Abstract:For silicon carbide (SiC) processed by ion-implantation, dedicated test structure fabrication or destructive sample processing on test wafers are usually required to obtain depth profiles of electrical characteristics such as carrier concentration. In this study, a rapid and non-destructive approach for depth profiling is presented that uses confocal Raman microscopy. As an example, a 4H–SiC substrate with an epitaxial layer of several micrometers thick and top layer in nanoscale that was modified by ion-implantation was characterized. From the Raman depth profiling, longitudinal optical (LO) mode from the epitaxial layer and longitudinal optical phonon-plasmon coupled (LOPC) mode from the substrate layer can be sensitively distinguished at the interface. The position profile of the LOPC peak intensity in the depth direction was found to be effective in estimating the thickness of the epitaxial layer. For three kinds of epitaxial layer with thicknesses of 5.3 μm, 6 μm, and 7.5 μm, the average deviations of the Raman depth analysis were −1.7 μm, −1.2 μm, and −1.4 μm, respectively. Moreover, when moving the focal plane from the heavily doped sample (~1018 cm−3) to the epitaxial layer (~1016 cm−3), the LOPC peak showed a blue shift. The twice travel of the photon (excitation and collection) through the ion-implanted layer with doping concentrations higher than 1 × 1018 cm−3 led to a difference in the LOPC peak position for samples with the same epitaxial layer and substrate layer. Furthermore, the influences of the setup in terms of pinhole size and numerical aperture of objective lens on the depth profiling results were studied. Different from other research on Raman depth profiling, the 50× long working distance objective lens (50L× lens) was found more suitable than the 100× lens for the depth analysis 4H–SiC with a multi-layer structure.

3D van der Pauw device for MOS channel characterization on 4H-SiC trench sidewalls

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide Characteristics Measurement

Implementation of a short channel (0.3 μm) for 4H-SiC MOSFETs with deep P-well using ‘channeling’ implantation

Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

Investigating Mesa Structure Impact on C-V Measurements

Extraction of the Trench Sidewall Capacitances in an n-Type 4H-SiC Trench Metal– Oxide–Semiconductor Structure

Study of Vertical Capacitance in an n-Type 4H-SiC Stepped Thick-Oxide Trench MOS Structure

Sidewall-Implanted Trench Termination for 4H-SiC Devices With High Breakdown Voltage and Low Leakage Current

Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy

Trench Termination with SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-Sic Devices

Facile 3D Integration of Si Nanowires on Bosch-etched Sidewalls for Stacked Channel Transistors

Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes

4H-SiC trench gate MOSFETs with field plate termination

Trench Field Plate Engineering for High Efficient Edge Termination of 1200 V-class SiC Devices

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Impact of Super-long-throw PVD on TSV Metallization and Die-to-Wafer 3D Integration Based on Via-last

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

High-k Dielectric Assisted Trench Termination of the 4H-SiC Super Junction Device for Improved Avalanche Capability

Lattice Defects Distribution of H+ Implanted 4H-Sic Investigated by Deep-Ultraviolet Raman Spectroscopy

Simulation of a Short-Channel 4H-Sic UMOSFET with Buried P Epilayer for Low Oxide Electric Field and Switching Loss