the magnetization direction, the valley splittings can be tuned for both the magnitude and sign. The electric field, driving the reversal of the electric polarization, can also change the magnitude of the valley splittings. Besides, a metastable T$^{\prime}$ phase exhibits valley splittings as well, of which the magnitude and sign can be simultaneously controlled by applied magnetic and electric fields. These findings offer a practical way for realizing highly tunable valleys by multiferroic couplings.

Materials Science,Mesoscale and Nanoscale Physics
Spin-valley Coupling in a Two-Dimensional VSi2N4 Monolayer

Qirui Cui,Yingmei Zhu,Jinghua Liang,Ping Cui,Hongxin Yang

DOI: https://doi.org/10.1103/physrevb.103.085421

2021-01-01

Abstract:Materials that integrate magnetism, miniaturization, and valley properties hold potential for spintronic and valleytronic nanodevices. Recently, ferromagnetism was reported to be able to exist in the VSi2N4 monolayer which is half-metallic and belongs to a new kind of two-dimensional material [Hong et al., Science 369, 670 (2020)]. Using first-principles calculations and model analysis, we find that VSi2N4 is a ferromagnetic semiconductor harboring valley-contrasting physics and a magnetic critical temperature over room temperature. By tuning magnetization orientation from in plane to out of plane, valley polarization can be generated, resulting in the anomalous valley Hall effect in VSi2N4. Furthermore, we obtain the formula for energy splitting of valleys and adopt a tight-binding model for VSi2N4, which elucidates the physical mechanism of spin-valley coupling. More interestingly, under 4% tensile strain, the intrinsic magnetic anisotropy of VSi2N4 becomes out of plane, and spontaneous valley polarization is achieved. Our results highlight that VSi2N4 is a good candidate for spintronic and valleytronic applications.
Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Xikui Ma,Yingcai Fan,Weifeng Li,Yangyang Li,Xiangdong Liu,Xian Zhao,Mingwen Zhao

DOI: https://doi.org/10.1039/d3nr03086e

IF: 6.7

2023-10-27

Nanoscale

Abstract:Spontaneous valley polarization, resulting from the magnetic proximity effect, holds tremendous potential for information processing and storage. This effect is highly sensitive to the interfacial electronic properties, encompassing both charge transitions and spin configurations. In this study, we propose the manipulation of valley splitting by leveraging the tunable magnetic proximity effect through sliding an inversion-symmetric antiferromagnetic (AFM-I) monolayer within TMDs/AFM-I/TMDs heterostructures. The presence of the antiferromagnetic monolayer enhances the robustness of the magnetic order during interlayer sliding. Notably, we demonstrate that the polarized stacking of the heterostructures enables the generation of intrinsic out-of-plane and in-plane electric polarization. Intriguingly, interlayer sliding not only reverses the out-of-plane and in-plane electric polarization but also alters the layer-resolved valley splitting, thereby contributing to the emergence of anomalous valley Hall effect and layer Hall effect. In addition, the manipulation of valleys remains consistent with both the valley optical selection rules and the intra/interlayer emission energy, which are contingent upon the interlayer sliding. The findings of this work hold promise for potential applications in the field of valleytronics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Spontaneous and tunable valley polarization in two-dimensional single-layer LaCl2

Yan Li,Jia Li,Jianke Tian,Hengbo Liu,Junjie Shi

DOI: https://doi.org/10.1088/1361-6641/ad4e5f

IF: 2.048

2024-05-23

Semiconductor Science and Technology

Abstract:Applying the valley contrasting properties of valleytronic materials to logical operations is the foundation of valleytronic device manufacturing. It is predicted that single-layer LaCl2 is an ferrovalley material with intrinsic and tunable valley polarization through first-principles calculations. It is a ferromagnetic semiconductor (bandgap 0.767 eV) with roughly 1.0 μB per unit cell as well as out of plane magnetization, and the Curie temperature is about 149 K. The tight-binding model considering five orbitals as well as next nearest neighboring hopping get a consistent band structure with the first-principles calculation. The valley polarization changes from 40.49 to 98.51 meV under the biaxial strain of 5% ~ -5%. Therefore, the biaxial strain can be a means to tune the valley polarization. In addition, the valley polarization of the double-layer structure (~ 80 meV) is much greater than that of the single-layer structure (~ 59 meV) due to the increased magnetic moment of the double-layer structure, indicating the potential tunable character by stacking few layers. We believe that single-layer LaCl2 has great potential for device manufacturing and application in the field of valley electronics.

materials science, multidisciplinary,engineering, electrical & electronic,physics, condensed matter
Generation Of A Fully Valley-Polarized Current In Bulk Graphene

yu song,feng zhai,yong guo

DOI: https://doi.org/10.1063/1.4827995

IF: 4

2013-01-01

Applied Physics Letters

Abstract:The generation of a fully valley-polarized current (FVPC) in bulk graphene is a fundamental goal in valleytronics. To this end, we investigate valley-dependent transport through a strained graphene modulated by a finite magnetic superlattice. It is found that this device allows a coexistence of insulating transmission gap of one valley and metallic resonant band of the other. Accordingly, a substantial bulk FVPC appears in a wide range of edge orientation and temperature, which can be effectively tuned by structural parameters. A valley-resolved Hall configuration is designed to measure the valley polarization degree of the filtered current. (C) 2013 AIP Publishing LLC.
Strain-engineering induced topological phase transitions and multiple valley states in Janus monolayer VCSiN4

