Abstract:Anti-ambipolar behavior has been observed in multilayer two-dimensional semiconductors and many p–n junctions. However, temperatures in the range of tens of kelvin are usually required, and there are gaps in the understanding of the underlying physics, most notably the roles of the space charge region and van der Waals (vdW) heterojunction. Here, we systematically investigate the unique transport and transfer characteristics of vertically stacked vdW contacted p-WSe2/n-SnS2 and p-WSe2/n-MoS2 junctions. Interestingly, robust anti-ambipolar behavior is observed at low and room temperature for both darkened and illuminated conditions. A peak-to-valley current ratio exceeding 104 and on-state gating field ranging from −0.3 × 106 to 0.57 × 106 V/cm are achieved at room temperature in darkness. Moreover, the rectifying effect and the type of majority charge carrier of the WSe2/SnS2 junction can be tuned by an electric gate. Robust Raman quenching over the whole interface induced by strong charge transfer is also observed. Based on an equivalent circuit model, a Poisson and drift-diffusion simulation, and experiments with local illumination, we highlight the role of the van der Waals heterojunction. We show that the observed unique anti-ambipolar behavior is due to the recombination of electrons and holes at the space charge region rather than carrier diffusion in the turned-off metal-oxide-semiconductor field-effect transistor (MOSFET). A larger vdW barrier and interface recombination at the vdW barrier are key to having a strong on/off ratio especially at room temperature. The p–n vdW heterostructure plays the roles of a complementary MOSFET connecting with a heterojunction diode, not only a ternary logic inverter but also a tunable multiple-gain amplifier in wide-range gating fields. The width of the middle logic plateau can reach 45 V in a WSe2/MoS2 junction.

Anisotropic charge transfer and gate tuning for p-SnS/n-MoS 2 vertical van der Waals diodes

A van der Waals pn heterojunction with organic/inorganic semiconductors

Robust Anti-Ambipolar Behavior and Gate-Tunable Rectifying Effect in van der Waals p–n Junctions

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Gate-controlled reversible rectifying behavior investigated in a two-dimensional MoS 2 diode

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces

Reconfigurable single-gate PdSe2/WS2 diode with high symmetry rectification

Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP2S6 via In- Plane Ionic Migration

Vertically Stacked and Self-Encapsulated van der Waals Heterojunction Diodes Using Two-Dimensional Layered Semiconductors

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction

Tunable Current Regulative Diode Based on Van Der Waals Stacked MoS2/WSe2 Heterojunction–Channel Field‐Effect Transistor

A Gate-Free Monolayer WSe 2 Pn Diode

Gate Tunable Photovoltaic Effect in MoS2 vertical P-N Homostructures

Vertical SnS 2 /si Heterostructure for Tunnel Diodes

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Gate-Tunable Junctions within Monolayer MoS 2 –WS 2 Lateral Heterostructures

High-Performance Heterojunctions Based On 2d Semiconductors

Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

Gate-Tunable Negative Differential Resistance Behaviors in a Hbn-Encapsulated BP-MoS2 Heterojunction

Van der Waals Multi‐Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials