Identifying single spin defects in gallium nitride

Jin-Shi Xu,Chuan-Feng Li

DOI: https://doi.org/10.1038/s41563-024-01841-z

IF: 41.2

2024-04-05

Nature Materials

Abstract:Single spin defects are identified in gallium nitride at room temperature, exhibiting a spin readout contrast of up to 30%.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter

What problem does this paper attempt to address?

Room temperature optically detected magnetic resonance of single spins in GaN

Jialun Luo,Yifei Geng,Farhan Rana,Gregory D. Fuchs

2023-06-21

Abstract:Optically detected magnetic resonance (ODMR) is an efficient mechanism to readout the spin of solid-state color centers at room temperature, thus enabling spin-based quantum sensors of magnetic field, electric field, and temperature with high sensitivity and broad commercial applicability. The mechanism of room temperature ODMR is based on spin-dependent relaxation between the optically excited states to the ground states, and thus it is an intrinsic property of a defect center. In this work we report that two distinct defect types exist in GaN based on their ODMR signatures. One group has small negative ODMR based on a spin in a metastable state. The second group has large (up to $\sim$30\%) positive ODMR contrast based on ground-state spin. Because GaN is a mature semiconductor with well-developed electronic technologies already developed, this defect platform is promising for integrated quantum sensing applications.

Materials Science,Quantum Physics
Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Qiang Li,Jun-Feng Wang,Fei-Fei Yan,Ji-Yang Zhou,Han-Feng Wang,He Liu,Li-Ping Guo,Xiong Zhou,Adam Gali,Zheng-Hao Liu,Zu-Qing Wang,Kai Sun,Guo-Ping Guo,Jian-Shun Tang,Hao Li,Li-Xing You,Jin-Shi Xu,Chuan-Feng Li,Guang-Can Guo

DOI: https://doi.org/10.1093/nsr/nwab122

IF: 20.6

2021-07-05

National Science Review

Abstract:Abstract Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperature single-spin manipulation of colour centres in SiC has been demonstrated, the typically detected contrast is less than 2$\%$, and the photon count rate is also low. Here, we present the coherent manipulation of single divacancy spins in 4H-SiC with a high readout contrast ($-30\%$) and a high photon count rate (150 kilo counts per second) under ambient conditions, which are competitive with the nitrogen-vacancy (NV) centres in diamond. Coupling between a single defect spin and a nearby nuclear spin is also observed. We further provide a theoretical explanation for the high readout contrast by analysing the defect levels and decay paths. Since the high readout contrast is of utmost importance in many applications of quantum technologies, this work might open a new territory for SiC-based quantum devices with many advanced properties of the host material.

multidisciplinary sciences
Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN

William F. Koehl,Berk Diler,Samuel J. Whiteley,Alexandre Bourassa,N. T. Son,Erik Janzén,David D. Awschalom

DOI: https://doi.org/10.1103/PhysRevB.95.035207

2016-08-30

Abstract:Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information technologies. In particular, there is a growing interest in the identification of new classes of defect spin that can be controlled optically. Here we demonstrate ensemble optical spin polarization and optically detected magnetic resonance (ODMR) of the S = 1 electronic ground state of chromium (Cr4+) impurities in silicon carbide (SiC) and gallium nitride (GaN). Spin polarization is made possible by the narrow optical linewidths of these ensembles (< 8.5 GHz), which are similar in magnitude to the ground state zero-field spin splitting energies of the ions at liquid helium temperatures. We therefore are able to optically resolve individual spin sublevels within the ensembles at low magnetic fields using resonant excitation from a cavity-stabilized, narrow-linewidth laser. Additionally, these near-infrared emitters possess exceptionally weak phonon sidebands, ensuring that > 73% of the overall optical emission is contained with the defects zero-phonon lines. These characteristics make this semiconductor-based, transition metal impurity system a promising target for further study in the ongoing effort to integrate optically active quantum states within common optoelectronic materials.

