Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides
Nan Liu,Yi Cao,Yin-Lian Zhu,Yu-Jia Wang,Yun-Long Tang,Bo Wu,Min-Jie Zou,Yan-Peng Feng,Xiu-Liang Ma
DOI: https://doi.org/10.1021/acsami.1c06649
IF: 9.5
2021-01-01
ACS Applied Materials & Interfaces
Abstract:Common pursuits of developing nanometric logic and neuromorphic applications have motivated intensive research studies into low-dimensional resistive random-access memory (RRAM) materials. However, fabricating resistive switching medium with inherent stability and homogeneity still remains a bottleneck. Herein, we report a self-assembled uniform biphasic system, comprising low-resistance 3 nm-wide (Bi-0.4,La-0.6)FeO3-delta nanosheets coherently embedded in a high-resistance (Bi-0.2,La-0.8)FeO3-delta matrix, which were spinodally decomposed from an overall stoichiometry of the (Bi-0.24,La-0.76)FeO3-delta parent phase, as a promising nanocomposite to be a stable and endurable RRAM medium. The Bi-rich nanosheets accommodating high concentration of oxygen vacancies as corroborated by X-ray photoelectron spectroscopy and electron energy loss spectroscopy function as fast carrier channels, thus enabling an intrinsic electroforming-free character. Surficial electrical state and resistive switching properties are investigated using multimodal scanning probe microscopy techniques and macroscopic I-V measurements, showing high on/off ratio (similar to 10(3)) and good endurance (up to 1.6 x 10(4) cycles). The established spinodal decomposition-driven phase-coexistence BLFO system demonstrates the merits of stability, uniformity, and endurability, which is promising for further application in RRAM devices.