Abstract:Refractory metal (Pd/Ge/Ti/Pt/Au) on semi-insulated GaAs (SI-GaAs) have been prepared and annealed at 380,400 and 425℃. Optical microscope and SEM images show that there is no significant difference in refractory metal surface morphology before and after annealing, compared with the standard AuGeNi electrode of a large number of massive crystals precipitated after annealing, and the specific contact resistivity of Pd/Ge/Ti/Pt/Au-SI-GaAs is the lowest at 400℃ annealing. The current-voltage-temperature (I-V-T) characteristics of the as-deposited and annealed devices have been measured in in the high temperature of 300-400 K with steps of 20 K. The behavior of the forward I-V-T characteristics of inhomogeneous Pd/Ge/Ti/Pt/Au-SI-GaAs contact before and after annealing has been investigated. The experimental results show that the barrier height (Φb) and ideality factor (n) derived from the ideal thermionic emission model were strongly temperature dependent. Such behavior of the parameters is attributed to the inhomogeneous barrier height by assuming a Gaussian distribution at the metal/semiconductor (M/S) interface. We draw Φb versus 1/2kT plots to obtain the mean barrier height (`Φ b ) and standard deviation (σ). The values of` Φb are 1.373 eV, 1.275 eV, 1.199 eV and 0.130 eV, with of 0.205 V, 0.184 V, 0.173 V, and 0.193 V for the as-deposited and 380,400 and 425℃ annealed devices, respectively. A modified ln(I0/T2)-q2σ2/2k2T2 versus 1/kT plots give the mean barrier height(Φb) and Richardson constant(A*). The values of `Φb are consistent with the previous calculations. A* of 6.46 A/K2·cm2 for 400℃ annealed device is in closer agreement with the known value for SI-GaAs. Thus, it has been seen that the morphology of refractory metal electrode is better than that of AuGeNi electrode, and the Pd/Ge/Ti/Pt/Au-SI-GaAs contact by the thermal annealing at 400℃ is expected to be used as electrodes in SI-GaAs photoconductive switch instead of the standard AuGeNi metal.

Lagging Thermal Annealing for Barrier Height Uniformity Evolution of Ni/4H-SiC Schottky Contacts

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Effects of the Annealing Temperature on Ni Silicide/n-Si(100) Schottky Contacts

Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing

Annealing Temperature Influence on the Degree of Inhomogeneity of the Schottky Barrier in Ti/4h-Sic Contacts

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes

Effects of Annealing Temperature on the Characteristics of Au/Ti/4H-SiC Schottky Contact

The Effect of Thermal Annealing and Measurement Temperature on Interface State Density Distribution and Time Constant in Ni/n-GaP Rectifying Contacts

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

Thorough Wide-Temperature-Range Analysis of Pt/SiC and Cr/SiC Schottky Contact Non-Uniformity

Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

Schottky Barrier Height Tuning Via The Dopant Segregation Technique Through Low-Temperature Microwave Annealing

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Thermal Annealing Effects on I-V-T Characteristics of Pd/Ge/Ti/Pt/Au-Si-Gaas Contact at High Temperatures

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC

Annealing Temperature Dependent Properties for Ni/Ti/W Ohmic Contacts Simultaneously Formed on N- and P-Type 4H-Sic

Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Schottky Barrier Height Tuning Via Nickel Silicide As Diffusion Source Dopant Segregation Scheme with Microwave Annealing