An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces

Zeya Li,Junwei Huang,Ling Zhou,Zian Xu,Feng Qin,Peng Chen,Xiaojun Sun,Gan Liu,Chengqi Sui,Caiyu Qiu,Yangfan Lu,Huiyang Gou,Xiaoxiang Xi,Toshiya Ideue,Peizhe Tang,Yoshihiro Iwasa,Hongtao Yuan

DOI: https://doi.org/10.1038/s41467-023-41295-6

IF: 16.6

2023-09-09

Nature Communications

Abstract:Abstract Van der Waals dielectrics are fundamental materials for condensed matter physics and advanced electronic applications. Most dielectrics host isotropic structures in crystalline or amorphous forms, and only a few studies have considered the role of anisotropic crystal symmetry in dielectrics as a delicate way to tune electronic properties of channel materials. Here, we demonstrate a layered anisotropic dielectric, SiP 2 , with non-symmorphic twofold-rotational C 2 symmetry as a gate medium which can break the original threefold-rotational C 3 symmetry of MoS 2 to achieve unexpected linearly-polarized photoluminescence and anisotropic second harmonic generation at SiP 2 /MoS 2 interfaces. In contrast to the isotropic behavior of pristine MoS 2 , a large conductance anisotropy with an anisotropy index up to 1000 can be achieved and modulated in SiP 2 -gated MoS 2 transistors. Theoretical calculations reveal that the anisotropic moiré potential at such interfaces is responsible for the giant anisotropic conductance and optical response. Our results provide a strategy for generating exotic functionalities at dielectric/semiconductor interfaces via symmetry engineering.

multidisciplinary sciences