Mesoscale and Nanoscale Physics,Materials Science,Quantum Physics
Deep-level structure of the spin-active recombination center in dilute nitrides

A. C. Ulibarri,C. T. K. Lew,S. Q. Lim,J. C. McCallum,B. C. Johnson,J. C. Harmand,J. Peretti,A. C. H. Rowe

DOI: https://doi.org/10.1103/PhysRevLett.132.186402

2023-12-02

Abstract:A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap electronic structure of a $x$ = 0.021 alloy is revealed. The (+/0) state lies $\approx$ 0.27 eV below the conduction band edge, and an anomalous, negative activation energy reveals the presence of not one but \textit{two} other states in the gap. The observations are consistent with a (++/+) state $\approx$ 0.19 eV above the valence band edge, and a hitherto ignored, (+++/++) state $\approx$ 25 meV above the valence band edge. These observations can inform efforts to better model the SDR and the Ga$_{\textrm{i}}$ defect's local chemical environment.

Materials Science,Mesoscale and Nanoscale Physics
Room-temperature coherent control of implanted defect spins in silicon carbide

Fei-Fei Yan,Ai-Lun Yi,Jun-Feng Wang,Qiang Li,Pei Yu,Jia-Xiang Zhang,Adam Gali,Ya Wang,Jin-Shi Xu,Xin Ou,Chuan-Feng Li,Guang-Can Guo

DOI: https://doi.org/10.1038/s41534-020-0270-8

IF: 10.758

2020-05-14

npj Quantum Information

Abstract:Abstract Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken to identify spin systems in SiC and to extend their quantum capabilities using large-scale growth and advanced nanofabrication methods. Here we demonstrated a type of spin defect in the 4H polytype of SiC generated via hydrogen ion implantation with high-temperature post-annealing, which is different from any known defects. These spin defects can be optically addressed and coherently controlled even at room temperature, and their fluorescence spectrum and optically detected magnetic resonance spectra are different from those of any previously discovered defects. Moreover, the generation of these defects can be well controlled by optimizing the annealing temperature after implantation. These defects demonstrate high thermal stability with coherently controlled electron spins, facilitating their application in quantum sensing and masers under harsh conditions.

physics, condensed matter, applied, atomic, molecular & chemical,quantum science & technology
Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination

Xingjun Wang,I. A. Buyanova,Weimin Chen,Feixiang Zhao,Delphine Lagarde,Andréa Balocchi,X. Marie,Young Bin Hong,C. W. Tu,J.C. Harmand

2008-01-01

Abstract:The issues of generating and maintaining carrier spin polarization in semiconductors have attracted intense research efforts, not only due to their importance for future applications in spintronics but also due to the intriguing physics underpinning spin-dependent phenomena. Entering the family of semiconductors that exhibit attractive spin-dependent properties, Ga(In)NAs was most recently found to exhibit strong spin polarization of conducting electrons at room temperature upon N incorporation with an extremely long apparent spin lifetime. In this work we have uncovered the origin of the astonishing effect as being due to strong spin dependent recombination (SDR) via defects, by a combination of optical orientation and optically detected magnetic resonance (ODMR) studies. We were able to identify Ga self-interstitials and an As antisite complex to be the dominant defects participating in the SDR process. The involvement of these defects were unambiguously established by their unique spin-resonance signatures derived from the hyperfine interaction between the localized unpaired electron spin and nuclear spins (I=3/2) of the As and Ga atom - the core of the defects. These defects dominate in carrier capture and recombination leading to the observed strong dynamic polarization of electron spins. Further confirmation was found by the effects of growth conditions and post-growth treatments on the defect density that were closely correlated with the electron spin polarization.
Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

Aniruddha Bhattacharya,Zunaid Baten,Pallab Bhattacharya,Md Zunaid Baten

DOI: https://doi.org/10.1063/1.4940888

IF: 4

2016-01-25

Applied Physics Letters

Abstract:We report the measurement of diffusive electronic spin transport characteristics in an epitaxial wurtzite GaN lateral spin valve at room temperature. Hanle spin precession and non-local spin accumulation measurements have been performed with the spin valves fabricated with FeCo/MgO spin contacts. Electron spin relaxation length and spin-flip lifetime of 176 nm and 37 ps, respectively, are derived from analysis of results obtained from four-terminal Hanle spin precession measurements at 300 K. The role of dislocations and defects in bulk GaN has also been examined in the context of electronic spin relaxation dynamics.

