Abstract:Nanostructured bismuth oxyselenide (Bi2O2Se) semiconductor, a two-dimensional (2D) materials with high-mobility, air-stability, and tunable bandgap, has recently emerged as a candidate of channel material for future digital (electronic and optoelectronic) applications. In terms of material morphology, some basic issues will be addressed when a two-dimensional layered crystal is shaped into a one-dimensional (1D) geometry due to size effect; these include the space-confined transport in a plane, which leads to dramatic changes in electronic, optical, and thermal properties. These novel 1D nanostructures with unique properties are an optimal choice for fabricating next-generation integrated circuits and functional devices within the nanometer scale such as gate-all-around field-effect transistors, single-electron transistors, chemical sensors, and THz detectors. As one of the high-mobility 2D semiconductor, 1D high-quality Bi2O2Se nanoribbons could be promising for applications in high-performance transistors; however, their synthesis has not been completely developed yet. In our study, we report on the facile growth of Bi2O2Se nanoribbons on mica substrates via a bismuth-catalyzed vapor-liquid-solid (VLS) mechanism. The preparation of Bi2O2Se nanoribbons is based on a previous work that emphasized on the oxidation of Bi2Se3 in a chemical vapor deposition (CVD) system and the use of bismuth (Bi) particles as the precursor of Bi catalysis. The morphology, composition, and structure of the as-grown Bi2O2Se nanoribbons were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM), as well as other methods. For a Bi mediated VLS growth process, the growth of Bi2O2Se nanoribbons can be self-assembled; further, in this process, as-grown epitaxial Bi2O2Se nanoribbons are free-standing with out-of-plane morphology on the mica substrate. Additionally, combining the spherical aberration corrected transmission electron microscope (ACTEM) and selected electron diffraction (SAED) methods, we discovered that the as-synthesized Bi2O2Se nanoribbons were single crystalline with high quality. We further investigated the controllable growth for domain size by optimizing the growth temperature of the Bi2O2Se nanoribbons. As-synthesized single-crystal Bi2O2Se nanoribbons have widths in the range of 100 nm to 20 mu m and lengths in the sub-millimeter range. By employing a polymer poly(methyl methacrylate) (PMMA) assisted clean transfer method with the assistance of deionized water, the Bi2O2Se nanoribbons can be easily transferred onto a SiO2/Si substrate. Fabricated into the top-gated field-effect device, the Bi2O2Se nanoribbon sample (transferred to the SiO2/Si substrate) exhibited high electronic performances; these included a high electron mobility of similar to 220 cm(2).V-1.s(-1) at room temperature, good switching behavior with on/off ratio of >10(6), and high on current density of similar to 42 mu A.mu m(-1) at a channel length of 10 mu m. Therefore, Bi2O2Se nanoribbons are expected to be a promising materials for building high-performance transistors in the future.

Strain-Free Layered Semiconductors for 2D Transistors with On-State Current Density Exceeding 1.3 mA μm –1

Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors.

Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se

High Mobility Two-Dimensional Bismuth Oxyselenide Single Crystals with Large Grain Size Grown by Reverse-Flow Chemical Vapor Deposition

CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors

High-performance Sub-10 Nm Monolayer Bi2O2Se Transistors

Chemical Vapor Deposition Growth of High-Mobility 2D Semiconductor Bi2O2Se:Controllability and Material Quality

A Single-Crystalline Native Dielectric for Two-Dimensional Semiconductors with an Equivalent Oxide Thickness below 0.5 Nm

Thickness- and strain-tunable electronic structures of two-dimensional Bi2O2Se

Epitaxial Integration of Transferable High-κ Dielectric and 2D Semiconductor

Vapor-Liquid-Solid Growth of Bi<sub>2</sub>O<sub>2</sub>Se Nanoribbons for High-Performance Transistors

Sub 10 nm Bilayer Bi 2 O 2 Se Transistors

Ultrahigh Electron Mobility Induced By Strain Engineering In Direct Semiconductor Monolayer Bi2tese2

Single-crystalline van der Waals layered dielectric with high dielectric constant

Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi2O2Se Nanosheets

Salt‐Assisted Low‐Temperature Growth of 2D Bi2O2Se with Controlled Thickness for Electronics

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

High-Performance Sub-10 Nm Two-Dimensional SbSeBr Transistors Through Transport Orientation.

Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit

A native oxide high-kappa gate dielectric for two-dimensional electronics

High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching