Abstract:Reliable polarization retention in a single crystal-like ferroelectric thin film is crucial for the effective implementation of ferroelectric domain wall (DW) memories. This ensures that the saved information can be non-destructively read out by identifying the resistive state of the memory with a voltage signal below the coercive voltage (Vc) of the ferroelectric film. However, stabilizing a small volume of switched polarization for ultra-high-density information storage applications is still challenging due to its back-switching behavior at zero electric field. In this study, we investigated the polarization retention of ferroelectric BiFeO3 (BFO) thin film devices with size-variable Pt electrodes. With the scaling down of the device size, the switched polarizations became more susceptible to depolarization field and ferroelastic stress arising at the artificially created domain boundary. We found that BFO devices featuring a switched polarization area larger than 7 × 106 nm2 demonstrated both long-term polarization retention and a current rectification ratio of 4.5:1 induced by DW manipulation. As the device size decreases, the retention time of the switched polarization reduces gradually, which results in the disappearance of the device current due to the DW being eliminated by the back-switching of the polarization. A plot was created to illustrate the relationship between the current retention time and the switched polarization area on the surface of the BFO thin films. Furthermore, the unsustainable polarization retention facilitates a higher current rectification ratio of 48:1, which is suitable for non-destructive information readout with a voltage pulse larger than Vc in high-density ferroelectric DW memories.

Oxygen vacancy-mediated enhancement of ferroelectric domain wall memory performance at elevated temperatures

High temperature ferroelectric domain wall memory

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Size-dependent polarization retention in ferroelectric BiFeO3 domain wall memories

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Large domain-wall current in BiFeO3 epitaxial thin films

Coupled Current Jumps and Domain Wall Creeps in a Defect‐Engineered Ferroelectric Resistive Memory

Temporary Formation of Highly Conducting Domain Walls for Non-Destructive Read-out of Ferroelectric Domain-Wall Resistance Switching Memories.

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Topologically Protected Ferroelectric Domain Wall Memory with Large Readout Current

Charged Domain Wall Modulation of Resistive Switching with Large ON/OFF Ratios in High Density BiFeO3 Nano-Islands

Phase-field theory study on the modulation mechanism of oxygen vacancy concentration on charged domain wall in ferroelectric thin films

Nonvolatile Ferroelectric Domain Wall Memory Integrated on Silicon

Hybrid Dry and Wet Etching of LiNbO3 Domain-Wall Memory Devices with 90° Etching Angles and Excellent Electrical Properties.

In Situ Observation Of Thermally Activated Domain Memory And Polarization Memory In An Aged K+-Doped (Ba, Sr)Tio3 Single Crystal

Low-voltage Operation of High-Density Ferroelectric Domain Wall Memory

Optoelectronic Ferroelectric Domain‐Wall Memories Made from a Single Van Der Waals Ferroelectric

The Observation of Domain‐Wall Current Transients along with Charge Injection at Elevated Temperatures

Controlled domain wall directions within nanodevices integrated on the surface of LiNbO3 single crystals

Write-once-read-many-times memory device based on Pt/BiFeO3/LaNiO3 heterostructures