Unraveling the Nanoscale Segregation Mechanism in N-Doped Niobium for Enhanced SRF Performance
Zhaoxi Chen,Yue Zong,Yue Chai,E. Mengzheng,Yulu He,Shucheng Shi,Jun Cai,Qing Zhang,Jun Li,Jinfang Chen,Xuerong Liu,Zhu-Jun Wang,Dong Wang,Zhi Liu
DOI: https://doi.org/10.1002/smtd.202301319
IF: 12.4
2024-01-01
Small Methods
Abstract:The nitrogen doping (N-doping) treatment for niobium superconducting radio-frequency (SRF) cavities is one of the key enabling technologies that support the development of more efficient future large accelerators. However, the N-doping results have diverged due to a complex chemical profile under the nitrogen-doped surface. Particularly, under industrial-scale production conditions, it is difficult to understand the underlying mechanism thus hindering performance improvement. Herein, a combination of spatially resolved and surface-sensitive approaches is employed to establish the detailed near-surface phase composition of thermally processed niobium. The results show that intermediate phase segregations, particularly the nanometric carbon-rich phase, can impede the nitridation process and limit the interactions between nitrogen and the niobium sub-surface. In comparison, the removal of the carbon-rich layer at the Nb surface leads to enhanced nitrogen binding at the Nb surface. Combining the RF test results, it is shown that the complex uniformity and grain boundary penetrations of impurity elements have a direct correlation with the mid-field quench behavior in the N-doped Nb cavities. Therefore, proper control of the nanometric intermediate phase formation in discrete thermal steps is critical in improving the ultimate performance and production yield of the Nb cavities. The origin of the omnipresent mid-field quench issue of nitrogen-doped Nb cavities for modern electron accelerators is traced down to the nanometric phase compositions at the niobium surface by unraveling the key elemental interplay and functioning mechanisms of carbon, nitrogen, and oxygen. Guided by the findings, N-doped 1.3 GHz single-cell Nb cavity with top-tier performance is successfully manufactured.image