Abstract:Spin–orbit torque (SOT) magnetic random access memory is envisioned as an emerging nonvolatile memory due to its ultrahigh speed and low power consumption. The field-free switching scheme in SOT devices is of great interest to both academia and industry. Here, we propose a novel field-free deterministic magnetization switching scheme in a regular magnetic tunnel junction by using two currents sequentially passing interlaced paths, with less requirements of the manufacturing process or additional physical effects. The switching is bipolar since the final magnetization state depends on the combination of current paths. The functionality and robustness of the proposed scheme are validated through both macrospin and micromagnetic simulation. The influences of field-like torque and the Dzyaloshinskii–Moriya interaction effect are further researched. Our proposed scheme shows good scalability and is expected to realize novel digital logic and even computing-in-memory platforms.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c23127?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c23127</a>.Numerical calculation and verification on <a class="ref internalNav" href="#eq6">eqs 6</a> and <a class="ref internalNav" href="#eq8">8</a>; statement of the fluctuating thermal field; phase diagram of the first current and switching probability; results of timing analysis; micromagnetic simulation method; and snapshots of magnetization (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c23127/suppl_file/am0c23127_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Orthogonal-Bulk-Spin-Orbit-Torque Device for All-Electrical In-Memory Computing

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Implementation of Highly Reliable and Energy‐Efficient Nonvolatile In‐Memory Computing Using Multistate Domain Wall Spin–Orbit Torque Device

Field-free Approaches for Deterministic Spin–orbit Torque Switching of the Perpendicular Magnet

Field-Free Spin–Orbit Torque Switching via Oscillatory Interlayer Dzyaloshinskii–Moriya Interaction for Advanced Memory Applications

Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System

Orthogonal Spin-Orbit Torque-Induced Deterministic Switching in NiO

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Strain-mediated spin-orbit torque switching for magnetic memory

Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device

Deterministic Spin–Orbit Torque Switching by a Light-Metal Insertion

Reconfigurable Spin Logics and High-density Multistate Memory in a Single Spin-orbit Torque Device

Spin-orbit torques: Materials, physics, and devices

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Electrically Reconfigurable 3D Spin‐Orbitronics

Orbit-transfer torque driven field-free switching of perpendicular magnetization

Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory

Oscillatory spin-orbit torque switching induced by field-like torques