Abstract:The assembly of van der Waals (vdw) heterostructure with easily regulated electronic properties provides a new way for the expansion of two-dimentional (2D) materials and promotes the development of optoelectronics, sensors, switching devices and other fields. In this work, a systematic investigation of the electronic properties of MoGe2N4/SiC heterostructures using density functional theory (DFT) has been conducted, along with the modulation of electronic properties by vertical strain and the potential application prospects in optoelectronic devices. The results show that MoGe2N4/SiC heterostructure has excellent dynamic and thermal stability and belongs to type-II band alignment semiconductors. This is extremely beneficial for the separation of photo-generating electron-hole pairs, so it has important significance for the development of photovoltaic materials. In addition, under the control of vertical strain, the semiconductor-metal transition occurs in the MoGe2N4/SiC heterostructure when the compressive strain reaches 6%. In the case of compressive strain less than 6% and tensile strain, the MoGe2N4/SiC heterostructure maintains the type-II band alignment semiconductor characteristics. Meanwhile, we find that the MoGe2N4/SiC heterostructure has optical absorption coefficients of up to 105 in the visible and ultraviolet light ranges, which can improve the absorption coefficients of the MoGe2N4 and SiC monolayer in some visible light regions. Finally, the optical conductivity of the MoGe2N4/SiC heterostructure exhibits significant anisotropy, with the armchair direction displaying higher conductivity within the orange light range. In conclusion, the formation of vdW heterostructure by vertically stacking MoGe2N4 and SiC monolayers can effectively improve their electronic and optical properties, which provides a valuable reference for the future development of electronic devices and photovoltaic materials.

Low‐Symmetry Van der Waals Dielectric GaInS3 Triggered 2D MoS2 Giant Anisotropy via Symmetry Engineering

A van der Waals pn heterojunction with organic/inorganic semiconductors

Optical anisotropy and polarization selectivity in MoS2/Ta2NiSe5 van der Waals heterostructures

An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces

In-plane anisotropy in van der Waals epitaxial MoS 2 on MoO 2 (010)

Tunable electronic properties and optoelectronic characteristics of MoGe2N4 /SiC van der Waals heterostructure

Multifunctional Lateral Transition‐Metal Disulfides Heterojunctions

Unveiling optical anisotropy in disrupted symmetry WSe2/SiP heterostructures

Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

Artificial Control of In-Plane Anisotropic Photoelectricity in Monolayer MoS2

Mixed‐Dimensional MoS2/Ge Heterostructure Junction Field‐Effect Transistors for Logic Operation and Photodetection

Two-Dimensional Gase/Mose2 Misfit Bilayer Heterojunctions by Van Der Waals Epitaxy

In-Plane Anisotropic Properties Of 1t '-Mos2 Layers

Gate‐Modulated and Polarization‐Sensitive Photodetector Based on the MoS2/PdSe2 Out‐Of‐Plane Van Der Waals Heterostructure

Mo6S3Br6: an Anisotropic 2D Superatomic Semiconductor

MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

Geometric, electronic, and optical properties of MoS 2 /WSSe van der Waals heterojunctions: a first-principles study

Direct observation of ferroelectricity in two-dimensional MoS2

Controllable Photocurrent Generation in Lateral Bilayer MoS2-WS2 Heterostructure

Gate-Tunable Junctions within Monolayer MoS 2 –WS 2 Lateral Heterostructures

Comprehensive Modulation of Conductance Anisotropy in Low-Symmetry Re S 2 Transistors