Abstract:Within the family of two-dimensional dielectrics, rhombohedral boron nitride (rBN) is considerably promising owing to having not only the superior properties of hexagonal boron nitride 1,2,3,4 —including low permittivity and dissipation, strong electrical insulation, good chemical stability, high thermal conductivity and atomic flatness without dangling bonds—but also useful optical nonlinearity and interfacial ferroelectricity originating from the broken in-plane and out-of-plane centrosymmetry 5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23 . However, the preparation of large-sized single-crystal rBN layers remains a challenge 24,25,26 , owing to the requisite unprecedented growth controls to coordinate the lattice orientation of each layer and the sliding vector of every interface. Here we report a facile methodology using bevel-edge epitaxy to prepare centimetre-sized single-crystal rBN layers with exact interlayer ABC stacking on a vicinal nickel surface. We realized successful accurate fabrication over a single-crystal nickel substrate with bunched step edges of the terrace facet (100) at the bevel facet (110), which simultaneously guided the consistent boron–nitrogen bond orientation in each BN layer and the rhombohedral stacking of BN layers via nucleation near each bevel facet. The pure rhombohedral phase of the as-grown BN layers was verified, and consequently showed robust, homogeneous and switchable ferroelectricity with a high Curie temperature. Our work provides an effective route for accurate stacking-controlled growth of single-crystal two-dimensional layers and presents a foundation for applicable multifunctional devices based on stacked two-dimensional materials.

Ferroelectric AlBN Films by Molecular Beam Epitaxy

Epitaxial AlBN/β‐Nb2N Ferroelectric/Superconductor Heterostructures

Ferroelectric YAlN grown by molecular beam epitaxy

Ferroelectricity in boron-substituted aluminum nitride thin films

Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy

Molecular dynamics simulations on ferroelectricity of AlN thin films

Preparation And Relevant Properties Of Amorphous Albn Dielectric Films

Examining the ferroelectric characteristics of aluminum nitride‐based thin films

Molecular beam epitaxy and characterization of ferroelectric quaternary alloy Sc0.2Al0.45Ga0.35N

Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal

Successive layer-by-layer deposition of metal (Mo, Ag)/BN/MoS 2 nanolaminate films and the electric properties of BN/MoS 2 heterostructure on different metal substrates

Effect of boron concentration on local structure and spontaneous polarization in AlBN thin films

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel

Epitaxial Growth and Physical Properties of Ternary Nitride Thin Films by Polymer-Assisted Deposition

Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning

Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer

Enhancement of second-order optical nonlinearities and nanoscale periodic domain patterning in ferroelectric boron-substituted aluminum nitride thin films

Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N++GaN

Wafer Level Quasi-Van Der Waals Epitaxy of AlGaN/GaN Heterojunctions on Sp2-Bonded BN Controlled by AlN Nucleation Layer