physics, applied
Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride

Nai-Jie Guo,Wei Liu,Zhi-Peng Li,Yuan-Ze Yang,Shang Yu,Yu Meng,Zhao-An Wang,Xiao-Dong Zeng,Fei-Fei Yan,Qiang Li,Jun-Feng Wang,Jin-Shi Xu,Yi-Tao Wang,Jian-Shun Tang,Chuan-Feng Li,Guang-Can Guo

DOI: https://doi.org/10.1021/acsomega.1c04564

IF: 4.1

2022-01-04

ACS Omega

Abstract:Optically addressable spin defects in wide-band-gap semiconductors as promising systems for quantum information and sensing applications have recently attracted increased attention. Spin defects in two-dimensional materials are expected to show superiority in quantum sensing due to their atomic thickness. Here, we demonstrate that an ensemble of negatively charged boron vacancies (VB -) with good spin properties in hexagonal boron nitride (hBN) can be generated by ion implantation. We carry out optically detected magnetic resonance measurements at room temperature to characterize the spin properties of ensembles of VB - defects, showing a zero-field splitting frequency of ∼3.47 GHz. We compare the photoluminescence intensity and spin properties of VB - defects generated using different implantation parameters, such as fluence, energy, and ion species. With the use of the proper parameters, we can successfully create VB - defects with a high probability. Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for realizing integrated hBN-based devices.

chemistry, multidisciplinary
Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)

Larisa Latypova,Fadis Murzakhanov,George Mamin,Margarita Sadovnikova,Hans Jurgen von Bardeleben,Julietta V. Rau,Marat Gafurov

DOI: https://doi.org/10.3390/molecules29133033

IF: 4.6

2024-06-27

Molecules

Abstract:High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optically active vacancy-type defects, which manifest themselves as single-photon sources or spin qubits. Among the defects, the nitrogen-vacancy centers (NV) are of particular importance. This paper is devoted to the application of the photoinduced electron paramagnetic resonance (EPR) and electron–nuclear double resonance (ENDOR) techniques at a high-frequency range (94 GHz) to obtain unique information about the nature and properties of NV defects in SiC crystal of the hexagonal 4H and 6H polytypes. Selective excitation by microwave and radio frequency pulses makes it possible to determine the microscopic structure of the color center, the zero-field splitting constant (D = 1.2–1.3 GHz), the phase coherence time (T2), and the values of hyperfine (≈1.1 MHz) and quadrupole (Cq ≈ 2.45 MHz) interactions and to define the isotropic (a = −1.2 MHz) and anisotropic (b = 10–20 kHz) contributions of the electron–nuclear interaction. The obtained data are essential for the implementation of the NV defects in SiC as quantum registers, enabling the optical initialization of the electron spin to establish spin–photon interfaces. Moreover, the combination of optical, microwave, and radio frequency resonant effects on spin centers within a SiC crystal shows the potential for employing pulse EPR and ENDOR sequences to implement protocols for quantum computing algorithms and gates.

chemistry, multidisciplinary,biochemistry & molecular biology
Experimental observation of spin defects in van der Waals material GeS$_2$

W. Liu,S. Li,N.-J. Guo,X.-D. Zeng,L.-K. Xie,J.-Y. Liu,Y.-H. Ma,Y.-Q. Wu,Y.-T. Wang,Z.-A. Wang,J.-M. Ren,C. Ao,J.-S. Xu,J.-S. Tang,A. Gali,C.-F. Li,G.-C. Guo

