Effect of boron concentration on local structure and spontaneous polarization in AlBN thin films

S. Calderon,John Hayden,M. Delower,Jon-Paul Maria,Elizabeth C. Dickey,S. Calderon V

DOI: https://doi.org/10.1063/5.0179942

IF: 6.6351

2024-02-01

APL Materials

Abstract:The discovery of ferroelectricity in polar wurtzite-based ternary materials, such as Al1−xBxN, has attracted attention due to their compatibility with complementary metal–oxide–semiconductor processes and potential use in integrated non-volatile memory devices. However, the origin of ferroelectricity and the fundamental control of the polarization switching in these materials are still under intensive investigation but appear to be related to local disorder induced from the alloying. In this work, we report the effect of boron alloying on the local structure of Al1−xBxN films deposited by magnetron sputtering. Our results reveal a diminished crystalline order as a function of boron concentration, accompanied by a reduction in the spontaneous polarization. The film disorder is primarily associated with the dissimilar bond lengths between Al–N and B–N and the formation of threading dislocations induced by B incorporation in the structure.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

What problem does this paper attempt to address?

### Problems Addressed by the Paper

The paper primarily explores the impact of boron doping on the local structure and spontaneous polarization of aluminum boron nitride (AlBN) thin films. Specifically:

1. **Impact of Boron Doping on Structure**:
- The study found that as the boron concentration increases, the crystalline order of the thin films decreases, and lattice disorder occurs.
- This disorder is mainly related to the different lengths of Al-N and B-N bonds and the screw dislocations caused by boron doping.

2. **Changes in Spontaneous Polarization**:
- As the boron content increases from 0 to 6 atomic%, the spontaneous polarization slightly increases; however, when the boron content increases further, the spontaneous polarization begins to decrease.
- This change is attributed to the decline in crystalline order and the increase in in-plane and out-of-plane mosaicity in the thin films.

Through these studies, the paper aims to better understand the specific effects of boron doping on the structure and electrical properties of AlBN thin films, providing a theoretical basis for the further design of thin film materials suitable for integration into complementary metal-oxide-semiconductor (CMOS) technology.