Abstract:Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS2 single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS2 samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS2, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.

Monomolecular Membrane-Assisted Growth of Antimony Halide Perovskite/MoS 2 Van der Waals Epitaxial Heterojunctions with Long-Lived Interlayer Exciton

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

A van der Waals pn heterojunction with organic/inorganic semiconductors

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

Modulating Epitaxial Atomic Structure of Antimonene Through Interface Design.

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Epitaxial Growth of Two-Dimensional MoO 2 -MoSe 2 Metal-Semiconductor Heterostructures for Schottky Diodes

Room-temperature Epitaxial Welding of 3D and 2D Perovskites

Epitaxial Growth of Two-Dimensional Metal-Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (vse2/mx2) and Their Band Alignments.

Controlled Homoepitaxial Growth of Hybrid Perovskites.

Controlled growth of SnSe/MoS2 vertical p–n heterojunction for optoelectronic applications

Epitaxial Growth of Centimeter-Scale Single-Crystal MoS2 Monolayer on Au(111)

Epitaxial Halide Perovskite Lateral Double Heterostructure

Strong interlayer coupling and long-lived interlayer excitons in two-dimensional perovskite derivatives and transition metal dichalcogenides van der Waals heterostructures

Halide Vapor Phase Epitaxy of Monolayer Molybdenum Diselenide Single Crystals

Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide

Epitaxial Growth of Metal-Semiconductor Van Der Waals Heterostructures NbS2/MoS2 with Enhanced Performance of Transistors and Photodetectors