2024-10-25

Abstract:Spin defects in atomically thin two-dimensional (2D) materials such as hexagonal boron nitride (hBN) attract significant attention for their potential quantum applications. The layered host materials not only facilitate seamless integration with optoelectronic devices but also enable the formation of heterostructures with on-demand functionality. Furthermore, their atomic thickness renders them particularly suitable for sensing applications. However, the short coherence times of the spin defects in hBN limit them in quantum applications that require extended coherence time. One primary reason is that both boron and nitrogen atoms have non-zero nuclear spins. Here, we present another 2D material germanium disulfide ($\beta$-GeS$_2$) characterized by a wide bandgap and potential nuclear-spin-free lattice. This makes it as a promising host material for spin defects that possess long-coherence time. Our findings reveal the presence of more than two distinct types of spin defects in single-crystal $\beta$-GeS$_2$. Coherent control of one type defect has been successfully demonstrated at both 5 K and room temperature, and the coherence time $T_2$ can achieve tens of microseconds, 100-folds of that of negatively charged boron vacancy (V$_{\text{B}}^-$) in hBN, satisfying the minimal threshold required for metropolitan quantum networks--one of the important applications of spins. We entatively assign the observed optical signals come from substitution defects. Together with previous theoretical prediction, we believe the coherence time can be further improved with optimized lattice quality, indicating $\beta$-GeS$_2$ as a promising host material for long-coherence-time spins.

Quantum Physics
Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

F. Zhao,A. Balocchi,A. Kunold,J. Carrey,H. Carrère,T. Amand,N. Ben Abdallah,J.C. Harmand,X. Marie

DOI: https://doi.org/10.1063/1.3273393

2010-03-01

Abstract:By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a non-magnetic GaAsN semiconductor structure. By switching the polarization of the incident light from linear to circular, we observe a Giant Spin-dependent Photoconductivity (GSP) reaching up to 40 % without the need of an external magnetic field. We show that the GSP is due to a very efficient spin filtering effect of conduction band electrons on Nitrogen-induced Ga self-interstitial deep paramagnetic centers.

Other Condensed Matter
Native defects in gallium nitride

P. Bogusl/awski,E. L. Briggs,J. Bernholc

DOI: https://doi.org/10.1103/physrevb.51.17255

IF: 3.7

1995-06-15

Physical Review B

Abstract:The results of an extensive theoretical study of native defects in hexagonal GaN are presented. We have considered cation and anion vacancies, antisites, and interstitials. The computations were carried out using ab initio molecular dynamics in supercells containing 72 atoms. N vacancy introduces a shallow donor level, and may be responsible for the n-type character of as-grown GaN. Due to the wide gap of nitrides, self-compensation effects strongly reduce both n-type and p-type doping efficiencies due to the formation of gallium vacancy and interstitial Ga, respectively.

physics, condensed matter, applied,materials science, multidisciplinary
Plasmonic-enhanced bright single spin defects in silicon carbide membranes

Ji-Yang Zhou,Qiang Li,Zhi-He Hao,Wu-Xi Lin,Zhen-Xuan He,Rui-Jian Liang,Liping Guo,Hao Li,Lixing You,Jian-Shun Tang,Jin-Shi Xu,Chuan-Feng Li,Guang-Can Guo

DOI: https://doi.org/10.1021/acs.nanolett.3c00568

2023-05-05

Abstract:Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly limits their applications. We strongly enhanced the brightness by 7 times and spin-control strength by 14 times of single divacancy defects in 4H-SiC membranes using surface plasmon generated by gold film coplanar waveguides. The mechanism of the plasmonic-enhanced effect is further studied by tuning the distance between single defects and the surface of the gold film. A three-energy-level model is used to determine the corresponding transition rates consistent with the enhanced brightness of single defects. Lifetime measurements also verified the coupling between defects and surface plasmons. Our scheme is low-cost, without complicated microfabrication and delicate structures, which is applicable for other spin defects in different materials. This work would promote developing spin defect-based quantum applications in mature SiC materials.

Optics,Quantum Physics
Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Tang Ning,Shen Bo,Han Kui

2009-01-01

Abstract:Owing to the advantages of long spin relaxation time and high Curie temperature,Ⅲ-nitride semiconductor material is one of the most favorite materials in developing spintronic devices.Two main physical effects are introduced to study spin properties of the two-dimensional electron gas in Al_xGa_(1-x)N/GaN heterostructures,including beating pattern Shubnikov-de Haas oscillations and weak-antilocalization effect.The development of the spin properties of the 2DEG in Al_xGa_(1-x)N/GaN heterostructures is reviewed.Due to the large polarization-induced field in Al_xGa_(1-x)N/GaN heterostructures,a 2DEG with large sheet carrier concentration can be obtained.The spin splitting energy of the 2DEG is very large in Al_xGa_(1-x)N/GaN heterostructures.The spin splitting can also be controlled by the gate voltage.Thus it has good application prospects in spin field effect transistors.However,the spin injection efficiency in GaN is still a major problem which hinders the devolopment of GaN-based spintronic devices.
Single nuclear spin detection and control in a van der Waals material

Xingyu Gao,Sumukh Vaidya,Kejun Li,Saakshi Dikshit,Shimin Zhang,Peng Ju,Kunhong Shen,Yuanbin Jin,Yuan Ping,Tongcang Li

2024-09-03

Abstract:Optically active spin defects in solids are leading candidates for quantum sensing and quantum networking. Recently, single spin defects were discovered in hexagonal boron nitride (hBN), a layered van der Waals (vdW) material. Due to its two-dimensional structure, hBN allows spin defects to be positioned closer to target samples than in three-dimensional crystals, making it ideal for atomic-scale quantum sensing, including nuclear magnetic resonance (NMR) of single molecules. However, the chemical structures of these defects remain unknown, and detecting a single nuclear spin with an hBN spin defect has been elusive. In this study, we created single spin defects in hBN using $^{13}$C ion implantation and identified three distinct defect types. We observed both $S=1$ and $S=1/2$ spin states within a single hBN spin defect, with only the $S=1/2$ states showing strong hyperfine interactions with nearby $^{13}$C nuclear spins. For the first time, we demonstrated atomic-scale NMR and coherent control of individual nuclear spins in a vdW material. By comparing experimental results with density-functional theory calculations, we propose chemical structures for these spin defects. Our work advances the understanding of single spin defects in hBN and provides a pathway to enhance quantum sensing using hBN spin defects with nuclear spins as quantum memories.

Quantum Physics,Mesoscale and Nanoscale Physics
High-efficient spin injection in GaN through a lattice-matched tunnel layer

Mingyu Chen,Shiming Huang,Wei Jiang,Qipeng Wu,Peng Tan,Chenhao Zhang,Deyi Fu,Xu Li,Zhiming Wu,Yaping Wu,Rong Zhang,Junyong Kang

DOI: https://doi.org/10.1063/5.0194999

IF: 4

2024-06-10

Applied Physics Letters

Abstract:Semiconductor spintronics has brought about revolutionary application prospects in future electronic devices. The tunnel junction plays a key role in achieving efficient spin injection in semiconductors. This work employed the GaN semiconductor as a room-temperature spin injection system, taking advantage of its weak spin–orbit coupling and spin scattering. By introducing a lattice-matched AlN barrier layer to improve the tunneling interface, advanced spin injection and transport were realized compared with traditional oxide barriers. The spin polarization was further improved by modulating the applied bias, and a bias-controlled tunneling enhancement mechanism was revealed. Consequently, we demonstrated a high record of spin polarization of 20.5%. This work paves a feasible route for achieving efficient spin injection and transport in GaN, which will further promote the development of room-temperature and high-performance spintronic devices.

physics, applied
High-fidelity single-shot readout of single electron spin in diamond with spin-to-charge conversion

Qi Zhang,Yuhang Guo,Wentao Ji,Mengqi Wang,Jun Yin,Fei Kong,Yiheng Lin,Chunming Yin,Fazhan Shi,Ya Wang,Jiangfeng Du

DOI: https://doi.org/10.1038/s41467-021-21781-5

2020-09-30

Abstract:High fidelity single-shot readout of qubits is a crucial component for fault-tolerant quantum computing and scalable quantum networks. In recent years, the nitrogen-vacancy (NV) center in diamond has risen as a leading platform for the above applications. The current single-shot readout of the NV electron spin relies on resonance fluorescence method at cryogenic temperature. However, the the spin-flip process interrupts the optical cycling transition, therefore, limits the readout fidelity. Here, we introduce a spin-to-charge conversion method assisted by near-infrared (NIR) light to suppress the spin-flip error. This method leverages high spin-selectivity of cryogenic resonance excitation and high flexibility of photonionization. We achieve an overall fidelity $>$ 95% for the single-shot readout of an NV center electron spin in the presence of high strain and fast spin-flip process. With further improvements, this technique has the potential to achieve spin readout fidelity exceeding the fault-tolerant threshold, and may also find applications on integrated optoelectronic devices.

