Abstract:Combining the experimental characterization with the large-scale density functional theory calculations based on finite-element discretization (DFT-FE), we address the stabilization of polar orthorhombic phases (o-HfO2) in Al:HfO2 nanofilms by means of the atomic registry distortions and lattice deformation caused by Al substitutional defects (Al-Hf) and Schottky defects (2Al(Hf) + V-O) in tetragonal phases (t-HfO2) or monoclinic phases (m-HfO2). The phase transformation directly from the t-HfO2 into polar o-HfO2 are also elucidated within a heterogeneous distribution of Al dopants in both t-HfO2 bulk crystal structure and Al:HfO2 nanofilm. It is revealed using large-scale DFT calculations that the Al substitutional defects (Al-Hf) or the Schottky defect (2Al(Hf) + V-O) could induce the highly extended atomic registry distortions or lattice deformation in the t- and m-HfO2 phases, but such effects are greatly diminished in ferroelectric orthorhombic phase. By purposely engineering the multiple Al-Hf defects to form dopant-rich layers in paraelectric t-HfO2 nanofilm or bulk crystal, the induced extended lattice distortions surrounding the defect sites exhibit the shearing-like atomic displacement vector field. The large-scale DFT calculations further predicted that the shearing-like microscopic lattice distortions could directly induce the phase transformation from the t-HfO2 into polar orthorhombic phase in both Al:HfO2 bulk crystal and nanofilms, leading to the large remanent polarization observed in Al:HfO2 nanofilms with the presence of Al-rich layers. The current study demonstrates that the ferroelectricity of HfO2 bulk crystal or thin film can be optimized and tuned by delicately engineering both the distribution and concentration of Al dopants in atomic layer deposition without applying the top capping electrode, providing the extra flexibility for designing the HfO2 based electronic devices in the future.

Improvement of ferroelectric phase fraction in HfO2 via La-containing co-doping method

Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO<sub>2</sub> Thin Films towards General Parameters to Engineer the Ferroelectricity

Effect of Doping Concentration on Intrinsic Ferroelectric Properties of HfLaO-based Ferroelectric Memory

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Modulating the Microscopic Lattice Distortions Through the Al-rich Layers for Boosting the Ferroelectricity in Al:HfO2 Nanofilms

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films

Improving the ferroelectric properties of Lu doped Hf 0.5 Zr 0.5 O 2 thin films by capping a CeO x layer

Insights into the Ferroelectric Orthorhombic Phase Formation in Doped HfO2 Thin Films

A First-Principles Study on the Stable Phase in Yttrium-Doped HFO2

Epitaxial growth and phase evolution of ferroelectric La-doped HfO 2 films

The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Ta5+-substitution effects on crystal structure and ferroelectric property in HfO2-based films

Epitaxial Growth and Phase Evolution of Ferroelectric La-doped HfO2 Films

Ferroelectricity in the Al doped HfO2

Hydrothermal Synthesis and Mechanism and Property Study of La-doped BiFeO3 Crystallites

Impact of Four-Valent Doping on the Crystallographic Phase Formation for Ferroelectric HfO$_2$ from First-Principles: Implications for Ferroelectric Memory and Energy-Related Applications

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

Structure and stability of La- and hole-doped hafnia with/without epitaxial strain