Thermal Characterization of Ferroelectric Al 1- x B x N for Nonvolatile Memory

Kyuhwe Kang,Joseph A. Casamento,Daniel C. Shoemaker,Yiwen Song,Erdem Z. Ozdemir,Nathaniel S. McIlwaine,Jon-Paul Maria,Sukwon Choi,Susan E. Trolier-McKinstry
DOI: https://doi.org/10.1021/acsami.4c14022
IF: 9.5
2024-11-29
ACS Applied Materials & Interfaces
Abstract:Boron (B)-substituted wurtzite AlN (Al(1-x)B(x)N) is a recently discovered wurtzite ferroelectric material that offers several advantages over ferroelectric Hf(1-x)Zr(x)O(2) and PbZr(1-x)Ti(x)O(3). Such benefits include a relatively low growth temperature as well as a thermally stable, and thickness-stable ferroelectric polarization; these factors are promising for the development of ferroelectric nonvolatile random-access memory (FeRAM) that are CMOS-compatible, scalable, and reliable for...
materials science, multidisciplinary,nanoscience & nanotechnology
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