CMOS-compatible Hf 0.5 Zr 0.5 O 2 -based ferroelectric memory crosspoints fabricated with damascene process

Dorian Coffineau,Nicolas Gariépy,Benoit Manchon,Raphaël Dawant,Abdelatif Jaouad,Étienne Grondin,Serge Ecoffey,Fabien Alibart,Yann Beilliard,Andreas Ruediger,Dominique Drouin

DOI: https://doi.org/10.1088/1361-6528/ad644f

IF: 3.5

2024-07-18

Nanotechnology

Abstract:We report the fabrication of Hf 0.5 Zr 0.5 O 2 (HZO) based ferroelectric memory crosspoints using a CMOS-compatible damascene process. In this work, we compared 12 and 56 μm2 crosspoint devices with the 0.02 mm2 round devices commonly used as a benchmark. For all devices, a 9 nm thick ferroelectric thin film was deposited by plasma-enhanced atomic layer deposition (PEALD) on planarized bottom electrodes (BE). The wake-up appeared to be longer for the crosspoint memories compared to 0.02 mm2 benchmark, while all the devices reached a 2P r value of ~ 50 μC/cm2 after 10 5 cycles with 3 V/10 μs squared pulses. The crosspoints stand out for their superior endurance, which was increased by an order of magnitude. Nucleation limited switching (NLS) experiments were performed, revealing a switching time < 170 ns for our 12 and 56 μm2 devices, while it remained in the μs range for the larger round devices. The downscaled devices demonstrate notable advantages with a rise in endurance and switching speed.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied