Abstract:The photoluminescence (PL) and photoluminescence excitation spectra (PLE) of selected InxGa1-xN samples grown by metal organic chemical vapor deposition (MOCVD) have been investigated, and the analysis of structural and optical behaviors has been taken to study the existence of the microstructure InGaN alloys on the basis of X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements.XRD reveals that the sample is a single crystalline InxGa1-xN film formed predominantly in (0002) direction, the In mole composition x in InxGa1-xN film is calculated to be about 0.2 according to the Bragg's angle of InxGa1-xN (0002). The AFM plane-view and 3D images of the selected In0.2Ga0.8N sample show almost uniform island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. The islands composed of the grapes-like have an average height of 10 nm at most and a mean size of 300 nm. The self-organized microstructure appeared to form cone and/or pyramid shape and tended to agglomerate island-like surface with RMS roughness about 10 nm, which attributed to Stranski-Krastanov growth mechanism. The comparison between PLE and PL under different exciting or monitoring energy allows determining the existence of wetting layer (WL)in the sample. The PLE and PL measurements show that the resonant absorption is related to the band gap and wetting layer of the alloy at different exciting and monitoring energy. It has been found that PLE peaks of the In0.2Ga0.8N alloy are dominated by 365 nm and 474 nm with monitoring wavelength 545 nm and 493 nm; the broad 545 nm and narrow 493 nm emission peaks are originated from In(Ga)N wetting layer and InGaN region respectively. The structural and optical analyses suggest that the origin of the exciton localization center is the self-formed islands. Hence, the irrelevancy of the PL spectra to the gap energy was explained in terms of fluctuation resulting from variations in grain size or shape. This type of localized center provides another physical model for the proposed localized states in InxGa1-xN epilayers. Further characterization of the InGaN systems is underway to help fully understand the correlation between the structural and the optical pro-perties of self-organized micro-structure of InGaN system.

Sub-bandgap optical absorption processes in 300-nm-thick Al1− x In x N alloys grown on a c -plane GaN/sapphire template

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

Alloy Composition Fluctuation And Band Edge Energy Structure Of In-Rich Inxga1-Xn Layers Investigated By Systematic Spectroscopy

Narrow bandgap group III-nitride alloys

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

Intersubband Absorption Properties of High Al Content Al X Ga 1− X N/GaN Multiple Quantum Wells Grown with Different Interlayers by Metal Organic Chemical Vapor Deposition

Structural and Optical Properties of AlxGa1−xN (0.33 ≤ X ≤ 0.79) Layers on High-Temperature AlN Interlayer Grown by Metal Organic Chemical Vapor Deposition

Investigation on Optical and Micro-structural Properties of Inx Ga1-x N Alloys Grown by MOCVD

Raman scattering study of In xGa 1-xN alloys with low indium compositions

Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

InSb1 − Xnx Alloys on GaSb Substrate by Metal-Organic Chemical Vapor Deposition for Long Wavelength Detection

Study Of Ultraviolet Emission Enhancement In Alxinyga1-X-Yn Quaternary Alloy Film

Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Raman Scattering Study of In <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N Alloys with Low Indium Compositions

Optical Properties and Electronic Structure of Inn and In-Rich Group Iii-Nitride Alloys

Bandgap Engineering of InSb by N Incorporation by Metal-Organic Chemical Vapor Deposition

Comparative Study Of Intersubband Absorption In Algan/Gan And Alinn/Gan Superlattices: Impact Of Material Inhomogeneities

Optical Properties and Bonding Behaviors of InSbN Alloys Grown by Metal-Organic Chemical Vapor Deposition

Optical Properties of In2 xGa2-2 xO3 Nanowires Revealed by Photoacoustic Spectroscopy