Quantum Physics,Applied Physics,Optics
Optical Spin Initialization of Nitrogen Vacancy Centers in a 28Si-Enriched 6H-SiC Crystal for Quantum Technologies

F. F. Murzakhanov,M. A. Sadovnikova,G. V. Mamin,D. V. Shurtakova,E. N. Mokhov,O. P. Kazarova,M. R. Gafurov

DOI: https://doi.org/10.1134/S0021364024600708

2024-07-18

Abstract:High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitrogen-vacancy color centers NV in a 28Si-enriched (nuclear spin I = 0) 6H-28SiC crystal have been studied using the photoinduced (980 nm) high-frequency (94 GHz, 3.4 T) pulsed electron paramagnetic resonance method at a temperature of 150 K. Three structurally nonequivalent types of NV- centers with axial symmetry have been identified and their spectroscopic parameters have been determined. Long spin-lattice, T1=1.3 ms, and spin-spin, T2=59 us, ensemble relaxation times of NV- centers with extremely narrow (450 kHz) absorption lines allow highly selective excitation of resonant transitions between sublevels caused by the weak hyperfine interaction (A = 1 MHz) with 14N (I = 1) nuclei for the quantum manipulation of the electron spin magnetization.

Materials Science
Single‐Crystalline Gallium Nitride Microspindles: Synthesis, Characterization, and Thermal Stability

F Xu,Y Xie,X Zhang,SY Zhang,XM Liu,W Xi,XB Tian

DOI: https://doi.org/10.1002/adfm.200305004

IF: 19

2004-01-01

Advanced Functional Materials

Abstract:This paper describes a facile procedure for synthesizing high-quality gallium nitride microspindles on a large scale using a solid-state reaction of GaI3, NaNH2, and NH4Cl in a sealed system at 500degreesC for 6 h. The structures, compositions, and morphologies of the as-synthesized products are derived from X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and field-emission scanning electron microscopy (FE-SEM). The selected-area electron diffraction (SAED) patterns and high-resolution transmission electron microscopy (HRTEM) images show that the as-synthesized GaN spindles are composed of many single-crystalline platelets. The GaN microspindles show different optical properties depending on their shape (e.g., nanowires or nanoparticles) in photoluminescence (PL) emission spectroscopy and Raman spectroscopy. The possible growth mechanism of GaN microspindles is controlled by linear kinetics with a driving force proportional to the difference between a local supersaturation and an equilibrium chemical potential. Furthermore, the thermal stability of the GaN microspindles is investigated under various annealing conditions and discussed on the basis of additional TEM and XRD analyses.

Identifying single spin defects in gallium nitride

Room temperature optically detected magnetic resonance of single spins in GaN

Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN

Deep-level structure of the spin-active recombination center in dilute nitrides

Room-temperature coherent control of implanted defect spins in silicon carbide

Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination

Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride

Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)

Experimental observation of spin defects in van der Waals material GeS$_2$

Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

Native defects in gallium nitride

Plasmonic-enhanced bright single spin defects in silicon carbide membranes

Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Single nuclear spin detection and control in a van der Waals material

High-efficient spin injection in GaN through a lattice-matched tunnel layer

High-fidelity single-shot readout of single electron spin in diamond with spin-to-charge conversion

Optical Spin Initialization of Nitrogen Vacancy Centers in a 28Si-Enriched 6H-SiC Crystal for Quantum Technologies

Single‐Crystalline Gallium Nitride Microspindles: Synthesis, Characterization, and Thermal Stability