Kang Jia,Xiao-Jing Dong,Sheng-Shi Li,Wei-Xiao Ji,Chang-Wen Zhang,Shengshi Li,Weixiao Ji,Chang-wen Zhang

DOI: https://doi.org/10.1039/d3tc01369c

IF: 6.4

2023-01-01

Journal of Materials Chemistry C

Abstract:It is crucial to manipulate the valley degree of freedom for the valleytronics and spintronics development, which offers fascinating opportunities in both practical applications and fundamental researches. Here, based on...

materials science, multidisciplinary,physics, applied
Multifield Tunable Valley Splitting in Two-Dimensional MXene Cr_2COOH

Ping Li,Chao Wu,Cheng Peng,Mutian Yang,Wei Xun

DOI: https://doi.org/10.1103/physrevb.108.195424

2023-01-01

Abstract:Manipulation of the valley degree of freedom provides a novel paradigm in quantum information technology. Here, through first-principles calculations and model analysis, we demonstrate that monolayer Cr_2COOH MXene is a promising candidate material for valleytronics applications. We reveal that Cr_2COOH is a ferromagnetic semiconductor and harbors valley features. Due to the simultaneous breaking inversion symmetry and time-reversal symmetry, the valleys are polarized spontaneously. Moreover, the valley polarization is sizeable in both the valence and conduction bands, benefiting the observation of the anomalous valley Hall effect. More remarkably, the valley splitting can be effectively tuned by the magnetization direction, strain and ferroelectric substrate. More interestingly, the ferroelectric substrate Sc_2CO_2 can not only regulate the MAE, but also tune valley polarization state. Our findings offer a practical way for realizing highly tunable valleys by multiferroic couplings.
Two-dimensional Intrinsic Ferrovalley GdI2 with Large Valley Polarization

Hai-Xia Cheng,Jun Zhou,Wei Ji,Yan-Ning Zhang,Yuan-Ping Feng

DOI: https://doi.org/10.1103/physrevb.103.125121

2021-01-01

Abstract:Manipulation of the valley degree of freedom provides a novel paradigm in quantum information technology. In this work, through first principles calculations, we demonstrate that monolayer GdI2 is a promising candidate material for valleytronic applications. Monolayer GdI2 can be easily exfoliated from bulk, and it is spontaneously valley polarized with a giant splitting of 149 meV due to its intrinsic ferromagnetism and large spin orbital coupling. The anomalous valley Hall effect could be realized in monolayer GdI2 by an appropriate external electric field. Furthermore, the valley polarization feature is stable against the biaxial in-plane strain. Our findings provide an extraordinary and potential material platform for experimental studies and practical applications in the emergent field of valleytronics.
Multifield tunable valley splitting in two-dimensional MXene Cr$_2$COOH

Ping Li,Chao Wu,Cheng Peng,Mutian Yang,Wei Xun

2023-11-02

Abstract:Manipulation of the valley degree of freedom provides a novel paradigm in quantum information technology. Here, through first-principles calculations and model analysis, we demonstrate that monolayer Cr$_2$COOH MXene is a promising candidate material for valleytronics applications. We reveal that Cr$_2$COOH is a ferromagnetic semiconductor and harbors valley features. Due to the simultaneous breaking inversion symmetry and time-reversal symmetry, the valleys are polarized spontaneously. Moreover, the valley polarization is sizeable in both the valence and conduction bands, benefiting the observation of the anomalous valley Hall effect. More remarkably, the valley splitting can be effectively tuned by the magnetization direction, strain and ferroelectric substrate. More interestingly, the ferroelectric substrate Sc$_2$CO$_2$ can not only regulate the MAE, but also tune valley polarization state. Our findings offer a practical way for realizing highly tunable valleys by multiferroic couplings.

Materials Science,Mesoscale and Nanoscale Physics

Controllable dual-polarization valley physics in the strain-engineered 2D monolayer of VC 2 N 4

Controllable Valley Polarization and Strain Modulation in 2D 2H-VS2/CuInP2Se6 Heterostructures

Spontaneous Valley Polarization and Electrical Control of Valley Physics in Single-Layer TcIrGe2S6

Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Engineering Valley Polarization of Monolayer WS2: A Physical Doping Approach

Tunable Valley Polarization in a Multiferroic CuCrP<sub>2</sub>Te<sub>6</sub> Monolayer

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Tunable valley-selective circular polarization in vdW multilayers consisting of inversion-symmetric monolayers

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Valleytronics Candidate with Spontaneous Valley Polarization in A-Type Antiferromagnetic MoSi 2 N 4 /MnPS 3 Heterostructure

Valley Physics and Anomalous Valley Hall Effect in Single-Layer H -MNX (M = Ti, Zr, Hf; X = Cl, Br)

Magnetically and electrically controllable valley splittings in MXene monolayers

Spin-valley Coupling in a Two-Dimensional VSi2N4 Monolayer

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Spontaneous and tunable valley polarization in two-dimensional single-layer LaCl2

Generation Of A Fully Valley-Polarized Current In Bulk Graphene

Strain-engineering induced topological phase transitions and multiple valley states in Janus monolayer VCSiN4

Multifield Tunable Valley Splitting in Two-Dimensional MXene Cr_2COOH

Two-dimensional Intrinsic Ferrovalley GdI2 with Large Valley Polarization

Multifield tunable valley splitting in two-dimensional MXene Cr$_2$COOH